DE1446211A1 - Verfahren zum Herstellen von Halbleiterkoerpern - Google Patents

Verfahren zum Herstellen von Halbleiterkoerpern

Info

Publication number
DE1446211A1
DE1446211A1 DE19601446211 DE1446211A DE1446211A1 DE 1446211 A1 DE1446211 A1 DE 1446211A1 DE 19601446211 DE19601446211 DE 19601446211 DE 1446211 A DE1446211 A DE 1446211A DE 1446211 A1 DE1446211 A1 DE 1446211A1
Authority
DE
Germany
Prior art keywords
manufacturing semiconductor
semiconductor bodies
der
bath original
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19601446211
Other languages
German (de)
English (en)
Inventor
Courvoisier Jean Clau Frederic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1446211A1 publication Critical patent/DE1446211A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exhaust Gas After Treatment (AREA)
  • Catalysts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19601446211 1959-06-02 1960-05-30 Verfahren zum Herstellen von Halbleiterkoerpern Pending DE1446211A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL239785 1959-06-02

Publications (1)

Publication Number Publication Date
DE1446211A1 true DE1446211A1 (de) 1969-02-06

Family

ID=19751761

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19601446211 Pending DE1446211A1 (de) 1959-06-02 1960-05-30 Verfahren zum Herstellen von Halbleiterkoerpern

Country Status (3)

Country Link
US (1) US3102828A (enrdf_load_stackoverflow)
DE (1) DE1446211A1 (enrdf_load_stackoverflow)
NL (1) NL239785A (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129707C (enrdf_load_stackoverflow) * 1959-06-18
NL277300A (enrdf_load_stackoverflow) * 1961-04-20
US3275906A (en) * 1962-08-20 1966-09-27 Nippon Electric Co Multiple hetero-layer composite semiconductor device
US3271179A (en) * 1962-09-24 1966-09-06 Temescal Metallurgical Corp Method for the manufacture of an optical filter
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen
US3338760A (en) * 1964-06-03 1967-08-29 Massachusetts Inst Technology Method of making a heterojunction semiconductor device
US3428474A (en) * 1964-06-24 1969-02-18 Bausch & Lomb Method for forming ceramic metallic bonds
US3458368A (en) * 1966-05-23 1969-07-29 Texas Instruments Inc Integrated circuits and fabrication thereof
NL6615059A (enrdf_load_stackoverflow) * 1966-10-25 1968-04-26
US3766447A (en) * 1971-10-20 1973-10-16 Harris Intertype Corp Heteroepitaxial structure
DE2607911A1 (de) * 1976-02-26 1977-09-01 Siemens Ag Verfahren zur reinigung eines germaniumkoerpers
US4357183A (en) * 1980-08-13 1982-11-02 Massachusetts Institute Of Technology Heteroepitaxy of germanium silicon on silicon utilizing alloying control
US4861393A (en) * 1983-10-28 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy
ES2154653T3 (es) * 1994-05-06 2001-04-16 Nestle Sa Sistema de dosificacion de producto en polvo.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB742238A (en) * 1951-10-24 1955-12-21 Ass Elect Ind Improvements in barrier layer cells
NL168491B (enrdf_load_stackoverflow) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
DE966848C (de) * 1952-07-29 1957-08-29 Licentia Gmbh Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps
NL98697C (enrdf_load_stackoverflow) * 1952-08-20
DE1240188B (de) * 1954-10-29 1967-05-11 Telefunken Patent Verfahren zum Herstellen von Halbleiterbauelementen mit einem oder mehreren einlegierten p-n-UEbergaengen
GB805493A (en) * 1955-04-07 1958-12-10 Telefunken Gmbh Improved method for the production of semi-conductor devices of npn or pnp type
US2855334A (en) * 1955-08-17 1958-10-07 Sprague Electric Co Method of preparing semiconducting crystals having symmetrical junctions

Also Published As

Publication number Publication date
US3102828A (en) 1963-09-03
NL239785A (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
DE1446211A1 (de) Verfahren zum Herstellen von Halbleiterkoerpern
Tu et al. Morphology and structure of tin lamellae formed by cellular precipitation
DE102020126969A1 (de) Lichtleiste für eine aussenbeleuchtungsbaugruppe
DE2340931A1 (de) Verfahren zur herstellung einer elektrischen vorrichtung mit einem umschliessenden kolben
DE2722628A1 (de) Zusammengesetztes rueckstrahlerelement und herstellungsverfahren hierfuer
DE2226718A1 (de) Vorrichtung zur Befestigung einer Bodenplatte in einem Geschoß, einer Rakete o.dgl
EP0959260A3 (de) Scheibenbremse für ein Landfahrzeug
DE2904546C2 (de) Konische Halterung für ein als Opferlicht an Tischgestellen oder an zylindrischen oder mehreckigen Rohren für kerzenförmige Leuchtkörper einsetzbares Brenngefäß
DK169281A (da) Pigbaand
EP0226985A3 (de) Verfahren und Reagenz zur Bestimmung von Testosteron sowie hierzu geeignete monoklonale Antikörper
DE1414684A1 (de) Optische Bilderzeugungsvorrichtung
DE817387C (de) Verfahren zur Herstellung von Lagermetall in Streifenform
DE343448C (enrdf_load_stackoverflow)
CH647117A5 (de) Verfahren zur herstellung einer abtastnadel und deren befestigung in einem tonabnehmer, insbesondere fuer schallplatten.
DE191927C (enrdf_load_stackoverflow)
Gerard Synchrony in flock wheeling
DE902275C (de) Verfahren zum Herstellen von Sekundaeremissionselektroden mit oxydiertem Silberuntergrund fuer Elektronenvervielfacher
DE2261053C3 (de) Leuchte mit einem oder mehreren Spiegeln
DE167435C (enrdf_load_stackoverflow)
DE1476075A1 (de) Kolben fuer Brennkraftmaschinen,insbesondere Leichtmetallkolben
DE102021111956A1 (de) Verfahren zur Herstellung von vaskularisiertem biologischem Gewebe
EP0078865A2 (de) Vorrichtung zum Erwärmen, insbesondere von Speisen mittels einem festen Brennstoff, insbesondere Trockenspiritus
DE8816345U1 (de) Fahrlampe für Kraftfahrzeuge
DE1037937B (de) Verfahren zur Herstellung von verdichteten Leuchtkoerpern
AT206062B (de) Elektrische Kraftfahrzeuglampe