DE69506998T2 - Korngrenzenloser Kristalliner Manganbasi-Oxidkörper und Verfahren zu seiner Herstellung - Google Patents

Korngrenzenloser Kristalliner Manganbasi-Oxidkörper und Verfahren zu seiner Herstellung

Info

Publication number
DE69506998T2
DE69506998T2 DE1995606998 DE69506998T DE69506998T2 DE 69506998 T2 DE69506998 T2 DE 69506998T2 DE 1995606998 DE1995606998 DE 1995606998 DE 69506998 T DE69506998 T DE 69506998T DE 69506998 T2 DE69506998 T2 DE 69506998T2
Authority
DE
Germany
Prior art keywords
limitless
production
based oxide
oxide body
crystalline manganese
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1995606998
Other languages
English (en)
Other versions
DE69506998D1 (de
Inventor
Atsushi Asamitsu
Yutaka Moritomo
Yoshinori Tokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Angstrom Technology Partnership
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Angstrom Technology Partnership filed Critical Agency of Industrial Science and Technology
Application granted granted Critical
Publication of DE69506998D1 publication Critical patent/DE69506998D1/de
Publication of DE69506998T2 publication Critical patent/DE69506998T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Memories (AREA)
DE1995606998 1994-11-04 1995-11-03 Korngrenzenloser Kristalliner Manganbasi-Oxidkörper und Verfahren zu seiner Herstellung Expired - Fee Related DE69506998T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6271567A JP2674683B2 (ja) 1994-11-04 1994-11-04 メモリースイッチング型磁気抵抗素子

Publications (2)

Publication Number Publication Date
DE69506998D1 DE69506998D1 (de) 1999-02-11
DE69506998T2 true DE69506998T2 (de) 1999-05-27

Family

ID=17501886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995606998 Expired - Fee Related DE69506998T2 (de) 1994-11-04 1995-11-03 Korngrenzenloser Kristalliner Manganbasi-Oxidkörper und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
EP (1) EP0710735B1 (de)
JP (1) JP2674683B2 (de)
KR (1) KR100217257B1 (de)
DE (1) DE69506998T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3221412B2 (ja) * 1997-11-25 2001-10-22 日本電気株式会社 熱制御方法及びその装置
JP4536210B2 (ja) * 2000-05-23 2010-09-01 独立行政法人科学技術振興機構 無粒界型磁気抵抗効果素材の製造方法
WO2003081680A1 (fr) * 2002-03-26 2003-10-02 Japan Science And Technology Agency Dispositif a magnetoresistance tunnel, dispositif de jonction de semiconducteurs et dispositif electroluminescent a semiconducteur
KR101214174B1 (ko) 2011-06-13 2012-12-21 삼전순약공업(주) 졸겔법을 이용한 금속 산화물의 제조방법
CN117142858B (zh) * 2023-10-31 2024-03-08 矿冶科技集团有限公司 具有高强致密相变特性的智能热控涂层材料及其制备方法

Also Published As

Publication number Publication date
JPH08133895A (ja) 1996-05-28
KR100217257B1 (ko) 1999-09-01
EP0710735A1 (de) 1996-05-08
JP2674683B2 (ja) 1997-11-12
DE69506998D1 (de) 1999-02-11
KR960017890A (ko) 1996-06-17
EP0710735B1 (de) 1998-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE

8339 Ceased/non-payment of the annual fee