DE1158181B - Diffusionsverfahren zum Dotieren eines Halbleiterkoerpers fuer Halbleiterbauelemente - Google Patents

Diffusionsverfahren zum Dotieren eines Halbleiterkoerpers fuer Halbleiterbauelemente

Info

Publication number
DE1158181B
DE1158181B DES71055A DES0071055A DE1158181B DE 1158181 B DE1158181 B DE 1158181B DE S71055 A DES71055 A DE S71055A DE S0071055 A DES0071055 A DE S0071055A DE 1158181 B DE1158181 B DE 1158181B
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductor body
impurity
doping
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES71055A
Other languages
German (de)
English (en)
Inventor
Yoshiyuki Kawana
Toshio Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE1158181B publication Critical patent/DE1158181B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
DES71055A 1959-10-29 1960-10-28 Diffusionsverfahren zum Dotieren eines Halbleiterkoerpers fuer Halbleiterbauelemente Pending DE1158181B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3415559 1959-10-29

Publications (1)

Publication Number Publication Date
DE1158181B true DE1158181B (de) 1963-11-28

Family

ID=12406298

Family Applications (1)

Application Number Title Priority Date Filing Date
DES71055A Pending DE1158181B (de) 1959-10-29 1960-10-28 Diffusionsverfahren zum Dotieren eines Halbleiterkoerpers fuer Halbleiterbauelemente

Country Status (3)

Country Link
DE (1) DE1158181B (enrdf_load_stackoverflow)
GB (1) GB910857A (enrdf_load_stackoverflow)
NL (1) NL256928A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2802760A (en) * 1955-12-02 1957-08-13 Bell Telephone Labor Inc Oxidation of semiconductive surfaces for controlled diffusion
FR1211756A (fr) * 1958-10-07 1960-03-18 Lignes Telegraph Telephon Procédé de diffusion de bore dans du silicium
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2802760A (en) * 1955-12-02 1957-08-13 Bell Telephone Labor Inc Oxidation of semiconductive surfaces for controlled diffusion
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung
FR1211756A (fr) * 1958-10-07 1960-03-18 Lignes Telegraph Telephon Procédé de diffusion de bore dans du silicium

Also Published As

Publication number Publication date
GB910857A (en) 1962-11-21
NL256928A (enrdf_load_stackoverflow)

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