DE1217000B - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- DE1217000B DE1217000B DEW34670A DEW0034670A DE1217000B DE 1217000 B DE1217000 B DE 1217000B DE W34670 A DEW34670 A DE W34670A DE W0034670 A DEW0034670 A DE W0034670A DE 1217000 B DE1217000 B DE 1217000B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- photodiode
- tip contact
- junction
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 7
- 239000002800 charge carrier Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 210000000003 hoof Anatomy 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201689A US3170067A (en) | 1962-06-11 | 1962-06-11 | Semiconductor wafer having photosensitive junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1217000B true DE1217000B (de) | 1966-05-18 |
Family
ID=22746881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEW34670A Pending DE1217000B (de) | 1962-06-11 | 1963-06-08 | Photodiode |
Country Status (7)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3296502A (en) * | 1962-11-28 | 1967-01-03 | Gen Instrument Corp | Variable photosensitive semiconductor device having a graduatingly different operable surface area |
| US3283160A (en) * | 1963-11-26 | 1966-11-01 | Ibm | Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region |
| US3267294A (en) * | 1963-11-26 | 1966-08-16 | Ibm | Solid state light emissive diodes having negative resistance characteristics |
| GB1038200A (en) * | 1963-12-24 | 1966-08-10 | Standard Telephones Cables Ltd | Improvements in or relating to solid state display devices |
| US3404279A (en) * | 1965-04-05 | 1968-10-01 | Mc Donnell Douglas Corp | Modulated light detector |
| US3399313A (en) * | 1965-04-07 | 1968-08-27 | Sperry Rand Corp | Photoparametric amplifier diode |
| US3440425A (en) * | 1966-04-27 | 1969-04-22 | Bell Telephone Labor Inc | Gunn-effect devices |
| FR2576456B1 (fr) * | 1985-01-22 | 1987-02-06 | Cgr Mev | Generateur d'onde haute frequence |
| US5341017A (en) * | 1993-06-09 | 1994-08-23 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor switch geometry with electric field shaping |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2691736A (en) * | 1950-12-27 | 1954-10-12 | Bell Telephone Labor Inc | Electrical translation device, including semiconductor |
| GB728244A (en) * | 1951-10-19 | 1955-04-13 | Gen Electric | Improvements in and relating to germanium photocells |
| US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
| US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
| US3089788A (en) * | 1959-05-26 | 1963-05-14 | Ibm | Epitaxial deposition of semiconductor materials |
-
0
- NL NL291956D patent/NL291956A/xx unknown
- BE BE633413D patent/BE633413A/xx unknown
-
1962
- 1962-06-11 US US201689A patent/US3170067A/en not_active Expired - Lifetime
-
1963
- 1963-04-26 FR FR932937A patent/FR1355267A/fr not_active Expired
- 1963-05-30 GB GB21616/63A patent/GB1035167A/en not_active Expired
- 1963-06-06 JP JP2880763A patent/JPS3928678B1/ja active Pending
- 1963-06-08 DE DEW34670A patent/DE1217000B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3170067A (en) | 1965-02-16 |
| GB1035167A (en) | 1966-07-06 |
| NL291956A (US06521211-20030218-C00004.png) | |
| FR1355267A (fr) | 1964-03-13 |
| JPS3928678B1 (US06521211-20030218-C00004.png) | 1964-12-11 |
| BE633413A (US06521211-20030218-C00004.png) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE966492C (de) | Elektrisch steuerbares Schaltelement aus Halbleitermaterial | |
| DE69204327T2 (de) | Laserdioden-Array. | |
| DE891580C (de) | Lichtelektrische Halbleitereinrichtungen | |
| DE3007809C2 (de) | Halbleiterlichtausstrahlungselement und Verfahren zu seiner Herstellung | |
| DE1197549B (de) | Halbleiterbauelement mit mindestens einem pn-UEbergang und mindestens einer Kontakt-elektrode auf einer Isolierschicht | |
| DE1187326B (de) | Verfahren zur Herstellung einer Silizium-Schaltdiode | |
| DE1264513B (de) | Bezugsspannungsfreie Differentialverstaerkerschaltung | |
| DE2851643A1 (de) | Lichtaktivierte lichtemittierende vorrichtung | |
| DE3011484A1 (de) | Optisch steuerbarer, mit statischer induktion arbeitender thyristor | |
| DE1092131B (de) | Transistor und Verfahren zu dessen Herstellung | |
| DE2608562C2 (US06521211-20030218-C00004.png) | ||
| DE1045548B (de) | Verfahren zur Herstellung eines elektrischen Halbleiterkristallgleichrichters mit negativen Widerstandseigenschaften, insbesondere zur Erzeugung von Schwingungen | |
| DE1024640B (de) | Verfahren zur Herstellung von Kristalloden | |
| DE1959889A1 (de) | Mit Ladungsspeicherung arbeitende Einrichtung | |
| WO1993004503A1 (de) | Verfahren zum herstellen von elektrolumineszenten siliziumstrukturen | |
| DE1954694B2 (de) | Signalspeicherplatte für eine Aufnahmeröhre mit einer Elektronenstrahlquelle und Verfahren zu ihrer Herstellung | |
| DE2511281A1 (de) | Durch licht aktivierbarer, steuerbarer halbleitergleichrichter | |
| DE2310724B2 (de) | Phototransistor | |
| DE1217000B (de) | Photodiode | |
| DE1219120B (de) | Elektrolumineszente PN-Halbleiterdiode | |
| DE2447536C2 (de) | Halbleiterlaser | |
| DE3221497A1 (de) | Stabilisierter halbleiterlaser | |
| DE3222848C2 (US06521211-20030218-C00004.png) | ||
| DE2922250C2 (US06521211-20030218-C00004.png) | ||
| DE1150456B (de) | Esaki-Diode und Verfahren zu ihrer Herstellung |
