DE112007000898T5 - Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung - Google Patents
Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung Download PDFInfo
- Publication number
- DE112007000898T5 DE112007000898T5 DE112007000898T DE112007000898T DE112007000898T5 DE 112007000898 T5 DE112007000898 T5 DE 112007000898T5 DE 112007000898 T DE112007000898 T DE 112007000898T DE 112007000898 T DE112007000898 T DE 112007000898T DE 112007000898 T5 DE112007000898 T5 DE 112007000898T5
- Authority
- DE
- Germany
- Prior art keywords
- container
- porous
- vapor deposition
- chemical vapor
- liquid reactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims description 30
- 239000007788 liquid Substances 0.000 claims abstract description 49
- 239000000376 reactant Substances 0.000 claims abstract description 39
- 239000012159 carrier gas Substances 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000003708 ampul Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 239000006200 vaporizer Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 description 12
- 239000012705 liquid precursor Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 6
- 230000008016 vaporization Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011344 liquid material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79123006P | 2006-04-11 | 2006-04-11 | |
| US60/791,230 | 2006-04-11 | ||
| US11/697,937 | 2007-04-09 | ||
| US11/697,937 US7967911B2 (en) | 2006-04-11 | 2007-04-09 | Apparatus and methods for chemical vapor deposition |
| PCT/US2007/066366 WO2007121202A1 (en) | 2006-04-11 | 2007-04-11 | Apparatus and methods for chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112007000898T5 true DE112007000898T5 (de) | 2009-05-07 |
Family
ID=38229865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112007000898T Withdrawn DE112007000898T5 (de) | 2006-04-11 | 2007-04-11 | Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7967911B2 (https=) |
| JP (2) | JP5548446B2 (https=) |
| KR (1) | KR101076518B1 (https=) |
| CN (1) | CN101426953B (https=) |
| DE (1) | DE112007000898T5 (https=) |
| WO (1) | WO2007121202A1 (https=) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432371B (en) * | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
| US7967911B2 (en) * | 2006-04-11 | 2011-06-28 | Applied Materials, Inc. | Apparatus and methods for chemical vapor deposition |
| US7740816B1 (en) * | 2008-02-06 | 2010-06-22 | Vapor Point, LLC | Method for treating gases to be scrubbed |
| US7803337B1 (en) | 2008-02-06 | 2010-09-28 | Vapor Point, LLC | Method for treating a fluid to be scrubbed |
| FR2935800B1 (fr) * | 2008-09-09 | 2010-11-19 | R & I Alliance | Procede et dispositif de detection de fuites dans une conduite de liquide souterraine, notamment une conduite d'eau |
| US8568529B2 (en) * | 2009-04-10 | 2013-10-29 | Applied Materials, Inc. | HVPE chamber hardware |
| CN102597310B (zh) * | 2009-11-02 | 2015-02-04 | 西格玛-奥吉奇有限责任公司 | 固态前体输送组件以及相关方法 |
| KR101084997B1 (ko) * | 2011-06-30 | 2011-11-18 | (주)그랜드 텍 | 캐리어 기체에 의한 화합물 기화용 버블러 |
| US8795420B1 (en) * | 2011-07-27 | 2014-08-05 | Vapor Point, LLC | Apparatus for removing unwanted contaminates from gases |
| KR20140096113A (ko) * | 2011-11-10 | 2014-08-04 | 쌩-고벵 크리스톡스 에 드테끄퇴르 | 반도체 결정 물질의 형성에 사용하기 위한 시스템 |
| WO2013126323A1 (en) * | 2012-02-23 | 2013-08-29 | Applied Materials, Inc. | Method and apparatus for precursor delivery |
| US20140242374A1 (en) * | 2013-02-22 | 2014-08-28 | Infineon Technologies Ag | Porous Metal Coating |
| CN104342751B (zh) * | 2013-08-02 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔和mocvd设备 |
| WO2015164029A1 (en) * | 2014-04-21 | 2015-10-29 | Entegris, Inc. | Solid vaporizer |
| US9914632B2 (en) * | 2014-08-22 | 2018-03-13 | Applied Materials, Inc. | Methods and apparatus for liquid chemical delivery |
| US10563305B2 (en) | 2015-05-13 | 2020-02-18 | Versum Materials Us, Llc | Container for chemical precursors in a deposition process |
| TWI624554B (zh) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | 蒸發源 |
| MY190445A (en) | 2015-08-21 | 2022-04-21 | Flisom Ag | Homogeneous linear evaporation source |
| US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
