DE1179646B - Flaechentransistor und Verfahren zu seiner Herstellung - Google Patents
Flaechentransistor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE1179646B DE1179646B DEW17618A DEW0017618A DE1179646B DE 1179646 B DE1179646 B DE 1179646B DE W17618 A DEW17618 A DE W17618A DE W0017618 A DEW0017618 A DE W0017618A DE 1179646 B DE1179646 B DE 1179646B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor
- conductivity type
- surface layer
- recrystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000009792 diffusion process Methods 0.000 claims description 25
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 239000002344 surface layer Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 239000006187 pill Substances 0.000 claims description 21
- 239000002019 doping agent Substances 0.000 claims description 17
- 238000001953 recrystallisation Methods 0.000 claims description 16
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US465638A US2840497A (en) | 1954-10-29 | 1954-10-29 | Junction transistors and processes for producing them |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1179646B true DE1179646B (de) | 1964-10-15 |
Family
ID=23848571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEW17618A Pending DE1179646B (de) | 1954-10-29 | 1955-10-06 | Flaechentransistor und Verfahren zu seiner Herstellung |
Country Status (7)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
| US2977256A (en) * | 1956-08-16 | 1961-03-28 | Gen Electric | Semiconductor devices and methods of making same |
| US3066051A (en) * | 1957-05-14 | 1962-11-27 | Sprague Electric Co | Preparation of multiple p-n junction semiconductor crystals |
| US3054033A (en) * | 1957-05-21 | 1962-09-11 | Sony Corp | Junction type semiconductor device |
| US3001895A (en) * | 1957-06-06 | 1961-09-26 | Ibm | Semiconductor devices and method of making same |
| US3008089A (en) * | 1958-02-20 | 1961-11-07 | Bell Telephone Labor Inc | Semiconductive device comprising p-i-n conductivity layers |
| US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
| US3109938A (en) * | 1958-03-19 | 1963-11-05 | Rauland Corp | Semi-conductor device having a gas-discharge type switching characteristic |
| NL111773C (US20020095090A1-20020718-M00002.png) * | 1958-08-07 | |||
| US3049451A (en) * | 1959-09-02 | 1962-08-14 | Tung Sol Electric Inc | Multiple zone semiconductor device and method of making the same |
| NL259311A (US20020095090A1-20020718-M00002.png) * | 1959-12-21 | |||
| NL263771A (US20020095090A1-20020718-M00002.png) * | 1960-04-26 | |||
| GB985864A (en) * | 1960-08-05 | 1965-03-10 | Telefunken Patent | A semiconductor device |
| NL257150A (US20020095090A1-20020718-M00002.png) * | 1960-10-22 | 1900-01-01 | ||
| NL278058A (US20020095090A1-20020718-M00002.png) * | 1961-05-26 | |||
| US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
| NL272046A (US20020095090A1-20020718-M00002.png) * | 1961-11-30 | |||
| US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
| US3275906A (en) * | 1962-08-20 | 1966-09-27 | Nippon Electric Co | Multiple hetero-layer composite semiconductor device |
| US3235419A (en) * | 1963-01-15 | 1966-02-15 | Philips Corp | Method of manufacturing semiconductor devices |
| GB1145121A (en) * | 1965-07-30 | 1969-03-12 | Associated Semiconductor Mft | Improvements in and relating to transistors |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE505814A (US20020095090A1-20020718-M00002.png) * | 1950-09-14 | 1900-01-01 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE500302A (US20020095090A1-20020718-M00002.png) * | 1949-11-30 | |||
| GB728244A (en) * | 1951-10-19 | 1955-04-13 | Gen Electric | Improvements in and relating to germanium photocells |
| NL168491B (US20020095090A1-20020718-M00002.png) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
| NL180221B (nl) * | 1952-07-29 | Charbonnages Ste Chimique | Werkwijze ter bereiding van een polyaminoamidehardingsmiddel voor epoxyharsen; werkwijze ter bereiding van een in water verdeeld hardingsmiddel; werkwijze ter bereiding van een epoxyharssamenstelling die een dergelijk hardingsmiddel bevat alsmede voorwerp voorzien van een bekledingslaag verkregen uit een dergelijke epoxyharssamenstelling. | |
| NL87620C (US20020095090A1-20020718-M00002.png) * | 1952-11-14 | |||
| BE525428A (US20020095090A1-20020718-M00002.png) * | 1952-12-30 |
-
0
- BE BE542380D patent/BE542380A/xx unknown
- NL NL103256D patent/NL103256C/xx active
- NL NL200888D patent/NL200888A/xx unknown
-
1954
- 1954-10-29 US US465638A patent/US2840497A/en not_active Expired - Lifetime
-
1955
- 1955-10-04 CH CH338904D patent/CH338904A/de unknown
- 1955-10-06 DE DEW17618A patent/DE1179646B/de active Pending
- 1955-10-21 GB GB30129/55A patent/GB799293A/en not_active Expired
- 1955-10-28 FR FR1143107D patent/FR1143107A/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE505814A (US20020095090A1-20020718-M00002.png) * | 1950-09-14 | 1900-01-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| NL103256C (US20020095090A1-20020718-M00002.png) | |
| FR1143107A (fr) | 1957-09-26 |
| BE542380A (US20020095090A1-20020718-M00002.png) | |
| CH338904A (de) | 1959-06-15 |
| GB799293A (en) | 1958-08-06 |
| NL200888A (US20020095090A1-20020718-M00002.png) | |
| US2840497A (en) | 1958-06-24 |
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