DE1212216B - Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen - Google Patents

Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen

Info

Publication number
DE1212216B
DE1212216B DES76788A DES0076788A DE1212216B DE 1212216 B DE1212216 B DE 1212216B DE S76788 A DES76788 A DE S76788A DE S0076788 A DES0076788 A DE S0076788A DE 1212216 B DE1212216 B DE 1212216B
Authority
DE
Germany
Prior art keywords
etching
voltage
transition
etchant
electrolytic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES76788A
Other languages
German (de)
English (en)
Inventor
Dr Guenther Kesel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL284485D priority Critical patent/NL284485A/xx
Priority to NL137553D priority patent/NL137553C/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES76788A priority patent/DE1212216B/de
Priority to CH1180362A priority patent/CH406440A/de
Priority to SE12467/62A priority patent/SE307195B/xx
Priority to FR916155A priority patent/FR1339892A/fr
Priority to GB44155/62A priority patent/GB1017652A/en
Publication of DE1212216B publication Critical patent/DE1212216B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Weting (AREA)
DES76788A 1961-11-22 1961-11-22 Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen Pending DE1212216B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL284485D NL284485A (xx) 1961-11-22
NL137553D NL137553C (xx) 1961-11-22
DES76788A DE1212216B (de) 1961-11-22 1961-11-22 Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen
CH1180362A CH406440A (de) 1961-11-22 1962-10-08 Verfahren zur abschliessenden Formgebung von Übergängen zwischen Gebieten unterschiedlichen Leistungstyps in Halbleitersystemen
SE12467/62A SE307195B (xx) 1961-11-22 1962-11-20
FR916155A FR1339892A (fr) 1961-11-22 1962-11-21 Procédé pour donner leur forme définitive aux systèmes à semi-conducteurs
GB44155/62A GB1017652A (en) 1961-11-22 1962-11-22 Improvements in or relating to semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES76788A DE1212216B (de) 1961-11-22 1961-11-22 Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen

Publications (1)

Publication Number Publication Date
DE1212216B true DE1212216B (de) 1966-03-10

Family

ID=7506366

Family Applications (1)

Application Number Title Priority Date Filing Date
DES76788A Pending DE1212216B (de) 1961-11-22 1961-11-22 Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen

Country Status (6)

Country Link
CH (1) CH406440A (xx)
DE (1) DE1212216B (xx)
FR (1) FR1339892A (xx)
GB (1) GB1017652A (xx)
NL (2) NL137553C (xx)
SE (1) SE307195B (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374405A (en) * 1965-06-22 1968-03-19 Philco Ford Corp Semiconductive device and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1275836A (fr) * 1959-12-11 1961-11-10 Thomson Houston Comp Francaise Dispositifs à semi-conducteur et méthode de fabrication

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1275836A (fr) * 1959-12-11 1961-11-10 Thomson Houston Comp Francaise Dispositifs à semi-conducteur et méthode de fabrication

Also Published As

Publication number Publication date
SE307195B (xx) 1968-12-23
FR1339892A (fr) 1963-10-11
NL284485A (xx)
NL137553C (xx)
GB1017652A (en) 1966-01-19
CH406440A (de) 1966-01-31

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