GB910857A - A method of manufacturing a diffusion type semiconductor device - Google Patents

A method of manufacturing a diffusion type semiconductor device

Info

Publication number
GB910857A
GB910857A GB37000/60A GB3700060A GB910857A GB 910857 A GB910857 A GB 910857A GB 37000/60 A GB37000/60 A GB 37000/60A GB 3700060 A GB3700060 A GB 3700060A GB 910857 A GB910857 A GB 910857A
Authority
GB
United Kingdom
Prior art keywords
impurity
type layer
oxide
oct
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37000/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB910857A publication Critical patent/GB910857A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

910,857. Semi-conductor devices. SONY CORPORATION. Oct. 27, 1960 [Oct. 29, 1959], No. 37000/60. Drawings to Specification. Class 37. A semi-conductor device is made by depositing a first impurity on the surface of a semiconductor body, heating in an oxidizing atmosphere to diffuse the impurity into the surface and simultaneously form an oxide film on the body and subsequently removing part of the film and diffusing a second impurity into the exposed part. To form a NPN transistor an N-type silicon wafer is heated in boron oxide vapour at 700-1100‹ C. to form a deposit of boron which is subsequently diffused into the wafer to form a P-type layer by heating at 1000-1300‹ C. in an oxidizing atmosphere for 1-2 hours. An oxide layer is formed at the same time by the reaction with the atmosphere which may consist of wet oxygen, hydrogen or nitrogen or dry oxygen. Part of the oxide layer is then removed by the photo-resist method and donor impurity diffused into the exposed P-type layer to form an N-type layer thereon.
GB37000/60A 1959-10-29 1960-10-27 A method of manufacturing a diffusion type semiconductor device Expired GB910857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3415559 1959-10-29

Publications (1)

Publication Number Publication Date
GB910857A true GB910857A (en) 1962-11-21

Family

ID=12406298

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37000/60A Expired GB910857A (en) 1959-10-29 1960-10-27 A method of manufacturing a diffusion type semiconductor device

Country Status (3)

Country Link
DE (1) DE1158181B (en)
GB (1) GB910857A (en)
NL (1) NL256928A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL210216A (en) * 1955-12-02
BE570082A (en) * 1957-08-07 1900-01-01
FR1211756A (en) * 1958-10-07 1960-03-18 Lignes Telegraph Telephon Boron diffusion process in silicon

Also Published As

Publication number Publication date
DE1158181B (en) 1963-11-28
NL256928A (en)

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