DE112014004093T5 - Massen-Siliciumcarbid mit geringer Defektdichte - Google Patents

Massen-Siliciumcarbid mit geringer Defektdichte Download PDF

Info

Publication number
DE112014004093T5
DE112014004093T5 DE112014004093.2T DE112014004093T DE112014004093T5 DE 112014004093 T5 DE112014004093 T5 DE 112014004093T5 DE 112014004093 T DE112014004093 T DE 112014004093T DE 112014004093 T5 DE112014004093 T5 DE 112014004093T5
Authority
DE
Germany
Prior art keywords
silicon carbide
single crystal
carbide single
crystal body
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112014004093.2T
Other languages
German (de)
English (en)
Inventor
Roman V. Drachev
Andriy M. Andrukhiv
David S. Lyttle
Parthasarathy Santhanaraghavan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of DE112014004093T5 publication Critical patent/DE112014004093T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112014004093.2T 2013-09-06 2014-09-05 Massen-Siliciumcarbid mit geringer Defektdichte Pending DE112014004093T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874640P 2013-09-06 2013-09-06
US61/874,640 2013-09-06
PCT/US2014/054301 WO2015035170A1 (en) 2013-09-06 2014-09-05 Bulk silicon carbide having low defect density

Publications (1)

Publication Number Publication Date
DE112014004093T5 true DE112014004093T5 (de) 2016-06-23

Family

ID=52625896

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014004093.2T Pending DE112014004093T5 (de) 2013-09-06 2014-09-05 Massen-Siliciumcarbid mit geringer Defektdichte

Country Status (7)

Country Link
US (1) US9512542B2 (https=)
JP (2) JP6574775B2 (https=)
KR (1) KR102245509B1 (https=)
CN (1) CN105518191B (https=)
DE (1) DE112014004093T5 (https=)
TW (1) TWI648218B (https=)
WO (1) WO2015035170A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660076B (zh) * 2017-10-06 2019-05-21 環球晶圓股份有限公司 碳化矽晶體及其製造方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023103015A (ja) * 2022-01-13 2023-07-26 信越半導体株式会社 炭化珪素単結晶製造方法、及び炭化珪素単結晶製造装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
DE59607635D1 (de) * 1995-08-16 2001-10-11 Siemens Ag KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US6508880B2 (en) * 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
WO2008089181A2 (en) * 2007-01-16 2008-07-24 Ii-Vi Incorporated Guided diameter sic sublimation growth with multi-layer growth guide
JP5779171B2 (ja) * 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
EP2477944A4 (en) * 2009-09-15 2013-08-28 Ii Vi Inc SUBLIMATION BREEDING OF SIC INDIVIDUAL CRYSTALS
WO2011065060A1 (ja) * 2009-11-30 2011-06-03 住友電気工業株式会社 単結晶の製造方法
JP5614387B2 (ja) * 2011-08-29 2014-10-29 新日鐵住金株式会社 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット
JP5696630B2 (ja) * 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
WO2013159083A1 (en) * 2012-04-20 2013-10-24 Ii-Vi Incorporated LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS
DE112014004088T5 (de) * 2013-09-06 2016-06-23 Gtat Corporation Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid unter Verwendung eines Siliciumcarbid-Impfkristalls

Also Published As

Publication number Publication date
CN105518191B (zh) 2021-05-11
JP2016531837A (ja) 2016-10-13
KR102245509B1 (ko) 2021-04-28
JP2019214512A (ja) 2019-12-19
JP7054934B2 (ja) 2022-04-15
WO2015035170A1 (en) 2015-03-12
TWI648218B (zh) 2019-01-21
JP6574775B2 (ja) 2019-09-11
TW201515995A (zh) 2015-05-01
KR20160050088A (ko) 2016-05-10
US20150072101A1 (en) 2015-03-12
US9512542B2 (en) 2016-12-06
CN105518191A (zh) 2016-04-20

Similar Documents

Publication Publication Date Title
DE112014004088T5 (de) Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid unter Verwendung eines Siliciumcarbid-Impfkristalls
DE112014004073B4 (de) Sublimationsofen
DE112014004096T5 (de) Verfahren zur Herstellung von Massen-Siliciumcarbid
DE112014004056T5 (de) Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer
DE112010004736B4 (de) Aufnahmefür cvd und verfahren zur herstellung eines films unterverwendung derselben
DE69804411T3 (de) Verfahren zur Herstellung eines Calciumfluoridkristalles und zur Behandlung eines Calciumfluoridpulvers
DE112012000726B4 (de) Suszeptor und Verfahren zum Herstellen eines Epitaxialwafers unter Verwendung desselben
DE112011101177T5 (de) Verfahren zum Fertigen eines Halbleiter-Einkristalls
DE112018002163B4 (de) Verfahren zur Herstellung eines Silicium-Einkristalls, Verfahren zur Herstellung eines epitaktischen Silicium-Wafers, Silicium-Einkristall, und epitaktischer Silicium-Wafer
EP3721469A1 (de) Verfahren zum abscheiden einer epitaktischen schicht auf einer vorderseite einer halbleiterscheibe und vorrichtung zur durchführung des verfahrens
DE112011102504T5 (de) Verbesserter Reaktor zur chemischen Gasphasenabscheidung
DE112014004093T5 (de) Massen-Siliciumcarbid mit geringer Defektdichte
DE102022119343B4 (de) Kristallzüchtungsvorrichtung, Verfahren zum Züchten eines Halbleiters, Halbleiter und dessen Verwendung und Halbleiter-Substrat
DE112012004967T5 (de) Vorrichtung und Verfahren zur Züchtung von Ingots
DE102019109551B4 (de) Wärmeisolierendes abschirmungselement und einkristall-herstellungsvorrichtung, welche dieses aufweist
DE112018002717T5 (de) Verfahren zur Herstellung eines Silicium-Einkristalls
DE102009016137B4 (de) Herstellungsverfahren für einen versetzungsarmen AlN-Volumeneinkristall und versetzungsarmes einkristallines AlN-Substrat
WO2022028910A1 (de) Waferträger und system für eine epitaxievorrichtung

Legal Events

Date Code Title Description
R082 Change of representative

Representative=s name: GILLE HRABAL PARTNERSCHAFTSGESELLSCHAFT MBB PA, DE

Representative=s name: GILLE HRABAL, DE

R012 Request for examination validly filed
R016 Response to examination communication
R082 Change of representative

Representative=s name: MANITZ FINSTERWALD PATENT- UND RECHTSANWALTSPA, DE

R016 Response to examination communication