DE1298565B - Zerstoerungsfrei auslesbare Speicherschaltung - Google Patents

Zerstoerungsfrei auslesbare Speicherschaltung

Info

Publication number
DE1298565B
DE1298565B DEK64481A DEK0064481A DE1298565B DE 1298565 B DE1298565 B DE 1298565B DE K64481 A DEK64481 A DE K64481A DE K0064481 A DEK0064481 A DE K0064481A DE 1298565 B DE1298565 B DE 1298565B
Authority
DE
Germany
Prior art keywords
diode
interrogation
terminals
information
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEK64481A
Other languages
German (de)
English (en)
Inventor
Sugiyama Takeji
Komamiya Yasuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOGYOGIJUTSUINCHO
Original Assignee
KOGYOGIJUTSUINCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOGYOGIJUTSUINCHO filed Critical KOGYOGIJUTSUINCHO
Publication of DE1298565B publication Critical patent/DE1298565B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/58Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561Multilevel memory cell aspects
    • G11C2211/5614Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Devices For Supply Of Signal Current (AREA)
  • Static Random-Access Memory (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
DEK64481A 1960-01-28 1961-01-27 Zerstoerungsfrei auslesbare Speicherschaltung Pending DE1298565B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP230360 1960-01-28
JP696960 1960-03-07
JP3754360 1960-09-13

Publications (1)

Publication Number Publication Date
DE1298565B true DE1298565B (de) 1969-07-03

Family

ID=27275293

Family Applications (3)

Application Number Title Priority Date Filing Date
DEK64481A Pending DE1298565B (de) 1960-01-28 1961-01-27 Zerstoerungsfrei auslesbare Speicherschaltung
DEK64480A Pending DE1298564B (de) 1960-01-28 1961-01-27 Zerstoerungsfrei auslesbare Speicherschaltung
DEK42757A Pending DE1264506B (de) 1960-01-28 1961-01-27 Zerstoerungsfrei auslesbare Speicherschaltung

Family Applications After (2)

Application Number Title Priority Date Filing Date
DEK64480A Pending DE1298564B (de) 1960-01-28 1961-01-27 Zerstoerungsfrei auslesbare Speicherschaltung
DEK42757A Pending DE1264506B (de) 1960-01-28 1961-01-27 Zerstoerungsfrei auslesbare Speicherschaltung

Country Status (4)

Country Link
US (1) US3193699A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (3) DE1298565B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB975952A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (2) NL7200758A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2735001A (en) * 1956-02-14 Witters
DE1059508B (de) * 1957-06-21 1959-06-18 Siemens Elektrogeraete Gmbh Elektronischer Informationsspeicher

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL213425A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-01-03
US2986724A (en) * 1959-05-27 1961-05-30 Bell Telephone Labor Inc Negative resistance oscillator
US3017613A (en) * 1959-08-31 1962-01-16 Rca Corp Negative resistance diode memory
US3034106A (en) * 1959-09-25 1962-05-08 Fairchild Camera Instr Co Memory circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2735001A (en) * 1956-02-14 Witters
DE1059508B (de) * 1957-06-21 1959-06-18 Siemens Elektrogeraete Gmbh Elektronischer Informationsspeicher

Also Published As

Publication number Publication date
GB975952A (en) 1964-11-25
NL7200758A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-05-25
DE1298564B (de) 1969-09-18
US3193699A (en) 1965-07-06
NL260598A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE1264506B (de) 1968-03-28

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