DE112014001423T5 - Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen - Google Patents

Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen Download PDF

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DE112014001423T5
DE112014001423T5 DE112014001423.0T DE112014001423T DE112014001423T5 DE 112014001423 T5 DE112014001423 T5 DE 112014001423T5 DE 112014001423 T DE112014001423 T DE 112014001423T DE 112014001423 T5 DE112014001423 T5 DE 112014001423T5
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Prior art keywords
layer
layers
semiconductor structure
electron
ingan
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Ceased
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DE112014001423.0T
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German (de)
English (en)
Inventor
Jean-Philippe Debray
Chantal Arena
Richard Scott Kern
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Soitec SA
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Soitec SA
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Priority claimed from FR1300823A external-priority patent/FR3003397B1/fr
Priority claimed from FR1300923A external-priority patent/FR3004585B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Publication of DE112014001423T5 publication Critical patent/DE112014001423T5/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Device Packages (AREA)
DE112014001423.0T 2013-03-15 2014-03-17 Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen Ceased DE112014001423T5 (de)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US201361790085P 2013-03-15 2013-03-15
US201361788441P 2013-03-15 2013-03-15
US201361789792P 2013-03-15 2013-03-15
US61/789,792 2013-03-15
US61/788,441 2013-03-15
US61/790,085 2013-03-15
FR1300823 2013-04-08
FR1300823A FR3003397B1 (fr) 2013-03-15 2013-04-08 Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
FR1300860 2013-04-11
FR1300860A FR3003396B1 (fr) 2013-03-15 2013-04-11 Structures semi-conductrices dotees de regions actives comprenant de l'ingan
FR1300923 2013-04-12
FR1300923A FR3004585B1 (fr) 2013-04-12 2013-04-12 Structures semi-conductrices dotees de regions actives comprenant de l'ingan
PCT/EP2014/055316 WO2014140371A1 (en) 2013-03-15 2014-03-17 Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

Publications (1)

Publication Number Publication Date
DE112014001423T5 true DE112014001423T5 (de) 2015-12-24

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DE112014001385.4T Pending DE112014001385T5 (de) 2013-03-15 2014-03-17 Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung
DE112014001423.0T Ceased DE112014001423T5 (de) 2013-03-15 2014-03-17 Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen
DE112014001352.8T Ceased DE112014001352T5 (de) 2013-03-15 2014-03-17 Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten

Family Applications Before (1)

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DE112014001385.4T Pending DE112014001385T5 (de) 2013-03-15 2014-03-17 Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung

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DE112014001352.8T Ceased DE112014001352T5 (de) 2013-03-15 2014-03-17 Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten

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JP (3) JP2016513880A (zh)
CN (3) CN105051918A (zh)
DE (3) DE112014001385T5 (zh)
WO (3) WO2014140371A1 (zh)

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TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
EP3596756B1 (fr) * 2017-03-17 2023-02-15 Soitec Procédé de fabrication d'une pluralité d'îlots semi-conducteurs cristallins présentant une variété de paramètres de maille
US10211297B2 (en) * 2017-05-03 2019-02-19 Globalwafers Co., Ltd. Semiconductor heterostructures and methods for forming same
US11093667B2 (en) * 2017-05-22 2021-08-17 Purdue Research Foundation Method and system for realistic and efficient simulation of light emitting diodes having multi-quantum-wells
US10665750B2 (en) 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
CN110600436A (zh) * 2019-09-05 2019-12-20 方天琦 多层复合基板结构及其制备方法
CN116111015B (zh) * 2023-04-11 2023-07-18 江西兆驰半导体有限公司 一种多量子阱发光层、发光二极管外延片及其制备方法

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US8278193B2 (en) * 2008-10-30 2012-10-02 Soitec Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same
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Publication number Publication date
DE112014001385T5 (de) 2015-12-17
WO2014140372A1 (en) 2014-09-18
JP2016513879A (ja) 2016-05-16
CN105051920A (zh) 2015-11-11
WO2014140370A1 (en) 2014-09-18
JP2016517627A (ja) 2016-06-16
DE112014001352T5 (de) 2015-11-26
JP2016513880A (ja) 2016-05-16
CN105051918A (zh) 2015-11-11
WO2014140371A1 (en) 2014-09-18
CN105051921A (zh) 2015-11-11

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