DE1248167B - Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus Germanium - Google Patents
Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus GermaniumInfo
- Publication number
- DE1248167B DE1248167B DEP25418A DEP0025418A DE1248167B DE 1248167 B DE1248167 B DE 1248167B DE P25418 A DEP25418 A DE P25418A DE P0025418 A DEP0025418 A DE P0025418A DE 1248167 B DE1248167 B DE 1248167B
- Authority
- DE
- Germany
- Prior art keywords
- cadmium
- tin
- gallium
- solder
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 229910052732 germanium Inorganic materials 0.000 title claims description 23
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000005275 alloying Methods 0.000 title claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 58
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 56
- 229910000679 solder Inorganic materials 0.000 claims description 42
- 239000000956 alloy Substances 0.000 claims description 33
- 229910045601 alloy Inorganic materials 0.000 claims description 27
- 229910052733 gallium Inorganic materials 0.000 claims description 25
- 239000000155 melt Substances 0.000 claims description 25
- 229910052738 indium Inorganic materials 0.000 claims description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 230000005496 eutectics Effects 0.000 claims description 12
- 238000005476 soldering Methods 0.000 claims description 10
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910002065 alloy metal Inorganic materials 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000001953 recrystallisation Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910000925 Cd alloy Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 3
- 229910000967 As alloy Inorganic materials 0.000 claims description 2
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 2
- 239000012190 activator Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 3
- WJCRZORJJRCRAW-UHFFFAOYSA-N cadmium gold Chemical compound [Cd].[Au] WJCRZORJJRCRAW-UHFFFAOYSA-N 0.000 claims 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims 2
- 229910052716 thallium Inorganic materials 0.000 claims 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 229910000978 Pb alloy Inorganic materials 0.000 claims 1
- 229910001007 Tl alloy Inorganic materials 0.000 claims 1
- 229910001297 Zn alloy Inorganic materials 0.000 claims 1
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 claims 1
- APAWRDGVSNYWSL-UHFFFAOYSA-N arsenic cadmium Chemical compound [As].[Cd] APAWRDGVSNYWSL-UHFFFAOYSA-N 0.000 claims 1
- ZIXVIWRPMFITIT-UHFFFAOYSA-N cadmium lead Chemical compound [Cd].[Pb] ZIXVIWRPMFITIT-UHFFFAOYSA-N 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- 239000003353 gold alloy Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- -1 tin-cadmium-aluminum Chemical compound 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 235000005074 zinc chloride Nutrition 0.000 claims 1
- 239000011592 zinc chloride Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 23
- 239000011324 bead Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- BPPYUAGTYWFEKJ-UHFFFAOYSA-N [Cd].[Ge] Chemical compound [Cd].[Ge] BPPYUAGTYWFEKJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US829436A US3005735A (en) | 1959-07-24 | 1959-07-24 | Method of fabricating semiconductor devices comprising cadmium-containing contacts |
| US134352A US3186879A (en) | 1959-07-24 | 1961-08-28 | Semiconductor devices utilizing cadmium alloy regions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1248167B true DE1248167B (de) | 1967-08-24 |
Family
ID=26832237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP25418A Pending DE1248167B (de) | 1959-07-24 | 1960-07-25 | Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus Germanium |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3186879A (US07534539-20090519-C00280.png) |
| DE (1) | DE1248167B (US07534539-20090519-C00280.png) |
| GB (1) | GB958795A (US07534539-20090519-C00280.png) |
| NL (1) | NL252974A (US07534539-20090519-C00280.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3463972A (en) * | 1966-06-15 | 1969-08-26 | Fairchild Camera Instr Co | Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state |
| US3584268A (en) * | 1967-03-03 | 1971-06-08 | Xerox Corp | Inverted space charge limited triode |
| DE2132254A1 (de) * | 1970-06-30 | 1972-01-05 | Texas Instruments Inc | Verfahren zum Montieren elektronischer Vorrichtungen |
| US3769563A (en) * | 1972-05-03 | 1973-10-30 | Westinghouse Electric Corp | High speed, high voltage transistor |
| US3771028A (en) * | 1972-05-26 | 1973-11-06 | Westinghouse Electric Corp | High gain, low saturation transistor |
| US3777227A (en) * | 1972-08-21 | 1973-12-04 | Westinghouse Electric Corp | Double diffused high voltage, high current npn transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1005646B (de) * | 1953-10-26 | 1957-04-04 | Western Electric Co | Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen |
| FR1140519A (fr) * | 1954-12-23 | 1957-07-24 | Gen Electric Co Ltd | Fabrication de semi-conducteurs |
| FR1141491A (fr) * | 1954-11-24 | 1957-09-03 | Philips Nv | Système d'électrodes |
| DE1036392B (de) * | 1954-02-27 | 1958-08-14 | Philips Nv | Transistor mit Mehrstoffemitter |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2496692A (en) * | 1947-03-20 | 1950-02-07 | Westinghouse Electric Corp | Selenium rectifier |
| US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
-
0
- NL NL252974D patent/NL252974A/xx unknown
-
1960
- 1960-07-25 DE DEP25418A patent/DE1248167B/de active Pending
- 1960-07-25 GB GB25797/60A patent/GB958795A/en not_active Expired
-
1961
- 1961-08-28 US US134352A patent/US3186879A/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1005646B (de) * | 1953-10-26 | 1957-04-04 | Western Electric Co | Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen |
| DE1036392B (de) * | 1954-02-27 | 1958-08-14 | Philips Nv | Transistor mit Mehrstoffemitter |
| FR1141491A (fr) * | 1954-11-24 | 1957-09-03 | Philips Nv | Système d'électrodes |
| FR1140519A (fr) * | 1954-12-23 | 1957-07-24 | Gen Electric Co Ltd | Fabrication de semi-conducteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| NL252974A (US07534539-20090519-C00280.png) | |
| US3186879A (en) | 1965-06-01 |
| GB958795A (en) | 1964-05-27 |
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