DE112004002735A5 - Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer - Google Patents

Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer Download PDF

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Publication number
DE112004002735A5
DE112004002735A5 DE112004002735T DE112004002735T DE112004002735A5 DE 112004002735 A5 DE112004002735 A5 DE 112004002735A5 DE 112004002735 T DE112004002735 T DE 112004002735T DE 112004002735 T DE112004002735 T DE 112004002735T DE 112004002735 A5 DE112004002735 A5 DE 112004002735A5
Authority
DE
Germany
Prior art keywords
arrangement
heat treatment
process chamber
silicon wafers
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112004002735T
Other languages
English (en)
Inventor
Rudolf Berger
Jürgen Zapf
Uwe Gerlicher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE112004002735A5 publication Critical patent/DE112004002735A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
DE112004002735T 2003-12-09 2004-12-09 Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer Withdrawn DE112004002735A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE20319104U DE20319104U1 (de) 2003-12-09 2003-12-09 Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer
DE20319104.8 2003-12-09
PCT/DE2004/002700 WO2005056874A1 (de) 2003-12-09 2004-12-09 Anordnung zur wärmebehandlung von siliziumscheiben in einer prozesskammer

Publications (1)

Publication Number Publication Date
DE112004002735A5 true DE112004002735A5 (de) 2007-05-24

Family

ID=32103633

Family Applications (2)

Application Number Title Priority Date Filing Date
DE20319104U Expired - Lifetime DE20319104U1 (de) 2003-12-09 2003-12-09 Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer
DE112004002735T Withdrawn DE112004002735A5 (de) 2003-12-09 2004-12-09 Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE20319104U Expired - Lifetime DE20319104U1 (de) 2003-12-09 2003-12-09 Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer

Country Status (2)

Country Link
DE (2) DE20319104U1 (de)
WO (1) WO2005056874A1 (de)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
WO1999049101A1 (en) * 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
US6192827B1 (en) * 1998-07-03 2001-02-27 Applied Materials, Inc. Double slit-valve doors for plasma processing
JP2003520429A (ja) * 2000-01-11 2003-07-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 半導体エッチングチャンバ用ライナ
US6707011B2 (en) * 2001-04-17 2004-03-16 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor

Also Published As

Publication number Publication date
WO2005056874A1 (de) 2005-06-23
DE20319104U1 (de) 2004-04-08

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Legal Events

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8139 Disposal/non-payment of the annual fee