GB825494A - Improvements in or relating to the manufacture of transistors and other semi-conductor devices - Google Patents
Improvements in or relating to the manufacture of transistors and other semi-conductor devicesInfo
- Publication number
- GB825494A GB825494A GB1818057A GB1818057A GB825494A GB 825494 A GB825494 A GB 825494A GB 1818057 A GB1818057 A GB 1818057A GB 1818057 A GB1818057 A GB 1818057A GB 825494 A GB825494 A GB 825494A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- semi
- conductor
- junction
- electrolyte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 7
- 239000003792 electrolyte Substances 0.000 abstract 4
- 238000000866 electrolytic etching Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
825,494. Semi-conductor devices; electrolytic etching. TELEFUNKEN G.m.b.H. June 7, 1957 [July 16, 1956], No. 18180/57. Classes 37 and 41. A thin semi-conductor wafer is prepared by etching the surface of a semi-conductor body to form a depression, forming a PN junction and applying potentials across the PN junction and across the interface between an electrolyte and the depression surface so that the wafer is eroded to a desired thickness at which the direction of the etching current is reversed stopping further etching. In place of the initial etching to form a depression, the body surface may be illuminated during the electrolytic etching process, to promote etching in the central region. Fig. 1 shows an N-type semiconductor body 1 with a central depression in a conductive container 3 with insulating layers 2. A negative voltage (e.g. five volts) is applied to electrode 5 with respect to electrolyte 4, and minus 20 volts are applied to electrode 7 which forms a PN junction with body 1. A space charge layer 6 results from the reverse biasing of the PN junction. The semi-conductor is etched away until the electrolyte reaches the space charge region 6 where etching ceases due to the reversal of polarity. Metal salts may be added to the electrolyte so that a metallic electrode is deposited when this current reversal occurs. The smaller biasing voltage may be temporarily increased, or the PN junction bias temporarily reversed to increase the rate of etching. The semi-conductor may consist of germanium, and the wafer may be used for transistors.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET12456A DE1044289B (en) | 1956-07-16 | 1956-07-16 | Method for producing a thin semiconductor layer, e.g. B. of germanium, by electrolytic deposition of the surface of a semiconductor body, especially for the manufacture of transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB825494A true GB825494A (en) | 1959-12-16 |
Family
ID=7547024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1818057A Expired GB825494A (en) | 1956-07-16 | 1957-06-07 | Improvements in or relating to the manufacture of transistors and other semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1044289B (en) |
| GB (1) | GB825494A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1199407B (en) * | 1959-01-20 | 1965-08-26 | Siemens Ag | Method for removing a semiconductor body with a pn junction of a semiconductor component by etching |
| GB871161A (en) * | 1959-05-13 | 1961-06-21 | Ass Elect Ind | Improvements relating to the production of junction transistors |
| DE1221363B (en) * | 1964-04-25 | 1966-07-21 | Telefunken Patent | Method for reducing the sheet resistance of semiconductor components |
| US3689389A (en) * | 1969-12-16 | 1972-09-05 | Bell Telephone Labor Inc | Electrochemically controlled shaping of semiconductors |
| US4306951A (en) * | 1980-05-30 | 1981-12-22 | International Business Machines Corporation | Electrochemical etching process for semiconductors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE954624C (en) * | 1952-06-19 | 1956-12-20 | Western Electric Co | High frequency semiconductor amplifier |
-
1956
- 1956-07-16 DE DET12456A patent/DE1044289B/en active Pending
-
1957
- 1957-06-07 GB GB1818057A patent/GB825494A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1044289B (en) | 1958-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2603694A (en) | Semiconductor signal translating device | |
| GB1143148A (en) | Air gap isolated semiconductor device | |
| GB993314A (en) | Semiconductive signal translating devices and circuits | |
| GB1157989A (en) | Improvements in and relating to Cleaning Selected Surface Areas of Substrates | |
| US3016313A (en) | Semiconductor devices and methods of making the same | |
| GB814364A (en) | Improvements in and relating to electrolytic etching | |
| GB825494A (en) | Improvements in or relating to the manufacture of transistors and other semi-conductor devices | |
| US3265599A (en) | Formation of grain boundary photoorienter by electrolytic etching | |
| US3023153A (en) | Method of etching semi-conductor bodies | |
| ES337928A1 (en) | Electroetching an aluminum plated semiconductor in a tetraalkylammonium hydroxide electrolyte | |
| GB856430A (en) | Improvements in and relating to semi-conductive devices | |
| GB810946A (en) | Electrolytic shaping of semiconductive bodies | |
| GB686958A (en) | Improvements in or relating to electric crystal rectifiers | |
| GB873484A (en) | Improvements in and relating to the manufacture of semiconductive devices | |
| GB755276A (en) | Improvements in and relating to n-p-n junction devices | |
| US3422528A (en) | Method of producing semiconductor devices | |
| US2923868A (en) | Semiconductor devices | |
| GB835851A (en) | Semiconductive translating devices and methods | |
| GB1391640A (en) | Semi conductor memory device | |
| JPS5730368A (en) | Tunnel fet | |
| GB847930A (en) | Improvements in or relating to the electrolytic etching or plating of semi-conductive bodies | |
| JPS57114281A (en) | Mos type transistor | |
| GB1416650A (en) | Method of depositing electrode leads | |
| JPS5478671A (en) | Semiconductor device | |
| JPS5986268A (en) | Schotkky gate field effect transistor with modulated doping layer as operation layer |