DE1239281B - Verfahren zur Herstellung von mono- oder polykristallinen Silicium-Schichten - Google Patents

Verfahren zur Herstellung von mono- oder polykristallinen Silicium-Schichten

Info

Publication number
DE1239281B
DE1239281B DE1965W0038836 DEW0038836A DE1239281B DE 1239281 B DE1239281 B DE 1239281B DE 1965W0038836 DE1965W0038836 DE 1965W0038836 DE W0038836 A DEW0038836 A DE W0038836A DE 1239281 B DE1239281 B DE 1239281B
Authority
DE
Germany
Prior art keywords
reaction space
production
substrate
reaction
mono
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1965W0038836
Other languages
German (de)
English (en)
Inventor
Dipl-Chem Dr Herbert Jacob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to DE1965W0038836 priority Critical patent/DE1239281B/de
Priority to BE678371D priority patent/BE678371A/xx
Priority to GB1335666A priority patent/GB1146273A/en
Publication of DE1239281B publication Critical patent/DE1239281B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE1965W0038836 1965-03-25 1965-03-25 Verfahren zur Herstellung von mono- oder polykristallinen Silicium-Schichten Pending DE1239281B (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE1965W0038836 DE1239281B (de) 1965-03-25 1965-03-25 Verfahren zur Herstellung von mono- oder polykristallinen Silicium-Schichten
BE678371D BE678371A (enrdf_load_stackoverflow) 1965-03-25 1966-03-24
GB1335666A GB1146273A (en) 1965-03-25 1966-03-25 Method for the preparation of semiconductor monocrystalline or polycrystalline layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965W0038836 DE1239281B (de) 1965-03-25 1965-03-25 Verfahren zur Herstellung von mono- oder polykristallinen Silicium-Schichten

Publications (1)

Publication Number Publication Date
DE1239281B true DE1239281B (de) 1967-04-27

Family

ID=7601910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1965W0038836 Pending DE1239281B (de) 1965-03-25 1965-03-25 Verfahren zur Herstellung von mono- oder polykristallinen Silicium-Schichten

Country Status (3)

Country Link
BE (1) BE678371A (enrdf_load_stackoverflow)
DE (1) DE1239281B (enrdf_load_stackoverflow)
GB (1) GB1146273A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1159407B (de) * 1962-08-29 1963-12-19 Bbc Brown Boveri & Cie Verfahren zum orientierten Kristallabscheiden von Silicium auf einen Siliciumtraeger

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1159407B (de) * 1962-08-29 1963-12-19 Bbc Brown Boveri & Cie Verfahren zum orientierten Kristallabscheiden von Silicium auf einen Siliciumtraeger

Also Published As

Publication number Publication date
BE678371A (enrdf_load_stackoverflow) 1966-09-26
GB1146273A (en) 1969-03-26

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