DE1212216B - Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen - Google Patents
Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von HalbleiterbauelementenInfo
- Publication number
- DE1212216B DE1212216B DES76788A DES0076788A DE1212216B DE 1212216 B DE1212216 B DE 1212216B DE S76788 A DES76788 A DE S76788A DE S0076788 A DES0076788 A DE S0076788A DE 1212216 B DE1212216 B DE 1212216B
- Authority
- DE
- Germany
- Prior art keywords
- etching
- voltage
- transition
- etchant
- electrolytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000866 electrolytic etching Methods 0.000 title claims description 13
- 238000005530 etching Methods 0.000 claims description 58
- 230000007704 transition Effects 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000000956 alloy Substances 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 21
- 239000006187 pill Substances 0.000 description 21
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 238000009736 wetting Methods 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Electrolytic Production Of Metals (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL284485D NL284485A (he) | 1961-11-22 | ||
NL137553D NL137553C (he) | 1961-11-22 | ||
DES76788A DE1212216B (de) | 1961-11-22 | 1961-11-22 | Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen |
CH1180362A CH406440A (de) | 1961-11-22 | 1962-10-08 | Verfahren zur abschliessenden Formgebung von Übergängen zwischen Gebieten unterschiedlichen Leistungstyps in Halbleitersystemen |
SE12467/62A SE307195B (he) | 1961-11-22 | 1962-11-20 | |
FR916155A FR1339892A (fr) | 1961-11-22 | 1962-11-21 | Procédé pour donner leur forme définitive aux systèmes à semi-conducteurs |
GB44155/62A GB1017652A (en) | 1961-11-22 | 1962-11-22 | Improvements in or relating to semi-conductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES76788A DE1212216B (de) | 1961-11-22 | 1961-11-22 | Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1212216B true DE1212216B (de) | 1966-03-10 |
Family
ID=7506366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES76788A Pending DE1212216B (de) | 1961-11-22 | 1961-11-22 | Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen |
Country Status (6)
Country | Link |
---|---|
CH (1) | CH406440A (he) |
DE (1) | DE1212216B (he) |
FR (1) | FR1339892A (he) |
GB (1) | GB1017652A (he) |
NL (2) | NL137553C (he) |
SE (1) | SE307195B (he) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3374405A (en) * | 1965-06-22 | 1968-03-19 | Philco Ford Corp | Semiconductive device and method of fabricating the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1275836A (fr) * | 1959-12-11 | 1961-11-10 | Thomson Houston Comp Francaise | Dispositifs à semi-conducteur et méthode de fabrication |
-
0
- NL NL284485D patent/NL284485A/xx unknown
- NL NL137553D patent/NL137553C/xx active
-
1961
- 1961-11-22 DE DES76788A patent/DE1212216B/de active Pending
-
1962
- 1962-10-08 CH CH1180362A patent/CH406440A/de unknown
- 1962-11-20 SE SE12467/62A patent/SE307195B/xx unknown
- 1962-11-21 FR FR916155A patent/FR1339892A/fr not_active Expired
- 1962-11-22 GB GB44155/62A patent/GB1017652A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1275836A (fr) * | 1959-12-11 | 1961-11-10 | Thomson Houston Comp Francaise | Dispositifs à semi-conducteur et méthode de fabrication |
Also Published As
Publication number | Publication date |
---|---|
FR1339892A (fr) | 1963-10-11 |
CH406440A (de) | 1966-01-31 |
NL137553C (he) | |
NL284485A (he) | |
GB1017652A (en) | 1966-01-19 |
SE307195B (he) | 1968-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE1021966B (de) | Elektrische Schaltungsanordnung mit negativer Strom-Spannungscharakteristik unter Verwendung einer Halbleiterdiode | |
WO2017097933A1 (de) | Vorrichtung und verfahren zum einseitigen ätzen eines halbleitersubstrats | |
DE1045548B (de) | Verfahren zur Herstellung eines elektrischen Halbleiterkristallgleichrichters mit negativen Widerstandseigenschaften, insbesondere zur Erzeugung von Schwingungen | |
DE2223922C2 (de) | Kontaktvorrichtung für ein Meßinstrument | |
DE1162488B (de) | Halbleiterbauelement mit zwei Elektroden an einer Zone und Verfahren zum Betrieb | |
DE1008428B (de) | Verfahren und Einrichtung zur Funkenerosion mittels Wechselstroms | |
DE2628381B2 (de) | Vorrichtung zum Bohren von Mikrokanälen zwischen zwei einander gegenüberliegenden Flächen eines n-leitenden Halbleiterkörpers | |
DE1274677B (de) | Verfahren zum Modulieren eines elektromagnetischen Strahlungsbuendels und Vorrichtung zu seiner Durchfuehrung | |
DE1213920B (de) | Halbleiterbauelement mit fuenf Zonen abwechselnden Leitfaehigkeitstyps | |
DE1496961C3 (de) | Vorrichtung zur kontinuierlichen anodischen Formgebung von Bandmaterial | |
DE1212216B (de) | Verfahren zum elektrolytischen AEtzen der pn-UEbergaenge von Halbleiterbauelementen | |
DE1212221B (de) | Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper und zwei sperrfreien Basiselektroden | |
DE10234547B4 (de) | Verfahren zur Bildung einer Ausnehmung in der Oberfläche eines Werkstücks, insbesondere zur Herstellung von Mikroformen | |
DE1489055B2 (de) | Feldeffekttransistor | |
DE1589915B2 (de) | Hochspannungsgleichrichter | |
EP0353719A2 (de) | Metallkontakt mit überhängenden Kanten und Herstellungsverfahren | |
DE2321797C3 (de) | Sperrschicht-Feldeffekttransistor | |
DE1132662B (de) | Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone | |
DE1589834A1 (de) | Varaktor mit vergroessertem Kapazitaetsbereich | |
DE2756535A1 (de) | Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor | |
DE1044289B (de) | Verfahren zur Herstellung einer duennen Halbleiterschicht, z. B. aus Germanium, durchelektrolytische Abaetzung der Oberflaeche eines Halbleiterkoerpers, insbesondere fuer die Herstellung von Transistoren | |
DE972909C (de) | Halbleiteranordnung unter Verwendung eines Halbleiterkoerpers, auf dem mindestens zwei gleichrichtende Elektroden und eine weitere Elektrode angebracht sind, und Einrichtung mit einer solchen Halbleiteranordnung | |
DE1168569B (de) | Unipolartransistor mit teilweise negativer Charakteristik und Vorrichtungen zu seinem Herstellen | |
DE2461030C2 (he) | ||
DE1225765C2 (de) | Elektrischer Kondensator mit spannungsabhaengiger Kapazitaet, bestehend aus einem Halbleiterkoerper |