DE1211334B - Halbleiterbauelement mit eingelassenen Zonen - Google Patents

Halbleiterbauelement mit eingelassenen Zonen

Info

Publication number
DE1211334B
DE1211334B DEF39664A DEF0039664A DE1211334B DE 1211334 B DE1211334 B DE 1211334B DE F39664 A DEF39664 A DE F39664A DE F0039664 A DEF0039664 A DE F0039664A DE 1211334 B DE1211334 B DE 1211334B
Authority
DE
Germany
Prior art keywords
zone
semiconductor
electrode
conductivity type
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEF39664A
Other languages
German (de)
English (en)
Inventor
Chih-Tang-Sah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE1211334B publication Critical patent/DE1211334B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
DEF39664A 1962-06-11 1963-05-07 Halbleiterbauelement mit eingelassenen Zonen Pending DE1211334B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201456A US3243669A (en) 1962-06-11 1962-06-11 Surface-potential controlled semiconductor device

Publications (1)

Publication Number Publication Date
DE1211334B true DE1211334B (de) 1966-02-24

Family

ID=22745889

Family Applications (1)

Application Number Title Priority Date Filing Date
DEF39664A Pending DE1211334B (de) 1962-06-11 1963-05-07 Halbleiterbauelement mit eingelassenen Zonen

Country Status (5)

Country Link
US (1) US3243669A (no)
DE (1) DE1211334B (no)
FR (1) FR1362724A (no)
GB (1) GB1033537A (no)
NL (1) NL293292A (no)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803026A1 (de) * 1967-10-13 1971-02-11 Gen Electric Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2904424A1 (de) * 1979-02-06 1980-08-07 Siemens Ag Thyristor mit steuerung durch feldeffekttransistor
DE2915885A1 (de) * 1979-04-19 1980-10-23 Siemens Ag Thyristor mit steuerung durch feldeffekttransistor
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
EP0065173A2 (de) * 1981-05-08 1982-11-24 Siemens Aktiengesellschaft Thyristor mit verbessertem Schaltverhalten
EP0065174A2 (de) * 1981-05-08 1982-11-24 Siemens Aktiengesellschaft Verfahren zum Betrieb eines Thyristors mit steuerbaren Emitterkurzschlüssen
DE3118318A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118347A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb
DE3118291A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Triac und verfahren zu seinem betrieb
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118353A1 (de) * 1979-11-09 1982-12-09 Siemens AG, 1000 Berlin und 8000 München Thyristor mit abschaltbarem emitter-kurzschluss
EP0179230A2 (de) * 1984-09-27 1986-04-30 Siemens Aktiengesellschaft Thyristor mit erhöhter dI/dt-Festigkeit

Families Citing this family (37)

