GB836595A - Improvements in electrolytic treatment of semiconductor bodies - Google Patents
Improvements in electrolytic treatment of semiconductor bodiesInfo
- Publication number
- GB836595A GB836595A GB19081/56A GB1908156A GB836595A GB 836595 A GB836595 A GB 836595A GB 19081/56 A GB19081/56 A GB 19081/56A GB 1908156 A GB1908156 A GB 1908156A GB 836595 A GB836595 A GB 836595A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrolyte
- etching
- plating
- surface area
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000003792 electrolyte Substances 0.000 abstract 9
- 238000005530 etching Methods 0.000 abstract 6
- 239000013642 negative control Substances 0.000 abstract 6
- 238000007747 plating Methods 0.000 abstract 6
- 238000009713 electroplating Methods 0.000 abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000004347 surface barrier Methods 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 238000003287 bathing Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
836,595. Electrolytic plating and etching of semi - conductors; semi - conductor devices. PHILCO CORPORATION. June 20, 1956 [July 13, 1955], No. 19081/56. Classes 37 and 41. A method of selectively electroplating a local surface area of a semi-conductive body comprises the steps of bathing said surface area with an electroplating electrolyte, forming within said body by means of a negative control voltage a localized region of potential negative with respect to said electrolyte and controllable in its extension towards said surface area in response to increases in said negative control voltage, and varying said voltage to bring about the selective electroplating of the said surface area. In a preferred form the body is first electrolytically etched and then plated by applying to a local surface area of the body an electrolyte which when positive with respect to the body produces plating and when negative thereto produces etching, raising the body to a positive potential and raising a localized region on said body opposite said area to a negative potential so as to create a depletion zone within said body, and varying said negative potential so that selective etching and plating are produced as desired due to the location of the depletion zone which determines which electrolytic action takes place. The negative control voltage may be adjusted so that etching of said surface area occurs until the depletion zone is exposed to the electrolyte whereupon etching is arrested and on increasing the negative control voltage plating occurs in the exposed depletion zone. The negative control voltage may be initially adjusted so that the depletion zone extends up to the said surface area so that when electrolyte is first applied to said area plating occurs. As shown, a wafer 10 of N-type germanium having an ohmic ring contact 11 and a surface barrier rectifying contact 22 which may be formed in the recess by the jet-etching and plating technique of Specification 824,484, is treated with a jet 13 of a plating electrolyte, e.g. an aqueous solution of indium trichloride brought to pH 1.25 with hydrochloric acid, while a voltage is applied between the wafer and the electrolyte through a positive electrode 19 and a negative control voltage is applied to the contact 22. By this means etching occurs until the boundary 26 of the depletion zone 25 is reached whereafter indium is deposited at 35 upon either increasing the negative voltage applied to the contact 22 and/or decreasing the electrolyte-wafer voltage. Instead of using a jet of electrolyte, the wafer may be immersed in an electrolytic bath, the recess, rectifying contact, and lead thereto being insulated as by wax. Reference is also made to the use of silicon as the semi-conductor, non-aqueous ionizing solvents for metal salts to provide the electrolyte, and to the production of surface barrier or alloy junction transistors. Specifications 810,946 and 826,916 also are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US836595XA | 1955-07-13 | 1955-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB836595A true GB836595A (en) | 1960-06-09 |
Family
ID=22179846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB19081/56A Expired GB836595A (en) | 1955-07-13 | 1956-06-20 | Improvements in electrolytic treatment of semiconductor bodies |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB836595A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3275539A (en) * | 1962-11-09 | 1966-09-27 | North American Phillips Compan | Method of manufacturing semiconductor devices |
-
1956
- 1956-06-20 GB GB19081/56A patent/GB836595A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3275539A (en) * | 1962-11-09 | 1966-09-27 | North American Phillips Compan | Method of manufacturing semiconductor devices |
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