DE112017001576B4 - Metrologiesystem für alle oberflächenschichten - Google Patents

Metrologiesystem für alle oberflächenschichten

Info

Publication number
DE112017001576B4
DE112017001576B4 DE112017001576.6T DE112017001576T DE112017001576B4 DE 112017001576 B4 DE112017001576 B4 DE 112017001576B4 DE 112017001576 T DE112017001576 T DE 112017001576T DE 112017001576 B4 DE112017001576 B4 DE 112017001576B4
Authority
DE
Germany
Prior art keywords
wafer
layer
light
layer stack
stack model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112017001576.6T
Other languages
German (de)
English (en)
Other versions
DE112017001576T5 (de
Inventor
Shifang Li
Lena Nicolaides
Paul Horn
Richard Graetz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of DE112017001576T5 publication Critical patent/DE112017001576T5/de
Application granted granted Critical
Publication of DE112017001576B4 publication Critical patent/DE112017001576B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Medical Informatics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Geometry (AREA)
  • Biomedical Technology (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
DE112017001576.6T 2016-03-28 2017-03-27 Metrologiesystem für alle oberflächenschichten Active DE112017001576B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662314276P 2016-03-28 2016-03-28
US62/314,276 2016-03-28
US15/255,605 US10563973B2 (en) 2016-03-28 2016-09-02 All surface film metrology system
US15/255,605 2016-09-02
PCT/US2017/024332 WO2017172627A1 (en) 2016-03-28 2017-03-27 All surface film metrology system

Publications (2)

Publication Number Publication Date
DE112017001576T5 DE112017001576T5 (de) 2018-12-20
DE112017001576B4 true DE112017001576B4 (de) 2025-12-11

Family

ID=59898812

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112017001576.6T Active DE112017001576B4 (de) 2016-03-28 2017-03-27 Metrologiesystem für alle oberflächenschichten

Country Status (8)

Country Link
US (1) US10563973B2 (enExample)
JP (1) JP6774501B2 (enExample)
KR (1) KR102177682B1 (enExample)
CN (1) CN109155263B (enExample)
DE (1) DE112017001576B4 (enExample)
IL (1) IL261451B (enExample)
TW (1) TWI734761B (enExample)
WO (1) WO2017172627A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI784719B (zh) * 2016-08-26 2022-11-21 美商應用材料股份有限公司 獲得代表在基板上的層的厚度的測量的方法，及量測系統和電腦程式產品
CN108022849B (zh) * 2017-11-30 2020-06-16 上海华力微电子有限公司 一种亮场缺陷检测设备自动优化光强条件的方法及系统
US11164768B2 (en) 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production
TWI830864B (zh) * 2019-02-07 2024-02-01 美商應用材料股份有限公司 使用色彩度量術進行的基板的厚度測量
KR102810856B1 (ko) 2019-09-02 2025-05-20 삼성전자주식회사 반도체 소자 제조 장치, 반도체 소자 검사 장치 및 반도체 소자 제조 방법
US11221300B2 (en) 2020-03-20 2022-01-11 KLA Corp. Determining metrology-like information for a specimen using an inspection tool
US11544838B2 (en) * 2020-03-21 2023-01-03 Kla Corporation Systems and methods of high-resolution review for semiconductor inspection in backend and wafer level packaging
KR20230148849A (ko) 2021-03-04 2023-10-25 어플라이드 머티어리얼스, 인코포레이티드 기판 이미지들의 프로세싱에 기초한 필름 불균일의 픽셀 및 영역 분류
CN119555020A (zh) * 2025-02-05 2025-03-04 四川省开璞环保包装制品有限公司 一种环保无纺布表面涂层检测方法及系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293214A (en) * 1991-12-06 1994-03-08 Hughes Aircraft Company Apparatus and method for performing thin film layer thickness metrology by deforming a thin film layer into a reflective condenser
US20040012775A1 (en) * 2000-11-15 2004-01-22 Kinney Patrick D. Optical method and apparatus for inspecting large area planar objects
JP2012251816A (ja) * 2011-06-01 2012-12-20 Toshiba Mitsubishi-Electric Industrial System Corp 形状測定装置
JP2015141176A (ja) * 2014-01-30 2015-08-03 浜松ホトニクス株式会社 膜厚計測方法及び膜厚計測装置