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Publication number Priority date Publication date Assignee Title
NL274830A (no) * 1961-04-12
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US3408543A (en) * 1964-06-01 1968-10-29 Hitachi Ltd Combination capacitor and fieldeffect transistor
BE666834A (no) * 1964-07-13
GB1095412A (no) * 1964-08-26
GB1086128A (en) * 1964-10-23 1967-10-04 Motorola Inc Fabrication of four-layer switch with controlled breakdown voltage
US3484309A (en) * 1964-11-09 1969-12-16 Solitron Devices Semiconductor device with a portion having a varying lateral resistivity
US3372318A (en) * 1965-01-22 1968-03-05 Gen Electric Semiconductor switches
US3456168A (en) * 1965-02-19 1969-07-15 United Aircraft Corp Structure and method for production of narrow doped region semiconductor devices
US3397326A (en) * 1965-03-30 1968-08-13 Westinghouse Electric Corp Bipolar transistor with field effect biasing means
US3667115A (en) * 1965-06-30 1972-06-06 Ibm Fabrication of semiconductor devices with cup-shaped regions
US3346785A (en) * 1965-08-19 1967-10-10 Itt Hidden emitter switching device
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
US3600642A (en) * 1968-11-15 1971-08-17 David F Allison Mos structure with precisely controlled channel length and method
US3597640A (en) * 1969-04-10 1971-08-03 Nat Semiconductor Corp Short circuit protection means for semiconductive circuit apparatus
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
BE756139A (fr) * 1969-09-15 1971-02-15 Rca Corp Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
JPS5135114B1 (no) * 1970-12-28 1976-09-30
US3711940A (en) * 1971-02-08 1973-01-23 Signetics Corp Method for making mos structure with precisely controlled channel length
US3684933A (en) * 1971-06-21 1972-08-15 Itt Semiconductor device showing at least three successive zones of alternate opposite conductivity type
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
US3858234A (en) * 1973-01-08 1974-12-31 Motorola Inc Transistor having improved safe operating area
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE3018499A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
DE3227536A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Darlington-transistorschaltung
DE3201545A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Planare halbleiteranordnung
JPS6174362A (ja) * 1984-09-19 1986-04-16 Hitachi Ltd 半導体装置
EP0180003A3 (de) * 1984-09-28 1988-01-13 Siemens Aktiengesellschaft Bipolarer Leistungstransistor
EP0176771A3 (de) * 1984-09-28 1988-01-13 Siemens Aktiengesellschaft Bipolarer Leistungstransistor mit veränderbarer Durchbruchspannung
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US5736863A (en) * 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
BE489418A (no) * 1948-06-26
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
NL260481A (no) * 1960-02-08
NL265382A (no) * 1960-03-08
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device
NL267831A (no) * 1960-08-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803026A1 (de) * 1967-10-13 1971-02-11 Gen Electric Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2904424A1 (de) * 1979-02-06 1980-08-07 Siemens Ag Thyristor mit steuerung durch feldeffekttransistor
DE2915885A1 (de) * 1979-04-19 1980-10-23 Siemens Ag Thyristor mit steuerung durch feldeffekttransistor
EP0017980B1 (de) * 1979-04-19 1983-10-12 Siemens Aktiengesellschaft Thyristor mit Steuerung durch Feldeffekttransistor
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
DE3118353A1 (de) * 1979-11-09 1982-12-09 Siemens AG, 1000 Berlin und 8000 München Thyristor mit abschaltbarem emitter-kurzschluss
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118347A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb
EP0065671A2 (de) * 1981-05-08 1982-12-01 Siemens Aktiengesellschaft Thyristor mit Hilfsemitterelektrode und Kurzschlussgebieten sowie Verfahren zu seinem Betrieb
DE3118291A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Triac und verfahren zu seinem betrieb
DE3118305A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb
DE3118318A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb
EP0065174A2 (de) * 1981-05-08 1982-11-24 Siemens Aktiengesellschaft Verfahren zum Betrieb eines Thyristors mit steuerbaren Emitterkurzschlüssen
EP0065173A3 (en) * 1981-05-08 1983-09-14 Siemens Aktiengesellschaft Thyristor having particular switching characteristics and process for its operation
EP0065174A3 (en) * 1981-05-08 1983-09-14 Siemens Aktiengesellschaft Thyristor having controllable emitter shortings and shorted regions, and process for its operation
EP0065671A3 (en) * 1981-05-08 1983-09-14 Siemens Aktiengesellschaft Thyristor having an auxiliary emitter electrode and shorted regions, and process for its operation
EP0065173A2 (de) * 1981-05-08 1982-11-24 Siemens Aktiengesellschaft Thyristor mit verbessertem Schaltverhalten
EP0179230A2 (de) * 1984-09-27 1986-04-30 Siemens Aktiengesellschaft Thyristor mit erhöhter dI/dt-Festigkeit
EP0179230A3 (de) * 1984-09-27 1987-11-04 Siemens Aktiengesellschaft Thyristor mit erhöhter dI/dt-Festigkeit

Also Published As

Publication number Publication date
GB1033537A (en) 1966-06-22
US3243669A (en) 1966-03-29
NL293292A (no)
FR1362724A (fr) 1964-06-05

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