| US10557203B2 (en) | 2016-12-12 | 2020-02-11 | Applied Materials, Inc. | Temperature control system and process for gaseous precursor delivery |
| CN110475905B (zh) | 2017-03-03 | 2025-07-15 | 应用材料公司 | 用于增加来自安瓿的通量的设备 |
| KR102344996B1 (ko) | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
| US10947621B2 (en) * | 2017-10-23 | 2021-03-16 | Applied Materials, Inc. | Low vapor pressure chemical delivery |
| US11166441B2 (en) | 2018-07-13 | 2021-11-09 | Versum Materials Us, Llc | Vapor delivery container with flow distributor |
| CN112323048B (zh) * | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| US11834740B2 (en) * | 2020-11-10 | 2023-12-05 | Applied Materials, Inc. | Apparatus, system, and method for generating gas for use in a process chamber |
| US12054825B2 (en) * | 2021-06-22 | 2024-08-06 | Applied Materials, Inc. | Bottom fed sublimation bed for high saturation efficiency in semiconductor applications |
| FI130131B (en) | 2021-09-07 | 2023-03-09 | Picosun Oy | Precursor container |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4232063A (en) | 1978-11-14 | 1980-11-04 | Applied Materials, Inc. | Chemical vapor deposition reactor and process |
| US4496609A (en) | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
| US4579080A (en) | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| US4668365A (en) | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
| US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60131973A (ja) | 1983-12-19 | 1985-07-13 | Matsushita Electric Ind Co Ltd | 有機金属の気化方法 |
| US5037624A (en) * | 1987-03-24 | 1991-08-06 | Advanced Technology Materials Inc. | Composition, apparatus, and process, for sorption of gaseous compounds of group II-VII elements |
| JPH116065A (ja) * | 1997-06-16 | 1999-01-12 | Seiko Epson Corp | Ｃｖｄに供する液体ソースのバブラー |
| US6444038B1 (en) | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
| CN1160482C (zh) * | 1999-08-20 | 2004-08-04 | 莫顿国际公司 | 双烧结扩散器 |
| DE60106675T2 (de) * | 2000-05-31 | 2005-12-01 | Shipley Co., L.L.C., Marlborough | Verdampfer |
| TW200300701A (en) * | 2001-11-30 | 2003-06-16 | Asml Us Inc | High flow rate bubbler system and method |
| US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| JP4352783B2 (ja) | 2002-08-23 | 2009-10-28 | 東京エレクトロン株式会社 | ガス供給系及び処理システム |
| US7132128B2 (en) | 2005-03-31 | 2006-11-07 | Tokyo Electron Limited | Method and system for depositing material on a substrate using a solid precursor |
| US7967911B2 (en) * | 2006-04-11 | 2011-06-28 | Applied Materials, Inc. | Apparatus and methods for chemical vapor deposition |
-
2007
- 2007-04-09 US US11/697,937 patent/US7967911B2/en active Active
- 2007-04-11 JP JP2009505583A patent/JP5548446B2/ja active Active
- 2007-04-11 DE DE112007000898T patent/DE112007000898T5/de not_active Withdrawn
- 2007-04-11 KR KR1020087027234A patent/KR101076518B1/ko not_active Expired - Fee Related
- 2007-04-11 WO PCT/US2007/066366 patent/WO2007121202A1/en not_active Ceased
- 2007-04-11 CN CN2007800129307A patent/CN101426953B/zh not_active Expired - Fee Related
-
2011
- 2011-05-17 US US13/109,533 patent/US8313804B2/en not_active Expired - Fee Related
-
2012
- 2012-10-11 JP JP2012226073A patent/JP5726831B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4496609A (en) | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
| US4232063A (en) | 1978-11-14 | 1980-11-04 | Applied Materials, Inc. | Chemical vapor deposition reactor and process |
| US4579080A (en) | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| US4668365A (en) | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
| US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101076518B1 (ko) | 2011-10-24 |
| JP2013040410A (ja) | 2013-02-28 |
| US8313804B2 (en) | 2012-11-20 |
| JP5548446B2 (ja) | 2014-07-16 |
| US20110217466A1 (en) | 2011-09-08 |
| CN101426953A (zh) | 2009-05-06 |
| US7967911B2 (en) | 2011-06-28 |
| JP2009533556A (ja) | 2009-09-17 |
| WO2007121202A1 (en) | 2007-10-25 |
| JP5726831B2 (ja) | 2015-06-03 |
| US20080014350A1 (en) | 2008-01-17 |
| KR20080108350A (ko) | 2008-12-12 |
| CN101426953B (zh) | 2012-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8139 | Disposal/non-payment of the annual fee |