DE1162485B - Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒ mit einemHalbleiterkoerper aus Borphosphid - Google Patents

Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒ mit einemHalbleiterkoerper aus Borphosphid

Info

Publication number
DE1162485B
DE1162485B DENDAT1162485D DE1162485DA DE1162485B DE 1162485 B DE1162485 B DE 1162485B DE NDAT1162485 D DENDAT1162485 D DE NDAT1162485D DE 1162485D A DE1162485D A DE 1162485DA DE 1162485 B DE1162485 B DE 1162485B
Authority
DE
Germany
Prior art keywords
nickel
electrode
plate
semiconductor
boron phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1162485D
Other languages
German (de)
English (en)
Inventor
Dale Eugene Hill
Robert Arthur Ruehrwein
Forrest Vaughan Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Chemicals Ltd
Original Assignee
Monsanto Chemicals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1162485B publication Critical patent/DE1162485B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thermistors And Varistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DENDAT1162485D 1959-10-16 Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒ mit einemHalbleiterkoerper aus Borphosphid Pending DE1162485B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84685159A 1959-10-16 1959-10-16
US846956A US3054936A (en) 1959-10-16 1959-10-16 Transistor
US846850A US3022452A (en) 1959-10-16 1959-10-16 Diode

Publications (1)

Publication Number Publication Date
DE1162485B true DE1162485B (de) 1964-02-06

Family

ID=27420330

Family Applications (2)

Application Number Title Priority Date Filing Date
DENDAT1162486D Pending DE1162486B (de) 1959-10-16 Leistungs-Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒC mit einem Halbleiterkoerper aus kubischem Borphosphid
DENDAT1162485D Pending DE1162485B (de) 1959-10-16 Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒ mit einemHalbleiterkoerper aus Borphosphid

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DENDAT1162486D Pending DE1162486B (de) 1959-10-16 Leistungs-Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒC mit einem Halbleiterkoerper aus kubischem Borphosphid

Country Status (4)

Country Link
US (2) US3054936A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE1162485B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB950849A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (2) NL256931A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3217379A (en) * 1960-12-09 1965-11-16 Texas Instruments Inc Method for forming pn junctions in indium antimonide with special application to infrared detection
US3238424A (en) * 1961-06-14 1966-03-01 Microwave Ass Semiconductor devices and method of fabricating them
US3189799A (en) * 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
US3237061A (en) * 1961-07-26 1966-02-22 Columbia Broadcasting Syst Inc Semiconductor device having exposed semiconductor surface and method of manufacture
US3259815A (en) * 1962-06-28 1966-07-05 Texas Instruments Inc Gallium arsenide body containing copper
DE1300163B (de) * 1967-06-29 1969-07-31 Philips Nv Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Legierungselektrode
US4529996A (en) * 1983-04-14 1985-07-16 Allied Coporation Indium phosphide-boron phosphide heterojunction bipolar transistor
US6936863B2 (en) * 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
JP4658643B2 (ja) * 2004-03-08 2011-03-23 昭和電工株式会社 リン化硼素系半導体素子
KR100813764B1 (ko) 2004-03-29 2008-03-13 쇼와 덴코 가부시키가이샤 화합물 반도체 발광 소자 및 그 제조 방법
TWI258183B (en) * 2004-04-28 2006-07-11 Showa Denko Kk Compound semiconductor light-emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
DE1060055B (de) * 1957-11-15 1959-06-25 Siemens Ag Verfahren zur Herstellung der elektrischen Anschluesse von Halbleiteranordnungen
DE1796305U (de) * 1959-05-16 1959-09-24 Siemens Ag Halbleiteranordnung mit mindestens einer flaechigen elektrode.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
DE1060055B (de) * 1957-11-15 1959-06-25 Siemens Ag Verfahren zur Herstellung der elektrischen Anschluesse von Halbleiteranordnungen
DE1796305U (de) * 1959-05-16 1959-09-24 Siemens Ag Halbleiteranordnung mit mindestens einer flaechigen elektrode.

Also Published As

Publication number Publication date
GB950849A (en) 1964-02-26
DE1162486B (de) 1964-02-06
NL256790A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01
US3054936A (en) 1962-09-18
US3022452A (en) 1962-02-20
NL256931A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01

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