DE1444495B2 - Verfahren und Vorrichtung zur Rekristallisation eines polykristallinen Materials - Google Patents

Verfahren und Vorrichtung zur Rekristallisation eines polykristallinen Materials

Info

Publication number
DE1444495B2
DE1444495B2 DE19631444495 DE1444495A DE1444495B2 DE 1444495 B2 DE1444495 B2 DE 1444495B2 DE 19631444495 DE19631444495 DE 19631444495 DE 1444495 A DE1444495 A DE 1444495A DE 1444495 B2 DE1444495 B2 DE 1444495B2
Authority
DE
Germany
Prior art keywords
rod
temperature
single crystal
additive
critical temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19631444495
Other languages
German (de)
English (en)
Other versions
DE1444495A1 (de
DE1444495C (enExample
Inventor
Max Paris; Guillaud Charles Louis Bellevue; Paulus (Frankreich)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique
Original Assignee
Centre National de la Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique filed Critical Centre National de la Recherche Scientifique
Publication of DE1444495A1 publication Critical patent/DE1444495A1/de
Publication of DE1444495B2 publication Critical patent/DE1444495B2/de
Application granted granted Critical
Publication of DE1444495C publication Critical patent/DE1444495C/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0311—Compounds
    • H01F1/0313—Oxidic compounds
    • H01F1/0315—Ferrites
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
DE19631444495 1962-03-29 1963-03-26 Verfahren und Vorrichtung zur Rekristallisation eines polykristallinen Materials Granted DE1444495B2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR892623A FR1328946A (fr) 1962-03-29 1962-03-29 Perfectionnements apportés aux procédés de fabrication des monocristaux
FR892623 1962-03-29
DEC0029476 1963-03-26

Publications (3)

Publication Number Publication Date
DE1444495A1 DE1444495A1 (de) 1968-11-07
DE1444495B2 true DE1444495B2 (de) 1972-11-16
DE1444495C DE1444495C (enExample) 1973-06-20

Family

ID=8775585

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19631444495 Granted DE1444495B2 (de) 1962-03-29 1963-03-26 Verfahren und Vorrichtung zur Rekristallisation eines polykristallinen Materials

Country Status (7)

Country Link
US (1) US3414372A (enExample)
BE (1) BE630303A (enExample)
CH (1) CH454096A (enExample)
DE (1) DE1444495B2 (enExample)
FR (1) FR1328946A (enExample)
GB (1) GB969448A (enExample)
NL (1) NL290591A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820890B2 (ja) * 1974-03-01 1983-04-26 サカイカガクコウギヨウ カブシキガイシヤ フエライト粒子の製造法
JPS52106500A (en) * 1976-03-03 1977-09-07 Fujitsu Ltd Magnetic recording medium
JPS5329703A (en) * 1976-09-01 1978-03-20 Fujitsu Ltd Production of thin magnetic film
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
JPS56155100A (en) * 1980-05-02 1981-12-01 Ngk Insulators Ltd Production of single crystal of ferrite
JPS5792591A (en) * 1980-11-28 1982-06-09 Ngk Insulators Ltd Production of single crystal
EP0211187A3 (en) * 1985-06-28 1989-01-11 Kabushiki Kaisha Toshiba Process for producing single crystal of garnet ferrite

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2721950A (en) * 1952-08-09 1955-10-25 Gen Electric Electroluminescent cell
US2848310A (en) * 1954-12-14 1958-08-19 Bell Telephone Labor Inc Method of making single crystal ferrites
US2941861A (en) * 1955-03-31 1960-06-21 Gen Electric Method of making garnet
US3027281A (en) * 1958-05-16 1962-03-27 Westinghouse Electric Corp Single crystals of brittle materials
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
US3075831A (en) * 1960-05-24 1963-01-29 Bell Telephone Labor Inc Growth of single crystals of corundum and gallium oxide
US3234135A (en) * 1962-05-04 1966-02-08 Bell Telephone Labor Inc Growth of beryl crystals

Also Published As

Publication number Publication date
US3414372A (en) 1968-12-03
BE630303A (enExample) 1900-01-01
CH454096A (de) 1968-04-15
NL290591A (enExample) 1900-01-01
GB969448A (en) 1964-09-09
DE1444495A1 (de) 1968-11-07
FR1328946A (fr) 1963-06-07

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977