GB941629A - Tecnetron in semiconductor devices - Google Patents

Tecnetron in semiconductor devices

Info

Publication number
GB941629A
GB941629A GB3246461A GB3246461A GB941629A GB 941629 A GB941629 A GB 941629A GB 3246461 A GB3246461 A GB 3246461A GB 3246461 A GB3246461 A GB 3246461A GB 941629 A GB941629 A GB 941629A
Authority
GB
United Kingdom
Prior art keywords
gate
source
drain
resistance
waisted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3246461A
Original Assignee
Teszner Stanislas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR838680A priority Critical patent/FR1285915A/en
Priority to FR870891A priority patent/FR80234E/en
Application filed by Teszner Stanislas filed Critical Teszner Stanislas
Publication of GB941629A publication Critical patent/GB941629A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8122Vertical transistors

Abstract

941,629. Transistors. S. TESZNER. Sept. 11, 1961 [Sept. 15, 1960; Aug. 12, 1961], No. 32464/61. Heading H1K. A unipolar transistor comprises a generally cylindrical rod with source and drain electrodes and a waisted central section between them. The waisted section includes a first cylindrical or tapered section surrounded by an annular or frusto-conical gate electrode and a second section of reduced diameter adjacent the edge of the gate nearest the source. Such a device, comprising a rod of N-type germanium, may be formed from a conventional unipolar transistor by first electrolytically etching it in dilute soda or potash with the drain and source jointly connected to the positive side of a D.C. source and the grid to the negative side. The section of reduced diameter is then formed in the waisted section by electrolytic etching for a suitable time under intense illumination in a strong solution of boiling hydrogen peroxide using one of the circuits shown in Figs. 7 and 8. A groove is also unavoidably formed on the drain side of the gate but its depth is restricted as a result of the source-drain bias and the use of a large diameter plate electrode 32 to apply the bias to the drain. The ends of the rod are kept short so that the major contribution to the source-gate resistance is made by the resistance of the section of reduced diameter and of the gate barrier layer. With the gate reverse biased the reduced section has a high resistance but when the gate is forward biased the resistance is reduced to a low value by minority carriers injected by the gate. The device is therefore suitable for use in a flip-flop circuit. Specifications 808,734 and 853,421 are referred to.
GB3246461A 1960-09-15 1961-09-11 Tecnetron in semiconductor devices Expired GB941629A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR838680A FR1285915A (en) 1960-09-15 1960-09-15 Improvements to said semiconductor devices tecnetrons negative resistance and to methods for their manufacture
FR870891A FR80234E (en) 1960-09-15 1961-08-12 Improvements to said semiconductor devices tecnetrons negative resistance and to methods for their manufacture

Publications (1)

Publication Number Publication Date
GB941629A true GB941629A (en) 1963-11-13

Family

ID=26187503

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3246461A Expired GB941629A (en) 1960-09-15 1961-09-11 Tecnetron in semiconductor devices

Country Status (6)

Country Link
US (1) US3176203A (en)
CH (1) CH395345A (en)
DE (1) DE1168569C2 (en)
FR (1) FR80234E (en)
GB (1) GB941629A (en)
NL (2) NL269039A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351880A (en) * 1964-05-04 1967-11-07 Endevco Corp Piezoresistive transducer
US3363153A (en) * 1965-06-01 1968-01-09 Gen Telephone & Elect Solid state triode having gate electrode therein subtending a portion of the source electrode
CH461646A (en) * 1967-04-18 1968-08-31 Ibm Field-effect transistor and method for its preparation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066667B (en) *
BE490958A (en) * 1948-09-24
US2939057A (en) * 1957-05-27 1960-05-31 Teszner Stanislas Unipolar field-effect transistors

Also Published As

Publication number Publication date
DE1168569B (en) 1964-04-23
NL130953C (en)
DE1168569C2 (en) 1964-11-05
US3176203A (en) 1965-03-30
NL269039A (en)
FR80234E (en) 1963-03-29
CH395345A (en) 1965-07-15

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