JPWO2023032413A1 - - Google Patents

Info

Publication number
JPWO2023032413A1
JPWO2023032413A1 JP2023545105A JP2023545105A JPWO2023032413A1 JP WO2023032413 A1 JPWO2023032413 A1 JP WO2023032413A1 JP 2023545105 A JP2023545105 A JP 2023545105A JP 2023545105 A JP2023545105 A JP 2023545105A JP WO2023032413 A1 JPWO2023032413 A1 JP WO2023032413A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023545105A
Other languages
Japanese (ja)
Other versions
JPWO2023032413A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023032413A1 publication Critical patent/JPWO2023032413A1/ja
Publication of JPWO2023032413A5 publication Critical patent/JPWO2023032413A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/14Indicating direction of current; Indicating polarity of voltage
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30Modifications for providing a predetermined threshold before switching
    • H03K2017/307Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081Power supply means, e.g. to the switch driver
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
JP2023545105A 2021-08-30 2022-06-17 Pending JPWO2023032413A1 (https=)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2021139893 2021-08-30
JP2021139902 2021-08-30
JP2021139898 2021-08-30
JP2021139899 2021-08-30
JP2021139895 2021-08-30
PCT/JP2022/024328 WO2023032413A1 (ja) 2021-08-30 2022-06-17 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023032413A1 true JPWO2023032413A1 (https=) 2023-03-09
JPWO2023032413A5 JPWO2023032413A5 (https=) 2024-05-23

Family

ID=85412065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545105A Pending JPWO2023032413A1 (https=) 2021-08-30 2022-06-17

Country Status (4)

Country Link
US (1) US20240204777A1 (https=)
JP (1) JPWO2023032413A1 (https=)
DE (1) DE112022003832T5 (https=)
WO (1) WO2023032413A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11108390B2 (en) * 2020-01-06 2021-08-31 Semiconductor Components Industries, Llc Method of forming a semiconductor device and circuit therefor
US20250149990A1 (en) * 2023-11-03 2025-05-08 Stmicroelectronics International N.V. Self-adjusting bootstrap recharge system in dual-switch flyback converters

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210091655A1 (en) * 2019-09-23 2021-03-25 Stmicroelectronics Asia Pacific Pte Ltd Floating power supply for a driver circuit configured to drive a high-side switching transistor
US11095229B1 (en) * 2020-09-24 2021-08-17 Monolithic Power Systems, Inc. High switching frequency direct AC to AC converter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8154334B2 (en) * 2009-07-21 2012-04-10 Intersil America Inc. System and method for pre-charging a bootstrap capacitor in a switching regulator with high pre-bias voltage
US9124276B2 (en) * 2012-12-20 2015-09-01 Qualcomm Incorporated Sense amplifier including a level shifter
JP6844967B2 (ja) 2016-07-27 2021-03-17 ローム株式会社 半導体装置
US10673426B2 (en) * 2018-08-08 2020-06-02 University Of Electronic Science And Technology Of China Switch bootstrap charging circuit suitable for gate drive circuit of GaN power device
WO2021126826A1 (en) * 2019-12-16 2021-06-24 Power Integrations, Inc. Control of a resonant converter using switch paths during power-up
IT202000016072A1 (it) * 2020-07-02 2022-01-02 St Microelectronics Srl Circuito di pilotaggio, dispositivo e procedimento di funzionamento corrispondenti

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210091655A1 (en) * 2019-09-23 2021-03-25 Stmicroelectronics Asia Pacific Pte Ltd Floating power supply for a driver circuit configured to drive a high-side switching transistor
US11095229B1 (en) * 2020-09-24 2021-08-17 Monolithic Power Systems, Inc. High switching frequency direct AC to AC converter

Also Published As

Publication number Publication date
DE112022003832T5 (de) 2024-05-23
US20240204777A1 (en) 2024-06-20
WO2023032413A1 (ja) 2023-03-09

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