GB847930A - Improvements in or relating to the electrolytic etching or plating of semi-conductive bodies - Google Patents

Improvements in or relating to the electrolytic etching or plating of semi-conductive bodies

Info

Publication number
GB847930A
GB847930A GB33678/56A GB3367856A GB847930A GB 847930 A GB847930 A GB 847930A GB 33678/56 A GB33678/56 A GB 33678/56A GB 3367856 A GB3367856 A GB 3367856A GB 847930 A GB847930 A GB 847930A
Authority
GB
United Kingdom
Prior art keywords
electrolyte
potential
semi
area
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33678/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB847930A publication Critical patent/GB847930A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

847,930. Electrolytic etching and plating of semi-conductors. PHILCO CORPORATION. Nov. 5, 1956 [Nov. 4, 1955], No. 33678/56. Drawings to Specification. Class 41 A body of a semi-conductive material is locally etched or plated electrolytically by applying an electrolyte to the surface of the body to be so treated, and applying a potential between the electrolyte and a potential barrierforming element contiguous with said body and spaced from said surface, the applied potential being such that an area of said surface defined by the area of said element is suffused with minority carriers from said element and that the potential of said surface with respect to the electrolyte is of the same sign as said minority carriers so that etching or plating occurs only in the area suffused by said minority carriers. The treating electrolyte may be applied to the carrier either as a jet or by immersion therein of the body to be treated while isolating from the electrolyte the surfaces of the body other than that to be treated e.g. by means of a wax or polystyrene resist. The potential barrier-forming element may be a P-N junction, a rectifying area contact between an unstressed surface region of the semi-conductive body and an overlying material in intimate engagement therewith (a " surface-barrier contact) or a further electrolyte which may be applied as a jet. Specifications 805,292 and 824,484 are referred to. Reference has been directed by the Comptroller to Specification 805,291.
GB33678/56A 1955-11-04 1956-11-05 Improvements in or relating to the electrolytic etching or plating of semi-conductive bodies Expired GB847930A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US352055XA 1955-11-04 1955-11-04

Publications (1)

Publication Number Publication Date
GB847930A true GB847930A (en) 1960-09-14

Family

ID=21881286

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33678/56A Expired GB847930A (en) 1955-11-04 1956-11-05 Improvements in or relating to the electrolytic etching or plating of semi-conductive bodies

Country Status (5)

Country Link
CH (1) CH352055A (en)
DE (1) DE1051985B (en)
FR (1) FR1159064A (en)
GB (1) GB847930A (en)
NL (2) NL211922A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB871161A (en) * 1959-05-13 1961-06-21 Ass Elect Ind Improvements relating to the production of junction transistors
NL251614A (en) * 1959-05-28 1900-01-01
NL252383A (en) * 1960-06-07
DE1221363B (en) * 1964-04-25 1966-07-21 Telefunken Patent Method for reducing the sheet resistance of semiconductor components

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone

Also Published As

Publication number Publication date
CH352055A (en) 1961-02-15
FR1159064A (en) 1958-06-23
DE1051985B (en) 1959-03-05
NL105577C (en)
NL211922A (en)

Similar Documents

Publication Publication Date Title
GB1535641A (en) Spin coating process and apparatus
GB1226153A (en)
GB1143148A (en) Air gap isolated semiconductor device
GB1316830A (en) Methods of manufacturing semiconductor devices
GB847930A (en) Improvements in or relating to the electrolytic etching or plating of semi-conductive bodies
ES386622A1 (en) Holding device for semiconductor wafers
GB810946A (en) Electrolytic shaping of semiconductive bodies
GB873484A (en) Improvements in and relating to the manufacture of semiconductive devices
JPS5297688A (en) Semiconductor device
GB835851A (en) Semiconductive translating devices and methods
GB1509227A (en) Method for the production of semiconductor devices
JPS5578532A (en) Formation of electrode for semiconductor device
GB901443A (en) Method of treating a portion of the surface of a semiconductive body
GB825494A (en) Improvements in or relating to the manufacture of transistors and other semi-conductor devices
FR2406307A1 (en) Passivated semiconductor devices - esp. mesa diodes, where edges of pn junctions are covered by film of silica
GB958247A (en) Semiconductor devices and methods of fabricating same
JPS5676543A (en) Semiconductor element
GB917739A (en) Gold coating of molybdenum by electroplating
JPS53121489A (en) Semiconductor device
GB819656A (en) Improvements in or relating to crystal diodes
JPS5380165A (en) Manufacture of semiconductor
JPS5325350A (en) Dicing method of semiconductor substrates
JPS53117975A (en) Etching method of semiconductor substrates
JPS5687317A (en) Manufacture of semiconductor device
GB836595A (en) Improvements in electrolytic treatment of semiconductor bodies