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US5333049A (en) * 1991-12-06 1994-07-26 Hughes Aircraft Company Apparatus and method for interferometrically measuring the thickness of thin films using full aperture irradiation
JP4202841B2 (ja) 2003-06-30 2008-12-24 株式会社Ｓｕｍｃｏ 表面研磨装置
KR101295207B1 (ko) * 2003-09-15 2013-08-09 지고 코포레이션 표면에 대한 간섭 측정의 분석
TW200604491A (en) * 2004-07-15 2006-02-01 Zygo Corp Transparent film measurements
JP4885212B2 (ja) * 2005-05-19 2012-02-29 ザイゴ コーポレーション 薄膜構造についての情報に関する低コヒーレンス干渉計信号を解析するための方法およびシステム
WO2007092950A2 (en) 2006-02-09 2007-08-16 Kla-Tencor Technologies Corporation Methods and systems for determining a characteristic of a wafer
US7463369B2 (en) * 2006-03-29 2008-12-09 Kla-Tencor Technologies Corp. Systems and methods for measuring one or more characteristics of patterned features on a specimen
JP5030604B2 (ja) * 2007-01-29 2012-09-19 セイコーインスツル株式会社 ウェハ外観検査装置
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
US7782452B2 (en) 2007-08-31 2010-08-24 Kla-Tencor Technologies Corp. Systems and method for simultaneously inspecting a specimen with two distinct channels
US8685596B2 (en) * 2007-12-04 2014-04-01 Sharp Laboratories Of America, Inc. Semi-transparent film grayscale mask
TWI521625B (zh) * 2010-07-30 2016-02-11 應用材料股份有限公司 使用光譜監測來偵測層級清除
DE102011101416B4 (de) 2011-05-13 2016-06-16 MTU Aero Engines AG Dickenmessung einer Beschichtung eines rotierenden Bauteils unter Berücksichtigung der Wärmeausdehnung
US8843875B2 (en) * 2012-05-08 2014-09-23 Kla-Tencor Corporation Measurement model optimization based on parameter variations across a wafer
TWI597491B (zh) * 2012-09-28 2017-09-01 魯道夫科技股份有限公司 光學系統、晶圓檢測系統以及光學檢測的方法
US9658150B2 (en) 2015-01-12 2017-05-23 Kla-Tencor Corporation System and method for semiconductor wafer inspection and metrology
US9747520B2 (en) 2015-03-16 2017-08-29 Kla-Tencor Corporation Systems and methods for enhancing inspection sensitivity of an inspection tool

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293214A (en) * 1991-12-06 1994-03-08 Hughes Aircraft Company Apparatus and method for performing thin film layer thickness metrology by deforming a thin film layer into a reflective condenser
US20040012775A1 (en) * 2000-11-15 2004-01-22 Kinney Patrick D. Optical method and apparatus for inspecting large area planar objects
JP2012251816A (ja) * 2011-06-01 2012-12-20 Toshiba Mitsubishi-Electric Industrial System Corp 形状測定装置
JP2015141176A (ja) * 2014-01-30 2015-08-03 浜松ホトニクス株式会社 膜厚計測方法及び膜厚計測装置

Also Published As

Publication number Publication date
JP6774501B2 (ja) 2020-10-28
WO2017172627A1 (en) 2017-10-05
WO2017172627A9 (en) 2018-11-22
TW201801216A (zh) 2018-01-01
KR20180121663A (ko) 2018-11-07
IL261451B (en) 2022-03-01
JP2019516239A (ja) 2019-06-13
CN109155263B (zh) 2023-06-02
CN109155263A (zh) 2019-01-04
TWI734761B (zh) 2021-08-01
DE112017001576T5 (de) 2018-12-20
US10563973B2 (en) 2020-02-18
IL261451A (en) 2018-12-31
US20170278236A1 (en) 2017-09-28
KR102177682B1 (ko) 2020-11-11

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Legal Events

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R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R079 Amendment of ipc main class

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Ipc: H10P0074000000