DE1252819B - Elektronisches Festkörperbauelement - Google Patents

Elektronisches Festkörperbauelement

Info

Publication number
DE1252819B
DE1252819B DENDAT1252819D DE1252819DA DE1252819B DE 1252819 B DE1252819 B DE 1252819B DE NDAT1252819 D DENDAT1252819 D DE NDAT1252819D DE 1252819D A DE1252819D A DE 1252819DA DE 1252819 B DE1252819 B DE 1252819B
Authority
DE
Germany
Prior art keywords
glass
substance
component according
state
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DENDAT1252819D
Other languages
German (de)
English (en)
Inventor
Mendham N. J. William Rainford Northover Westfield N.J. Arthur David Pearson Bernardsville N.J. Jacob Frederick Dewald (V. St. A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1252819B publication Critical patent/DE1252819B/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
DENDAT1252819D 1961-11-06 Elektronisches Festkörperbauelement Withdrawn DE1252819B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US150374A US3241009A (en) 1961-11-06 1961-11-06 Multiple resistance semiconductor elements

Publications (1)

Publication Number Publication Date
DE1252819B true DE1252819B (de) 1967-10-26

Family

ID=22534236

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1252819D Withdrawn DE1252819B (de) 1961-11-06 Elektronisches Festkörperbauelement

Country Status (6)

Country Link
US (1) US3241009A (OSRAM)
BE (1) BE624465A (OSRAM)
DE (1) DE1252819B (OSRAM)
FR (1) FR1351433A (OSRAM)
GB (1) GB1021510A (OSRAM)
NL (1) NL284820A (OSRAM)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278317A (en) * 1963-03-18 1966-10-11 Bausch & Lomb Vanadium pentoxide-metal metaphosphate glass compositions
US3343972A (en) * 1964-03-02 1967-09-26 Texas Instruments Inc Ge-te-as glasses and method of preparation
DE1234880B (de) * 1964-03-19 1967-02-23 Danfoss As Verfahren zur Herstellung eines elektronischen Festkoerperbauelementes zum Schalten
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device
DE1464880B2 (de) * 1964-05-05 1970-11-12 Danfoss A/S, Nordborg (Dänemark) Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen
NL6507893A (OSRAM) * 1964-06-19 1965-12-20
NL6507894A (OSRAM) * 1964-06-19 1965-12-20
NL6507796A (OSRAM) * 1964-06-19 1965-12-20
DE1231824B (de) * 1964-07-04 1967-01-05 Danfoss As Kontaktanordnung fuer ein elektronisches Festkoerperschaltelement und Verfahren zu seiner Herstellung
US3402131A (en) * 1964-07-28 1968-09-17 Hitachi Ltd Thermistor composition containing vanadium dioxide
US3444438A (en) * 1964-09-18 1969-05-13 Ericsson Telefon Ab L M Threshold semiconductor device
DE1289201B (de) * 1964-11-18 1969-02-13 Danfoss As Elektronisches Festkoerperbauelement zum Schalten
DE1465450B1 (de) * 1964-12-22 1970-07-23 As Danfoss Elektronisches Festk¦rperbauelement zum Schalten
DE1266894B (de) * 1965-03-03 1968-04-25 Danfoss As Sperrschichtfreies Halbleiterschaltelement
US3408212A (en) * 1965-06-04 1968-10-29 Fairchild Camera Instr Co Low melting oxide glass
DE1299778C2 (de) * 1965-06-18 1974-11-14 Danfpes A/S, Nordborg (Danemark) Elektronisches festkoerperbauelement zum schalten
GB1141644A (en) * 1965-11-10 1969-01-29 Standard Telephones Cables Ltd Electrical switching and memory devices
DE1286657C2 (de) * 1965-12-07 1974-11-14 Danfoss A/S, Nordborg (Dänemark) Verfahren zur herstellung eines bistabilen halbleiter-schaltelements und danach hergestelltes halbleiter-schaltelement
DE1278626C2 (de) * 1966-03-19 1976-11-04 Danfoss A/S, Nordborg (Dänemark) Elektrisches schaltelement und verfahren zu seiner herstellung
DE1253837B (de) * 1966-07-13 1967-11-09 Siemens Ag Spannungsgesteuerter Schalter
US3498930A (en) * 1966-12-20 1970-03-03 Telephone & Telegraph Corp Bistable semiconductive glass composition
US3448425A (en) * 1966-12-21 1969-06-03 Itt Solid state element comprising semiconductive glass composition exhibiting negative incremental resistance
LU52765A1 (OSRAM) * 1967-01-06 1968-08-06
IL32745A (en) * 1968-08-22 1973-06-29 Energy Conversion Devices Inc Method and apparatus for producing,storing and retrieving information
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
JPS4911446B1 (OSRAM) * 1970-08-28 1974-03-16
US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors
JPS4940487A (OSRAM) * 1972-08-22 1974-04-16
US3901996A (en) * 1972-10-11 1975-08-26 Nat Inst Res Process for preparing a chalcogenide glass having silicon containing layer and product
US4050082A (en) * 1973-11-13 1977-09-20 Innotech Corporation Glass switching device using an ion impermeable glass active layer
US4244722A (en) * 1977-12-09 1981-01-13 Noboru Tsuya Method for manufacturing thin and flexible ribbon of dielectric material having high dielectric constant
DE2856795C2 (de) * 1977-12-30 1984-12-06 Noboru Prof. Sendai Tsuya Verwendung einer Stahlschmelze für ein Verfahren zum Stranggießen eines dünnen Bandes
US4525223A (en) * 1978-09-19 1985-06-25 Noboru Tsuya Method of manufacturing a thin ribbon wafer of semiconductor material
US4342943A (en) * 1979-10-17 1982-08-03 Owens-Illinois, Inc. P2 O5 -V2 O5 -PbO glass which reduces arcing in funnel portion of CRT
US4492763A (en) * 1982-07-06 1985-01-08 Texas Instruments Incorporated Low dispersion infrared glass
FR2594115B1 (fr) * 1986-02-07 1988-05-06 Centre Nat Rech Scient Nouveaux verres a base d'halogenure de tellure, leur preparation, et leur application notamment dans les domaines de l'optoelectronique et de la transmission infrarouge
JP2539062B2 (ja) * 1989-12-18 1996-10-02 ホーヤ株式会社 半導体微結晶含有多成分ガラス
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
US2641705A (en) * 1946-12-04 1953-06-09 Bell Telephone Labor Inc Stabilized oscillator
US2590893A (en) * 1949-09-20 1952-04-01 Paul H Sanborn Insulator
US2728881A (en) * 1950-03-31 1955-12-27 Gen Electric Asymmetrically conductive devices
US2718616A (en) * 1952-12-31 1955-09-20 Stromberg Carlson Co Semi-conductive device
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2829321A (en) * 1953-07-30 1958-04-01 Sylvania Electric Prod Arsenic tellurium alloys
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US2961350A (en) * 1958-04-28 1960-11-22 Bell Telephone Labor Inc Glass coating of circuit elements
US3058009A (en) * 1959-07-15 1962-10-09 Shockley William Trigger circuit switching from stable operation in the negative resistance region to unstable operation
NL256639A (OSRAM) * 1959-10-08
US3117013A (en) * 1961-11-06 1964-01-07 Bell Telephone Labor Inc Glass composition

Also Published As

Publication number Publication date
US3241009A (en) 1966-03-15
NL284820A (OSRAM)
BE624465A (OSRAM)
GB1021510A (en) 1966-03-02
FR1351433A (fr) 1964-02-07

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee