DE112015003784B4 - Halbleiter-Leistungsmodul und Halbleiteransteuerungsvorrichtung - Google Patents

Halbleiter-Leistungsmodul und Halbleiteransteuerungsvorrichtung Download PDF

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Publication number
DE112015003784B4
DE112015003784B4 DE112015003784.5T DE112015003784T DE112015003784B4 DE 112015003784 B4 DE112015003784 B4 DE 112015003784B4 DE 112015003784 T DE112015003784 T DE 112015003784T DE 112015003784 B4 DE112015003784 B4 DE 112015003784B4
Authority
DE
Germany
Prior art keywords
terminal
main
mutual inductance
switching element
main electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112015003784.5T
Other languages
German (de)
English (en)
Other versions
DE112015003784T5 (de
Inventor
Keisuke Horiuchi
Masamitsu Inaba
Daisuke Kawase
Katsuaki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Power Semiconductor Device Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Power Semiconductor Device Ltd
Publication of DE112015003784T5 publication Critical patent/DE112015003784T5/de
Application granted granted Critical
Publication of DE112015003784B4 publication Critical patent/DE112015003784B4/de
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Landscapes

  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)
DE112015003784.5T 2014-09-26 2015-09-10 Halbleiter-Leistungsmodul und Halbleiteransteuerungsvorrichtung Active DE112015003784B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014196129A JP6373702B2 (ja) 2014-09-26 2014-09-26 半導体パワーモジュール及び半導体駆動装置
JP2014-196129 2014-09-26
PCT/JP2015/075728 WO2016047455A1 (ja) 2014-09-26 2015-09-10 半導体パワーモジュール及び半導体駆動装置

Publications (2)

Publication Number Publication Date
DE112015003784T5 DE112015003784T5 (de) 2017-06-01
DE112015003784B4 true DE112015003784B4 (de) 2024-12-12

Family

ID=55580982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112015003784.5T Active DE112015003784B4 (de) 2014-09-26 2015-09-10 Halbleiter-Leistungsmodul und Halbleiteransteuerungsvorrichtung

Country Status (3)

Country Link
JP (1) JP6373702B2 (enExample)
DE (1) DE112015003784B4 (enExample)
WO (1) WO2016047455A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3442019A4 (en) 2016-04-06 2019-12-04 Shindengen Electric Manufacturing Co., Ltd. POWER MODULE
EP3477834A4 (en) * 2016-06-22 2020-02-12 Hitachi Industrial Equipment Systems Co., Ltd. POWER CONVERSION DEVICE
JP2018200953A (ja) 2017-05-26 2018-12-20 ルネサスエレクトロニクス株式会社 電子装置
CN110800204B (zh) * 2017-08-03 2022-05-10 株式会社日立制作所 电力转换装置及搭载电力转换装置的车辆
JP2021083262A (ja) * 2019-11-21 2021-05-27 株式会社デンソー インバータ装置
CN111416520B (zh) * 2020-02-25 2022-03-18 厦门大学 基于磁通相消的同步整流占空比丢失补偿方法与变换器
JP7286582B2 (ja) 2020-03-24 2023-06-05 株式会社東芝 半導体装置
JP7407675B2 (ja) * 2020-08-18 2024-01-04 株式会社 日立パワーデバイス パワー半導体モジュールおよび電力変換装置
JP2023081134A (ja) 2021-11-30 2023-06-09 富士電機株式会社 半導体モジュール、半導体装置、及び車両
JP2023109317A (ja) 2022-01-27 2023-08-08 株式会社 日立パワーデバイス パワー半導体モジュール
JP2023140611A (ja) * 2022-03-23 2023-10-05 株式会社 日立パワーデバイス 半導体装置、電力変換装置
WO2023233536A1 (ja) * 2022-05-31 2023-12-07 ファナック株式会社 モータ駆動装置、モータ駆動方法およびモータ駆動プログラム
CN118901133A (zh) 2022-10-13 2024-11-05 富士电机株式会社 半导体模块
JP2025043923A (ja) * 2023-09-19 2025-04-01 株式会社東芝 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000324846A (ja) 1999-05-14 2000-11-24 Hitachi Ltd 電力変換装置
JP2007259533A (ja) 2006-03-22 2007-10-04 Hitachi Ltd 半導体素子の保護回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098620A (ja) * 1995-06-20 1997-01-10 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタの過電流保護回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000324846A (ja) 1999-05-14 2000-11-24 Hitachi Ltd 電力変換装置
JP2007259533A (ja) 2006-03-22 2007-10-04 Hitachi Ltd 半導体素子の保護回路

Also Published As

Publication number Publication date
JP2016066974A (ja) 2016-04-28
WO2016047455A1 (ja) 2016-03-31
JP6373702B2 (ja) 2018-08-15
DE112015003784T5 (de) 2017-06-01

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R012 Request for examination validly filed
R018 Grant decision by examination section/examining division
R081 Change of applicant/patentee

Owner name: MINEBEA POWER SEMICONDUCTOR DEVICE INC., HITAC, JP

Free format text: FORMER OWNER: HITACHI POWER SEMICONDUCTOR DEVICE, LTD., HITACHI-SHI, LBARAKI, JP

R020 Patent grant now final