DE1276824B - Verfahren zum Herstellen eines ohmschen Kontaktes an einem Halbleiterkoerper - Google Patents

Verfahren zum Herstellen eines ohmschen Kontaktes an einem Halbleiterkoerper

Info

Publication number
DE1276824B
DE1276824B DEST21634A DEST021634A DE1276824B DE 1276824 B DE1276824 B DE 1276824B DE ST21634 A DEST21634 A DE ST21634A DE ST021634 A DEST021634 A DE ST021634A DE 1276824 B DE1276824 B DE 1276824B
Authority
DE
Germany
Prior art keywords
semiconductor body
metal layer
metals
ohmic contact
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEST21634A
Other languages
German (de)
English (en)
Inventor
Cyril Francis Drake
Henley Frank Sterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1276824B publication Critical patent/DE1276824B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DEST21634A 1963-02-08 1964-02-01 Verfahren zum Herstellen eines ohmschen Kontaktes an einem Halbleiterkoerper Pending DE1276824B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB523163A GB1029982A (en) 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
DE1276824B true DE1276824B (de) 1968-09-05

Family

ID=9792180

Family Applications (1)

Application Number Title Priority Date Filing Date
DEST21634A Pending DE1276824B (de) 1963-02-08 1964-02-01 Verfahren zum Herstellen eines ohmschen Kontaktes an einem Halbleiterkoerper

Country Status (4)

Country Link
BE (1) BE643484A (ru)
DE (1) DE1276824B (ru)
GB (1) GB1029982A (ru)
NL (1) NL302321A (ru)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE865160C (de) * 1951-03-07 1953-01-29 Western Electric Co Verfahren zur Erzeugung einer Germaniumschicht auf einem Germaniumkoerper
DE966906C (de) * 1953-04-09 1957-09-19 Siemens Ag Verfahren zur sperrfreien Kontaktierung von Flaechengleichrichtern oder -transistoren mit einem eine p-n-Schichtung aufweisenden Halbleitereinkristall
DE1018557B (de) * 1954-08-26 1957-10-31 Philips Nv Verfahren zur Herstellung von gleichrichtenden Legierungskontakten auf einem Halbleiterkoerper
DE1109002B (de) * 1955-06-22 1961-06-15 Union Carbide Corp Verfahren zum Vernickeln oder Verchromen von Aluminiumgegenstaenden durch Gasplattieren
AT222702B (de) * 1960-06-13 1962-08-10 Siemens Ag Verfahren zur Herstellen einer Halbleiteranordnung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE865160C (de) * 1951-03-07 1953-01-29 Western Electric Co Verfahren zur Erzeugung einer Germaniumschicht auf einem Germaniumkoerper
DE966906C (de) * 1953-04-09 1957-09-19 Siemens Ag Verfahren zur sperrfreien Kontaktierung von Flaechengleichrichtern oder -transistoren mit einem eine p-n-Schichtung aufweisenden Halbleitereinkristall
DE1018557B (de) * 1954-08-26 1957-10-31 Philips Nv Verfahren zur Herstellung von gleichrichtenden Legierungskontakten auf einem Halbleiterkoerper
DE1109002B (de) * 1955-06-22 1961-06-15 Union Carbide Corp Verfahren zum Vernickeln oder Verchromen von Aluminiumgegenstaenden durch Gasplattieren
AT222702B (de) * 1960-06-13 1962-08-10 Siemens Ag Verfahren zur Herstellen einer Halbleiteranordnung

Also Published As

Publication number Publication date
GB1029982A (en) 1966-05-18
BE643484A (ru) 1964-08-07
NL302321A (ru)

Similar Documents

Publication Publication Date Title
DE965988C (de) Verfahren zum Aufbringen einer vakuumdichten, loetfaehigen Metallschicht auf Keramikkoerpern
DE2213115C3 (de) Verfahren zum hochfesten Verbinden von Keramiken aus Karbiden, einschließlich des Diamanten, Boriden, Nitriden oder Suiziden mit Metall nach dem Trocken-Lötverfahren
DE1200439B (de) Verfahren zum Herstellen eines elektrischen Kontaktes an einem oxydueberzogenen Halbleiterplaettchen
DE1234858B (de) Gluehkathode fuer elektrische Entladungsroehren
DE1614148B2 (de) Verfahren zum herstellen einer elektrode fuer halbleiter bauelemente
DE2257078A1 (de) Halbleiterbauelement mit druckkontakt
DE1236660B (de) Halbleiteranordnung mit einem plattenfoermigen, im wesentlichen einkristallinen halbleiterkoerper
DE1276824B (de) Verfahren zum Herstellen eines ohmschen Kontaktes an einem Halbleiterkoerper
DE2218460A1 (de) Kontaktmatenal
DE1236081B (de) Verfahren zur Herstellung von ohmschen Kontakten an Halbleiterbauelementen
DE1188209B (de) Halbleiterbauelement
DE1282195B (de) Halbleiterbauelement mit gesinterter Traeger-Zwischenplatte
DE1248303B (de) Elektrischer, gut loetbarer Zweischichten-Sinterkontaktkoerper mit grosser Schweisssicherheit
DE1187333B (de) Elektrischer Kontakt mit grosser Schweisssicherheit, hoher Abbrandfestigkeit und guter Haftfestigkeit der Kontaktschicht auf dem Kontakttraeger
DE1621258B2 (de) Kontaktstueck aus einem leitenden traeger aus einem unedlen metall und einem dreischichtigen verbundkontaktkoerper sowie dessen herstellungsverfahren
DE1614653C3 (de) Halbleiteranordnung hoher Strombelastbarkeit
DE2403048B2 (de) Elektrische schwachstromkontakte
DE2453918B2 (de) Verfahren zur herstellung eines elektrischen kontaktstuecks
DE2202827B2 (de) Gitterelektrode für elektrische Entladungsgefäß^ und Verfahren zu ihrer Herstellung
DE1141725B (de) Siliziumgleichrichter und Verfahren zu dessen Herstellung
DE1614656C3 (de) Verfahren zum Verlöten der Gitter draYitetiocribelasfbarerKreuzspanngitter fur elektrische Entladungsgefäß
DE2543079A1 (de) Verfahren zum herstellen von festkoerperkondensatoren
AT228340B (de) Siliziumgleichrichter
DE1242759B (de) Sintertragplatte fuer Halbleiterdioden
AT302483B (de) Halbleiterbauelement