DE112013003131T5 - Reduktion von Strahlungsthermometrie-Abweichungsfehlern in einem CVD-Reaktor - Google Patents

Reduktion von Strahlungsthermometrie-Abweichungsfehlern in einem CVD-Reaktor Download PDF

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Publication number
DE112013003131T5
DE112013003131T5 DE201311003131 DE112013003131T DE112013003131T5 DE 112013003131 T5 DE112013003131 T5 DE 112013003131T5 DE 201311003131 DE201311003131 DE 201311003131 DE 112013003131 T DE112013003131 T DE 112013003131T DE 112013003131 T5 DE112013003131 T5 DE 112013003131T5
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Germany
Prior art keywords
radiation
target
assembly
heating element
axis
Prior art date
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Pending
Application number
DE201311003131
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German (de)
English (en)
Inventor
c/o Veeco Instruments Inc. Tas Guray
c/o Veeco Instruments Inc. Zhou Jing
c/o Veeco Instruments Inc. Kwon Daewon
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Veeco Instruments Inc
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Veeco Instruments Inc
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Filing date
Publication date
Priority claimed from US13/531,220 external-priority patent/US9085824B2/en
Priority claimed from US13/531,162 external-priority patent/US9448119B2/en
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of DE112013003131T5 publication Critical patent/DE112013003131T5/de
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/07Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Disinfection Or Sterilisation (AREA)
DE201311003131 2012-06-22 2013-06-21 Reduktion von Strahlungsthermometrie-Abweichungsfehlern in einem CVD-Reaktor Pending DE112013003131T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/531,220 US9085824B2 (en) 2012-06-22 2012-06-22 Control of stray radiation in a CVD chamber
US13/531,220 2012-06-22
US13/531,162 US9448119B2 (en) 2012-06-22 2012-06-22 Radiation thermometer using off-focus telecentric optics
US13/531,162 2012-06-22
PCT/US2013/047024 WO2013192510A1 (en) 2012-06-22 2013-06-21 Reduction of radiation thermometry bias errors in a cvd reactor

Publications (1)

Publication Number Publication Date
DE112013003131T5 true DE112013003131T5 (de) 2015-04-16

Family

ID=49769419

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201311003131 Pending DE112013003131T5 (de) 2012-06-22 2013-06-21 Reduktion von Strahlungsthermometrie-Abweichungsfehlern in einem CVD-Reaktor

Country Status (7)

Country Link
JP (1) JP2015528106A (ja)
KR (1) KR101679995B1 (ja)
CN (2) CN104520470B (ja)
DE (1) DE112013003131T5 (ja)
SG (1) SG11201408492QA (ja)
TW (1) TWI576570B (ja)
WO (1) WO2013192510A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103776548A (zh) * 2014-02-14 2014-05-07 丹纳赫(上海)工业仪器技术研发有限公司 红外测温仪以及用于测量能量区域的温度的方法
JP6274578B2 (ja) * 2015-01-09 2018-02-07 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6574344B2 (ja) * 2015-06-23 2019-09-11 株式会社Screenホールディングス 熱処理装置および熱処理方法
EP3287190B1 (de) * 2016-08-26 2020-07-01 Aquila Biolabs GmbH Verfahren zum überwachen eines zielprozessparameters
JP6824080B2 (ja) 2017-03-17 2021-02-03 株式会社Screenホールディングス 熱処理装置および放射温度計の測定位置調整方法
CN108254912B (zh) * 2018-01-23 2020-03-27 电子科技大学 一种用于氮化物mocvd外延生长模式的实时显微监测系统
BR112020026163A2 (pt) * 2018-06-22 2021-03-23 Avava, Inc. detecção de realimentação para um dispositivo de tratamento
CN110006533A (zh) * 2019-04-11 2019-07-12 中国航发湖南动力机械研究所 用于抑制辐射源尺寸效应的器件及辐射测温计

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPS57200827A (en) * 1981-06-04 1982-12-09 Kansai Coke & Chem Co Ltd Temperature measuring method of combustion chamber in coke oven
JPH07104210B2 (ja) * 1987-03-27 1995-11-13 ミノルタ株式会社 放射温度計
US5209570A (en) * 1989-05-30 1993-05-11 Deutsche Forschungsanstalt Fur Luft- Und Raumfahrt E.V. Device for measuring the radiation temperature of a melt in vacuum
US6411377B1 (en) * 1991-04-02 2002-06-25 Hitachi, Ltd. Optical apparatus for defect and particle size inspection
JP4240754B2 (ja) * 1999-05-11 2009-03-18 コニカミノルタセンシング株式会社 テレセントリック光学系
US6614539B1 (en) * 1999-05-11 2003-09-02 Minolta Co., Ltd. Telecentric optical system
US6680377B1 (en) * 1999-05-14 2004-01-20 Brandeis University Nucleic acid-based detection
EP1183521B1 (en) * 1999-05-14 2014-03-19 Brandeis University Aptamer-based detection
US6310347B1 (en) * 1999-06-29 2001-10-30 Goodrich Corporation Spectrometer with planar reflective slit to minimize thermal background at focal plane
US7136159B2 (en) * 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Excimer laser inspection system
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002122480A (ja) * 2000-10-12 2002-04-26 Toshiba Corp 温度測定方法および装置、並びにプラズマ処理装置
KR100673663B1 (ko) * 2001-05-23 2007-01-24 맷슨 써멀 프로덕츠 게엠베하 기판의 열 처리 방법 및 장치
JP4873242B2 (ja) * 2004-06-22 2012-02-08 株式会社ニコン ベストフォーカス検出方法及び露光方法、並びに露光装置
US7275861B2 (en) * 2005-01-31 2007-10-02 Veeco Instruments Inc. Calibration wafer and method of calibrating in situ temperatures
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EP2299250B1 (en) * 2009-09-17 2014-04-23 LayTec Aktiengesellschaft Pyrometer adapted for detecting UV-radiation and use thereof
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JP5565458B2 (ja) * 2010-03-31 2014-08-06 コニカミノルタ株式会社 測定用光学系ならびにそれを用いた色彩輝度計および色彩計

Also Published As

Publication number Publication date
CN107267964B (zh) 2020-06-05
CN104520470A (zh) 2015-04-15
KR101679995B1 (ko) 2016-12-06
JP2015528106A (ja) 2015-09-24
CN104520470B (zh) 2017-05-17
KR20150021119A (ko) 2015-02-27
SG11201408492QA (en) 2015-01-29
TW201403037A (zh) 2014-01-16
CN107267964A (zh) 2017-10-20
WO2013192510A1 (en) 2013-12-27
TWI576570B (zh) 2017-04-01

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