FR1355267A - Détecteur optique - Google Patents

Détecteur optique

Info

Publication number
FR1355267A
FR1355267A FR932937A FR932937A FR1355267A FR 1355267 A FR1355267 A FR 1355267A FR 932937 A FR932937 A FR 932937A FR 932937 A FR932937 A FR 932937A FR 1355267 A FR1355267 A FR 1355267A
Authority
FR
France
Prior art keywords
optical detector
detector
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR932937A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1355267A publication Critical patent/FR1355267A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
FR932937A 1962-06-11 1963-04-26 Détecteur optique Expired FR1355267A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201689A US3170067A (en) 1962-06-11 1962-06-11 Semiconductor wafer having photosensitive junction

Publications (1)

Publication Number Publication Date
FR1355267A true FR1355267A (fr) 1964-03-13

Family

ID=22746881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR932937A Expired FR1355267A (fr) 1962-06-11 1963-04-26 Détecteur optique

Country Status (7)

Country Link
US (1) US3170067A (fr)
JP (1) JPS3928678B1 (fr)
BE (1) BE633413A (fr)
DE (1) DE1217000B (fr)
FR (1) FR1355267A (fr)
GB (1) GB1035167A (fr)
NL (1) NL291956A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3267294A (en) * 1963-11-26 1966-08-16 Ibm Solid state light emissive diodes having negative resistance characteristics
US3283160A (en) * 1963-11-26 1966-11-01 Ibm Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region
GB1038200A (en) * 1963-12-24 1966-08-10 Standard Telephones Cables Ltd Improvements in or relating to solid state display devices
US3404279A (en) * 1965-04-05 1968-10-01 Mc Donnell Douglas Corp Modulated light detector
US3399313A (en) * 1965-04-07 1968-08-27 Sperry Rand Corp Photoparametric amplifier diode
US3440425A (en) * 1966-04-27 1969-04-22 Bell Telephone Labor Inc Gunn-effect devices
FR2576456B1 (fr) * 1985-01-22 1987-02-06 Cgr Mev Generateur d'onde haute frequence
US5341017A (en) * 1993-06-09 1994-08-23 The United States Of America As Represented By The United States Department Of Energy Semiconductor switch geometry with electric field shaping

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2691736A (en) * 1950-12-27 1954-10-12 Bell Telephone Labor Inc Electrical translation device, including semiconductor
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US3089788A (en) * 1959-05-26 1963-05-14 Ibm Epitaxial deposition of semiconductor materials

Also Published As

Publication number Publication date
DE1217000B (de) 1966-05-18
BE633413A (fr)
GB1035167A (en) 1966-07-06
JPS3928678B1 (fr) 1964-12-11
NL291956A (fr)
US3170067A (en) 1965-02-16

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