DE112019002193A5 - Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers - Google Patents

Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers Download PDF

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Publication number
DE112019002193A5
DE112019002193A5 DE112019002193.1T DE112019002193T DE112019002193A5 DE 112019002193 A5 DE112019002193 A5 DE 112019002193A5 DE 112019002193 T DE112019002193 T DE 112019002193T DE 112019002193 A5 DE112019002193 A5 DE 112019002193A5
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Germany
Prior art keywords
optoelectronic semiconductor
semiconductor body
multiplicity
producing
arrangement
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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DE112019002193.1T
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English (en)
Inventor
Tansen Varghese
Dr. Avramescu Adrian Stefan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Oled GmbH
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Osram Oled GmbH
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Publication date
Application filed by Osram Oled GmbH filed Critical Osram Oled GmbH
Publication of DE112019002193A5 publication Critical patent/DE112019002193A5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
DE112019002193.1T 2018-04-27 2019-04-11 Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers Pending DE112019002193A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018110187.2A DE102018110187A1 (de) 2018-04-27 2018-04-27 Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102018110187.2 2018-04-27
PCT/EP2019/059324 WO2019206669A1 (de) 2018-04-27 2019-04-11 Optoelektronischer halbleiterkörper, anordnung von einer vielzahl von optoelektronischen halbleiterkörpern und verfahren zur herstellung eines optoelektronischen halbleiterkörpers

Publications (1)

Publication Number Publication Date
DE112019002193A5 true DE112019002193A5 (de) 2021-02-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102018110187.2A Withdrawn DE102018110187A1 (de) 2018-04-27 2018-04-27 Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE112019002193.1T Pending DE112019002193A5 (de) 2018-04-27 2019-04-11 Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102018110187.2A Withdrawn DE102018110187A1 (de) 2018-04-27 2018-04-27 Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers

Country Status (3)

Country Link
US (1) US20210226090A1 (de)
DE (2) DE102018110187A1 (de)
WO (1) WO2019206669A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018111227A1 (de) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip
DE102021102332A1 (de) 2021-02-02 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer anordnung von halbleiterchips und anordnung von halbleiterchips
CN117581388A (zh) * 2021-07-02 2024-02-20 艾迈斯-欧司朗国际有限责任公司 光电半导体器件、光电半导体器件阵列和制造光电半导体器件的方法

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Publication number Priority date Publication date Assignee Title
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
US5441912A (en) * 1993-07-28 1995-08-15 The Furukawa Electric Co., Ltd. Method of manufacturing a laser diode
US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
US6028875A (en) * 1996-10-11 2000-02-22 Nortel Networks Corporation Buried heterostructure laser with quaternary current blocking layer
EP0995970A3 (de) * 1998-10-19 2000-10-18 Canon Kabushiki Kaisha Kreisel und Verfahren zu seinem Betrieb
US6775308B2 (en) * 2001-06-29 2004-08-10 Xanoptix, Inc. Multi-wavelength semiconductor laser arrays and applications thereof
KR101449030B1 (ko) * 2008-04-05 2014-10-08 엘지이노텍 주식회사 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
US8384114B2 (en) * 2009-06-27 2013-02-26 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9076923B2 (en) * 2012-02-13 2015-07-07 Epistar Corporation Light-emitting device manufacturing method
CN104247176B (zh) * 2012-05-16 2017-03-08 松下知识产权经营株式会社 半导体发光元件
US9269874B2 (en) * 2012-05-31 2016-02-23 Konica Minolta, Inc. Sealing material for light emitting device, light emitting device using the same, and manufacturing method for light emitting device
US9865772B2 (en) * 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
DE102015107593A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Leuchtmittel
US10170455B2 (en) * 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置
US10249736B2 (en) * 2016-06-15 2019-04-02 International Business Machines Corporation Aspect ratio trapping in channel last process

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US20210226090A1 (en) 2021-07-22
WO2019206669A1 (de) 2019-10-31
DE102018110187A1 (de) 2019-10-31

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