DE1217502B - Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen - Google Patents
Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum HerstellenInfo
- Publication number
- DE1217502B DE1217502B DER24894A DER0024894A DE1217502B DE 1217502 B DE1217502 B DE 1217502B DE R24894 A DER24894 A DE R24894A DE R0024894 A DER0024894 A DE R0024894A DE 1217502 B DE1217502 B DE 1217502B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- rectifying
- diffusing impurity
- control electrode
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000002344 surface layer Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 phosdene Substances 0.000 description 2
- 239000006187 pill Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- WLNBMPZUVDTASE-HXIISURNSA-N (2r,3r,4s,5r)-2-amino-3,4,5,6-tetrahydroxyhexanal;sulfuric acid Chemical compound [O-]S([O-])(=O)=O.O=C[C@H]([NH3+])[C@@H](O)[C@H](O)[C@H](O)CO.O=C[C@H]([NH3+])[C@@H](O)[C@H](O)[C@H](O)CO WLNBMPZUVDTASE-HXIISURNSA-N 0.000 description 1
- 244000125300 Argania sideroxylon Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001153 fluoro group Chemical class F* 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US722501A US2940022A (en) | 1958-03-19 | 1958-03-19 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1217502B true DE1217502B (de) | 1966-05-26 |
Family
ID=24902112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DER24894A Pending DE1217502B (de) | 1958-03-19 | 1959-02-03 | Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2940022A (xx) |
| DE (1) | DE1217502B (xx) |
| FR (1) | FR1221292A (xx) |
| GB (1) | GB909476A (xx) |
| NL (1) | NL237225A (xx) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3054033A (en) * | 1957-05-21 | 1962-09-11 | Sony Corp | Junction type semiconductor device |
| US3242394A (en) * | 1960-05-02 | 1966-03-22 | Texas Instruments Inc | Voltage variable resistor |
| NL268758A (xx) * | 1960-09-20 | |||
| NL273326A (xx) * | 1961-04-14 | |||
| BE638316A (xx) * | 1962-10-15 | |||
| US3377529A (en) * | 1965-10-04 | 1968-04-09 | Siemens Ag | Semiconductor device with anisotropic inclusions for producing electromag-netic radiation |
| US3484658A (en) * | 1966-08-25 | 1969-12-16 | Nippon Telegraph & Telephone | Temperature compensated semiconductor resistor |
| US8399995B2 (en) * | 2009-01-16 | 2013-03-19 | Infineon Technologies Ag | Semiconductor device including single circuit element for soldering |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH289519A (de) * | 1949-04-27 | 1953-03-15 | Western Electric Co | Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor. |
| US2791758A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Semiconductive translating device |
| DE1013796B (de) * | 1955-02-15 | 1957-08-14 | Stanislas Teszner | Unipolarer Transistor und Verfahren zu seiner Herstellung |
| FR1147153A (fr) * | 1955-03-23 | 1957-11-20 | Western Electric Co | Dispositifs semi-conducteurs |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
| NL216619A (xx) * | 1954-10-18 | |||
| US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices |
-
0
- NL NL237225D patent/NL237225A/xx unknown
-
1958
- 1958-03-19 US US722501A patent/US2940022A/en not_active Expired - Lifetime
-
1959
- 1959-02-03 DE DER24894A patent/DE1217502B/de active Pending
- 1959-02-20 GB GB6017/59A patent/GB909476A/en not_active Expired
- 1959-03-10 FR FR788919A patent/FR1221292A/fr not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH289519A (de) * | 1949-04-27 | 1953-03-15 | Western Electric Co | Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor. |
| DE1013796B (de) * | 1955-02-15 | 1957-08-14 | Stanislas Teszner | Unipolarer Transistor und Verfahren zu seiner Herstellung |
| US2791758A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Semiconductive translating device |
| FR1147153A (fr) * | 1955-03-23 | 1957-11-20 | Western Electric Co | Dispositifs semi-conducteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1221292A (fr) | 1960-06-01 |
| US2940022A (en) | 1960-06-07 |
| GB909476A (en) | 1962-10-31 |
| NL237225A (xx) |
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