DE1190291B - Vorrichtung zur AEtzung von runden Halbleiterscheiben - Google Patents

Vorrichtung zur AEtzung von runden Halbleiterscheiben

Info

Publication number
DE1190291B
DE1190291B DES71521A DES0071521A DE1190291B DE 1190291 B DE1190291 B DE 1190291B DE S71521 A DES71521 A DE S71521A DE S0071521 A DES0071521 A DE S0071521A DE 1190291 B DE1190291 B DE 1190291B
Authority
DE
Germany
Prior art keywords
semiconductor wafers
etching
etching liquid
shaft
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DES71521A
Other languages
German (de)
English (en)
Other versions
DE1190291C2 (enrdf_load_html_response
Inventor
Dr-Ing Reimer Emeis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES71521A priority Critical patent/DE1190291B/de
Publication of DE1190291B publication Critical patent/DE1190291B/de
Application granted granted Critical
Publication of DE1190291C2 publication Critical patent/DE1190291C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
DES71521A 1960-12-03 1960-12-03 Vorrichtung zur AEtzung von runden Halbleiterscheiben Granted DE1190291B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES71521A DE1190291B (de) 1960-12-03 1960-12-03 Vorrichtung zur AEtzung von runden Halbleiterscheiben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71521A DE1190291B (de) 1960-12-03 1960-12-03 Vorrichtung zur AEtzung von runden Halbleiterscheiben

Publications (2)

Publication Number Publication Date
DE1190291B true DE1190291B (de) 1965-04-01
DE1190291C2 DE1190291C2 (enrdf_load_html_response) 1965-12-02

Family

ID=7502531

Family Applications (1)

Application Number Title Priority Date Filing Date
DES71521A Granted DE1190291B (de) 1960-12-03 1960-12-03 Vorrichtung zur AEtzung von runden Halbleiterscheiben

Country Status (1)

Country Link
DE (1) DE1190291B (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643750A1 (de) * 1975-10-03 1977-04-14 Philips Nv Verfahren zum aetzen von halbleiterscheiben, insbesondere fuer sonnenzellen, und vorrichtung zum durchfuehren dieses verfahrens

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643750A1 (de) * 1975-10-03 1977-04-14 Philips Nv Verfahren zum aetzen von halbleiterscheiben, insbesondere fuer sonnenzellen, und vorrichtung zum durchfuehren dieses verfahrens

Also Published As

Publication number Publication date
DE1190291C2 (enrdf_load_html_response) 1965-12-02

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