GB1017652A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB1017652A
GB1017652A GB44155/62A GB4415562A GB1017652A GB 1017652 A GB1017652 A GB 1017652A GB 44155/62 A GB44155/62 A GB 44155/62A GB 4415562 A GB4415562 A GB 4415562A GB 1017652 A GB1017652 A GB 1017652A
Authority
GB
United Kingdom
Prior art keywords
junction
pellet
etched
current
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44155/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1017652A publication Critical patent/GB1017652A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

1,017,652. Semi-conductor devices. SIEMENS & HALSKE A.G. Nov. 22, 1962 [Nov. 22, 1961], No. 44155/62. Heading H1K. In a method of electrolytically etching a PN junction of a semiconductor device, a voltage is applied across the junction and small quantities of electrolyte are applied at intervals to the junction zone. As shown, a tunnel diode is produced from a rectangular germanium body 1 by alloying on an indium pellet 5. The device is electroiytically etched in a bath of weak caustic soda solution using as the cathode an indium plate placed in the bath on the side of the device which carries pellet 5. When the body has been etched to the required shape, the junction is further etched by passing a current between pellet 5 and body 1 and spraying drops of the above electrolyte on to the region of the junction. The device is biased into its negative resistance region for this process using a current of ten to one hundred times the required peak current. The characteristics of the device may be monitored during the process.
GB44155/62A 1961-11-22 1962-11-22 Improvements in or relating to semi-conductor devices Expired GB1017652A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES76788A DE1212216B (en) 1961-11-22 1961-11-22 Method for electrolytic etching of the pn junctions of semiconductor components

Publications (1)

Publication Number Publication Date
GB1017652A true GB1017652A (en) 1966-01-19

Family

ID=7506366

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44155/62A Expired GB1017652A (en) 1961-11-22 1962-11-22 Improvements in or relating to semi-conductor devices

Country Status (6)

Country Link
CH (1) CH406440A (en)
DE (1) DE1212216B (en)
FR (1) FR1339892A (en)
GB (1) GB1017652A (en)
NL (2) NL137553C (en)
SE (1) SE307195B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374405A (en) * 1965-06-22 1968-03-19 Philco Ford Corp Semiconductive device and method of fabricating the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1275836A (en) * 1959-12-11 1961-11-10 Thomson Houston Comp Francaise Semiconductor devices and method of manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374405A (en) * 1965-06-22 1968-03-19 Philco Ford Corp Semiconductive device and method of fabricating the same

Also Published As

Publication number Publication date
NL284485A (en)
CH406440A (en) 1966-01-31
FR1339892A (en) 1963-10-11
NL137553C (en)
SE307195B (en) 1968-12-23
DE1212216B (en) 1966-03-10

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