DE1277457B - Strahlungsnachweisgeraet - Google Patents

Strahlungsnachweisgeraet

Info

Publication number
DE1277457B
DE1277457B DEN26191A DEN0026191A DE1277457B DE 1277457 B DE1277457 B DE 1277457B DE N26191 A DEN26191 A DE N26191A DE N0026191 A DEN0026191 A DE N0026191A DE 1277457 B DE1277457 B DE 1277457B
Authority
DE
Germany
Prior art keywords
radiation
semiconductor body
charge carriers
electrons
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN26191A
Other languages
German (de)
English (en)
Inventor
Dr Herman Georg Grimmeiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1277457B publication Critical patent/DE1277457B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
DEN26191A 1964-02-12 1965-02-09 Strahlungsnachweisgeraet Pending DE1277457B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6401190A NL6401190A (en, 2012) 1964-02-12 1964-02-12

Publications (1)

Publication Number Publication Date
DE1277457B true DE1277457B (de) 1968-09-12

Family

ID=19789262

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN26191A Pending DE1277457B (de) 1964-02-12 1965-02-09 Strahlungsnachweisgeraet

Country Status (6)

Country Link
US (1) US3412252A (en, 2012)
BE (1) BE659707A (en, 2012)
DE (1) DE1277457B (en, 2012)
ES (1) ES309187A1 (en, 2012)
GB (1) GB1093622A (en, 2012)
NL (1) NL6401190A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626188A (en) * 1968-11-04 1971-12-07 George E Chilton Light detector employing noise quenching of avalanche diodes
US3548193A (en) * 1969-01-28 1970-12-15 Hughes Aircraft Co Structure to convert infrared radiation images to visible radiation images using a photoconductive element having a plurality of isolated junctions therein
JPS61239678A (ja) * 1985-04-16 1986-10-24 Mitsubishi Electric Corp 光電変換装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863535C (de) * 1940-08-25 1953-01-19 Patra Patent Treuhand Verfahren zur Beeinflussung des photoelektrischen Widerstandes von Halbleiter-Leuchtstoffen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2582850A (en) * 1949-03-03 1952-01-15 Rca Corp Photocell
US2995660A (en) * 1956-09-28 1961-08-08 Sylvania Electric Prod Detector
US3043958A (en) * 1959-09-14 1962-07-10 Philips Corp Circuit element
DE1264513C2 (de) * 1963-11-29 1973-01-25 Texas Instruments Inc Bezugspotentialfreier gleichstromdifferenzverstaerker

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863535C (de) * 1940-08-25 1953-01-19 Patra Patent Treuhand Verfahren zur Beeinflussung des photoelektrischen Widerstandes von Halbleiter-Leuchtstoffen

Also Published As

Publication number Publication date
ES309187A1 (es) 1965-05-16
BE659707A (en, 2012) 1965-08-12
US3412252A (en) 1968-11-19
NL6401190A (en, 2012) 1965-08-13
GB1093622A (en) 1967-12-06

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