DE112022003832T5 - Halbleitervorrichtung - Google Patents
Halbleitervorrichtung Download PDFInfo
- Publication number
- DE112022003832T5 DE112022003832T5 DE112022003832.2T DE112022003832T DE112022003832T5 DE 112022003832 T5 DE112022003832 T5 DE 112022003832T5 DE 112022003832 T DE112022003832 T DE 112022003832T DE 112022003832 T5 DE112022003832 T5 DE 112022003832T5
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- transistor
- circuit
- sig
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 239000003990 capacitor Substances 0.000 claims abstract description 147
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
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- RFHAOTPXVQNOHP-UHFFFAOYSA-N fluconazole Chemical compound C1=NC=NN1CC(C=1C(=CC(F)=CC=1)F)(O)CN1C=NC=N1 RFHAOTPXVQNOHP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/14—Indicating direction of current; Indicating polarity of voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-139899 | 2021-08-30 | ||
| JP2021-139902 | 2021-08-30 | ||
| JP2021139893 | 2021-08-30 | ||
| JP2021139902 | 2021-08-30 | ||
| JP2021139898 | 2021-08-30 | ||
| JP2021-139898 | 2021-08-30 | ||
| JP2021-139893 | 2021-08-30 | ||
| JP2021139899 | 2021-08-30 | ||
| JP2021-139895 | 2021-08-30 | ||
| JP2021139895 | 2021-08-30 | ||
| PCT/JP2022/024328 WO2023032413A1 (ja) | 2021-08-30 | 2022-06-17 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112022003832T5 true DE112022003832T5 (de) | 2024-05-23 |
Family
ID=85412065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112022003832.2T Pending DE112022003832T5 (de) | 2021-08-30 | 2022-06-17 | Halbleitervorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240204777A1 (https=) |
| JP (1) | JPWO2023032413A1 (https=) |
| DE (1) | DE112022003832T5 (https=) |
| WO (1) | WO2023032413A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11108390B2 (en) * | 2020-01-06 | 2021-08-31 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device and circuit therefor |
| US20250149990A1 (en) * | 2023-11-03 | 2025-05-08 | Stmicroelectronics International N.V. | Self-adjusting bootstrap recharge system in dual-switch flyback converters |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018019498A (ja) | 2016-07-27 | 2018-02-01 | ローム株式会社 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8154334B2 (en) * | 2009-07-21 | 2012-04-10 | Intersil America Inc. | System and method for pre-charging a bootstrap capacitor in a switching regulator with high pre-bias voltage |
| US9124276B2 (en) * | 2012-12-20 | 2015-09-01 | Qualcomm Incorporated | Sense amplifier including a level shifter |
| US10673426B2 (en) * | 2018-08-08 | 2020-06-02 | University Of Electronic Science And Technology Of China | Switch bootstrap charging circuit suitable for gate drive circuit of GaN power device |
| US11251691B2 (en) * | 2019-09-23 | 2022-02-15 | Stmicroelectronics Asia Pacific Pte Ltd | Floating power supply for a driver circuit configured to drive a high-side switching transistor |
| WO2021126826A1 (en) * | 2019-12-16 | 2021-06-24 | Power Integrations, Inc. | Control of a resonant converter using switch paths during power-up |
| IT202000016072A1 (it) * | 2020-07-02 | 2022-01-02 | St Microelectronics Srl | Circuito di pilotaggio, dispositivo e procedimento di funzionamento corrispondenti |
| US11095229B1 (en) * | 2020-09-24 | 2021-08-17 | Monolithic Power Systems, Inc. | High switching frequency direct AC to AC converter |
-
2022
- 2022-06-17 JP JP2023545105A patent/JPWO2023032413A1/ja active Pending
- 2022-06-17 WO PCT/JP2022/024328 patent/WO2023032413A1/ja not_active Ceased
- 2022-06-17 DE DE112022003832.2T patent/DE112022003832T5/de active Pending
-
2024
- 2024-02-28 US US18/590,556 patent/US20240204777A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018019498A (ja) | 2016-07-27 | 2018-02-01 | ローム株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240204777A1 (en) | 2024-06-20 |
| WO2023032413A1 (ja) | 2023-03-09 |
| JPWO2023032413A1 (https=) | 2023-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |