DE1209207B - Steuerbarer Halbleitergleichrichter mit einem npnp-Halbleiterkoerper - Google Patents
Steuerbarer Halbleitergleichrichter mit einem npnp-HalbleiterkoerperInfo
- Publication number
- DE1209207B DE1209207B DEA39725A DEA0039725A DE1209207B DE 1209207 B DE1209207 B DE 1209207B DE A39725 A DEA39725 A DE A39725A DE A0039725 A DEA0039725 A DE A0039725A DE 1209207 B DE1209207 B DE 1209207B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- emitter
- emitter zone
- controllable semiconductor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000004020 conductor Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 241000191291 Abies alba Species 0.000 claims 1
- 239000010410 layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000005275 alloying Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Electron Sources, Ion Sources (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9852/61A GB935710A (en) | 1961-03-17 | 1961-03-17 | Improvements in controlled semiconductor rectifiers |
| GB541/64A GB987169A (en) | 1961-03-17 | 1964-01-06 | Improvements relating to semi-conductor controlled rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1209207B true DE1209207B (de) | 1966-01-20 |
Family
ID=26236007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA39725A Pending DE1209207B (de) | 1961-03-17 | 1962-03-16 | Steuerbarer Halbleitergleichrichter mit einem npnp-Halbleiterkoerper |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1209207B (enrdf_load_stackoverflow) |
| FR (1) | FR1317754A (enrdf_load_stackoverflow) |
| GB (2) | GB935710A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2131747A1 (de) * | 1970-06-26 | 1971-12-30 | Gen Electric | Verzahnt aufgebautes Halbleiterbauelement |
| EP0014761B1 (de) * | 1979-01-20 | 1983-10-05 | BROWN, BOVERI & CIE Aktiengesellschaft Mannheim | Kontaktsystem für Leistungs-Thyristor |
| DE3230760A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Abschaltbarer thyristor |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1289195B (de) * | 1964-06-23 | 1969-02-13 | Itt Ind Gmbh Deutsche | Flaechentransistor mit einer eingelassenen Basiszone |
| DE1297239C2 (de) * | 1964-11-11 | 1975-07-17 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Leistungstransistor |
| DE1281036B (de) * | 1965-07-31 | 1968-10-24 | Telefunken Patent | Transistor und Verfahren zu seiner Herstellung |
| US3577046A (en) * | 1969-03-21 | 1971-05-04 | Gen Electric | Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon |
| US3579060A (en) * | 1969-03-21 | 1971-05-18 | Gen Electric | Thyristor with improved current and voltage handling characteristics |
| US3964090A (en) * | 1971-12-24 | 1976-06-15 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. | Semiconductor controlled rectifier |
| US4079409A (en) * | 1973-11-27 | 1978-03-14 | Licentia Patent-Verwaltungs G.M.B.H. | Thyristor with pressure contacting |
| JPS5138879A (enrdf_load_stackoverflow) * | 1974-09-27 | 1976-03-31 | Hitachi Ltd | |
| JPH0214777B2 (enrdf_load_stackoverflow) * | 1979-07-04 | 1990-04-10 | Uesuchinguhausu Bureiku Ando Shigunaru Co Ltd | |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| US4584595A (en) * | 1985-02-07 | 1986-04-22 | Reliance Electric Company | Arrangement of field effect transistors for operation in the switched mode at high frequency |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1243356A (fr) * | 1959-01-30 | 1960-10-07 | Siemens Ag | Dispositif semi-conducteur comportant quatre couches de types de conductibilité alternés |
| US2989426A (en) * | 1957-06-06 | 1961-06-20 | Ibm | Method of transistor manufacture |
-
0
- FR FR1317754D patent/FR1317754A/fr not_active Expired
-
1961
- 1961-03-17 GB GB9852/61A patent/GB935710A/en not_active Expired
-
1962
- 1962-03-16 DE DEA39725A patent/DE1209207B/de active Pending
-
1964
- 1964-01-06 GB GB541/64A patent/GB987169A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2989426A (en) * | 1957-06-06 | 1961-06-20 | Ibm | Method of transistor manufacture |
| FR1243356A (fr) * | 1959-01-30 | 1960-10-07 | Siemens Ag | Dispositif semi-conducteur comportant quatre couches de types de conductibilité alternés |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2131747A1 (de) * | 1970-06-26 | 1971-12-30 | Gen Electric | Verzahnt aufgebautes Halbleiterbauelement |
| EP0014761B1 (de) * | 1979-01-20 | 1983-10-05 | BROWN, BOVERI & CIE Aktiengesellschaft Mannheim | Kontaktsystem für Leistungs-Thyristor |
| DE3230760A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Abschaltbarer thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| GB935710A (en) | 1963-09-04 |
| FR1317754A (enrdf_load_stackoverflow) | 1963-05-08 |
| GB987169A (en) | 1965-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3011557C2 (de) | Zweipoliger Überstromschutz | |
| DE1209207B (de) | Steuerbarer Halbleitergleichrichter mit einem npnp-Halbleiterkoerper | |
| DE1639019C3 (de) | Steuerbarer Halbleitergleichrichter | |
| DE1260029B (de) | Verfahren zum Herstellen von Halbleiterbauelementen auf einem Halbleitereinkristallgrundplaettchen | |
| DE1282196B (de) | Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge | |
| DE2121086B2 (enrdf_load_stackoverflow) | ||
| EP0039943A1 (de) | Thyristor mit steuerbaren Emitterkurzschlüssen und Verfahren zu seinem Betrieb | |
| DE1094370B (de) | Symmetrisch aufgebaute, flaechenhafte Halbleiteranordnung, insbesondere Transistor | |
| DE3329241A1 (de) | Leistungstransistor | |
| DE2549614B2 (de) | Halbleiterschalter | |
| DE2320563A1 (de) | Vierschichttriode | |
| DE1216435B (de) | Schaltbares Halbleiterbauelement mit vier Zonen | |
| DE3337156C2 (enrdf_load_stackoverflow) | ||
| DE69314331T2 (de) | Vertikaler Bipolar-Leistungstransistor mit vergrabener Basis und ineinandergreifender Geometrie | |
| DE69223346T2 (de) | Bidirektionales Schutzelement | |
| DE1194500B (de) | Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen | |
| DE1211339B (de) | Steuerbares Halbleiterbauelement mit vier Zonen | |
| DE2013228A1 (de) | Halbleiterelement mit mindestens einer Steuerelektrode | |
| DE2300754A1 (de) | Thyristor | |
| DE2209518C3 (de) | Zweirichtungsthyristor | |
| DE2026778C3 (de) | Halbleitervierschichtdiode | |
| DE1166939B (de) | Spannungsregelnde Halbleiterdiode | |
| DE2732360A1 (de) | Hochspannungs-thyristor | |
| DE1916874A1 (de) | Halbleiterbauelement mit Steuerung der Rekombination von in einem eigenleitenden Bereich vorhandenen Elektronen und Defektelektronen | |
| DE1208414B (de) | Betriebsschaltung eines Mehrfach-Halbleiterbauelements aus einer Halbleiterscheibe und mehreren Elektroden auf der einen Hauptoberflaeche und Ausbildung des Halbleiterbauelements |