DE1261253B - Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement - Google Patents
Elektronisches, bistabiles sperrschichtfreies HalbleiterschaltelementInfo
- Publication number
- DE1261253B DE1261253B DED48617A DED0048617A DE1261253B DE 1261253 B DE1261253 B DE 1261253B DE D48617 A DED48617 A DE D48617A DE D0048617 A DED0048617 A DE D0048617A DE 1261253 B DE1261253 B DE 1261253B
- Authority
- DE
- Germany
- Prior art keywords
- switching element
- antimony
- semiconductor switching
- electronic
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000004888 barrier function Effects 0.000 title claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 14
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- 239000011669 selenium Substances 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052959 stibnite Inorganic materials 0.000 description 2
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 1
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Thermistors And Varistors (AREA)
- Thyristors (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED48617A DE1261253B (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement |
| AT978066A AT265435B (de) | 1965-11-10 | 1966-10-20 | Schicht-Halbmentallwiderstand mit negativer Stromspannungscharakteristik |
| CH1541666A CH443510A (de) | 1965-11-10 | 1966-10-21 | Elektronisches, bistabiles Halbleiterschaltelement |
| GB48189/66A GB1147356A (en) | 1965-11-10 | 1966-10-27 | Improvements in or relating to semi-conductor switching elements |
| NL6615218A NL6615218A (US20110158925A1-20110630-C00042.png) | 1965-11-10 | 1966-10-27 | |
| BE689352D BE689352A (US20110158925A1-20110630-C00042.png) | 1965-11-10 | 1966-11-07 | |
| SE15262/66A SE338107B (US20110158925A1-20110630-C00042.png) | 1965-11-10 | 1966-11-08 | |
| FR83093A FR1498955A (fr) | 1965-11-10 | 1966-11-09 | élément de circuit semi-conducteur bistable électronique |
| DK582266AA DK115858B (da) | 1965-11-10 | 1966-11-10 | Elektronisk, bistabilt halvlederelement. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED48617A DE1261253B (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1261253B true DE1261253B (de) | 1968-02-15 |
Family
ID=7051309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DED48617A Pending DE1261253B (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement |
Country Status (9)
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE622534A (US20110158925A1-20110630-C00042.png) * | 1961-09-19 | |||
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
-
1965
- 1965-11-10 DE DED48617A patent/DE1261253B/de active Pending
-
1966
- 1966-10-20 AT AT978066A patent/AT265435B/de active
- 1966-10-21 CH CH1541666A patent/CH443510A/de unknown
- 1966-10-27 GB GB48189/66A patent/GB1147356A/en not_active Expired
- 1966-10-27 NL NL6615218A patent/NL6615218A/xx unknown
- 1966-11-07 BE BE689352D patent/BE689352A/xx unknown
- 1966-11-08 SE SE15262/66A patent/SE338107B/xx unknown
- 1966-11-09 FR FR83093A patent/FR1498955A/fr not_active Expired
- 1966-11-10 DK DK582266AA patent/DK115858B/da unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
| BE622534A (US20110158925A1-20110630-C00042.png) * | 1961-09-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1147356A (en) | 1969-04-02 |
| AT265435B (de) | 1968-10-10 |
| NL6615218A (US20110158925A1-20110630-C00042.png) | 1967-05-11 |
| FR1498955A (fr) | 1967-10-20 |
| BE689352A (US20110158925A1-20110630-C00042.png) | 1967-04-14 |
| CH443510A (de) | 1967-09-15 |
| SE338107B (US20110158925A1-20110630-C00042.png) | 1971-08-30 |
| DK115858B (da) | 1969-11-17 |
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