DE1228339B - Verfahren zur selektiven Diffusion von Dotierungsmaterial in Halbleiterkoerpern zur Herstellung von pn-UEbergaengen - Google Patents

Verfahren zur selektiven Diffusion von Dotierungsmaterial in Halbleiterkoerpern zur Herstellung von pn-UEbergaengen

Info

Publication number
DE1228339B
DE1228339B DEH50119A DEH0050119A DE1228339B DE 1228339 B DE1228339 B DE 1228339B DE H50119 A DEH50119 A DE H50119A DE H0050119 A DEH0050119 A DE H0050119A DE 1228339 B DE1228339 B DE 1228339B
Authority
DE
Germany
Prior art keywords
doping material
semiconductor body
doping
semiconductor
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEH50119A
Other languages
German (de)
English (en)
Inventor
Hirokazu Kimura
Hiroshi Kodera
Hiroshi Ueda
Masatoshi Migitaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE1228339B publication Critical patent/DE1228339B/de
Pending legal-status Critical Current

Links

Classifications

    • H10P32/141—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/04—Diffusion into selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H10P32/171—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DEH50119A 1962-08-31 1963-08-28 Verfahren zur selektiven Diffusion von Dotierungsmaterial in Halbleiterkoerpern zur Herstellung von pn-UEbergaengen Pending DE1228339B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3713862 1962-08-31

Publications (1)

Publication Number Publication Date
DE1228339B true DE1228339B (de) 1966-11-10

Family

ID=12489243

Family Applications (1)

Application Number Title Priority Date Filing Date
DEH50119A Pending DE1228339B (de) 1962-08-31 1963-08-28 Verfahren zur selektiven Diffusion von Dotierungsmaterial in Halbleiterkoerpern zur Herstellung von pn-UEbergaengen

Country Status (4)

Country Link
US (1) US3290189A (cg-RX-API-DMAC10.html)
DE (1) DE1228339B (cg-RX-API-DMAC10.html)
GB (1) GB1060633A (cg-RX-API-DMAC10.html)
NL (1) NL297288A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1028485A (en) * 1965-02-01 1966-05-04 Standard Telephones Cables Ltd Semiconductor devices
US3870576A (en) * 1970-04-29 1975-03-11 Ilya Leonidovich Isitovsky Method of making a profiled p-n junction in a plate of semiconductive material
US3864174A (en) * 1973-01-22 1975-02-04 Nobuyuki Akiyama Method for manufacturing semiconductor device
US4187126A (en) * 1978-07-28 1980-02-05 Conoco, Inc. Growth-orientation of crystals by raster scanning electron beam

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE892328C (de) * 1951-09-17 1953-10-05 Licentia Gmbh Verfahren zum Legieren von metallischen oder halbleitenden Oberflaechen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
BE524233A (cg-RX-API-DMAC10.html) * 1952-11-14
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US2845371A (en) * 1953-11-27 1958-07-29 Raytheon Mfg Co Process of producing junctions in semiconductors
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
NL241982A (cg-RX-API-DMAC10.html) * 1958-08-13 1900-01-01
US3145126A (en) * 1961-01-10 1964-08-18 Clevite Corp Method of making diffused junctions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE892328C (de) * 1951-09-17 1953-10-05 Licentia Gmbh Verfahren zum Legieren von metallischen oder halbleitenden Oberflaechen

Also Published As

Publication number Publication date
NL297288A (cg-RX-API-DMAC10.html)
US3290189A (en) 1966-12-06
GB1060633A (en) 1967-03-08

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