GB1146273A - Method for the preparation of semiconductor monocrystalline or polycrystalline layers - Google Patents

Method for the preparation of semiconductor monocrystalline or polycrystalline layers

Info

Publication number
GB1146273A
GB1146273A GB1335666A GB1335666A GB1146273A GB 1146273 A GB1146273 A GB 1146273A GB 1335666 A GB1335666 A GB 1335666A GB 1335666 A GB1335666 A GB 1335666A GB 1146273 A GB1146273 A GB 1146273A
Authority
GB
United Kingdom
Prior art keywords
silicon
reaction
zone
gas
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1335666A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB1146273A publication Critical patent/GB1146273A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1,146,273. Semi-conductor crystal layers. WACKER-CHEMIE G.m.b.H. 25 March, 1966 [25 March, 1965], No. 13356/66. Heading C1A. Monocrystalline or polycrystalline silicon layers are deposited on to a heated silicon subtrate, which may, if desired, have been previously polished by etching, by the reduction or thermal decomposition of a halogen and/or hydrogen compound of silicon, which deposition reaction is carried out in a reaction vessel in a zone of substantially static reaction gas, movement of gas into or out of the zone being effected solely by diffusion and/or random turbulences that do not constitute a directional gas stream. In a reaction chamber 1, a rotatable rod 7 mounted in silicon carbide bearing 8 and carrying a disc-shaped substrate carrier of silicon 5, is rotated by means of magnet 12 and socket 11, and held in position by rod 10. Heating is provided by high-frequency coil 14, and as the polished silicon substrates 13 are slowly rotated, reaction gas passes into the top of the vessel 1 at 3 and out at 4, so that a zone of substantially static reaction gas is maintained around the substrates. Alternatively, the chamber may be filled with the appropriate reaction gas, and tubes 3 and 4 sealed whilst the reaction takes place.
GB1335666A 1965-03-25 1966-03-25 Method for the preparation of semiconductor monocrystalline or polycrystalline layers Expired GB1146273A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965W0038836 DE1239281B (en) 1965-03-25 1965-03-25 Process for the production of mono- or polycrystalline silicon layers

Publications (1)

Publication Number Publication Date
GB1146273A true GB1146273A (en) 1969-03-26

Family

ID=7601910

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1335666A Expired GB1146273A (en) 1965-03-25 1966-03-25 Method for the preparation of semiconductor monocrystalline or polycrystalline layers

Country Status (3)

Country Link
BE (1) BE678371A (en)
DE (1) DE1239281B (en)
GB (1) GB1146273A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1159407B (en) * 1962-08-29 1963-12-19 Bbc Brown Boveri & Cie Process for the oriented crystal deposition of silicon on a silicon support

Also Published As

Publication number Publication date
DE1239281B (en) 1967-04-27
BE678371A (en) 1966-09-26

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