DE102004062914A8 - Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils - Google Patents

Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils Download PDF

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Publication number
DE102004062914A8
DE102004062914A8 DE102004062914A DE102004062914A DE102004062914A8 DE 102004062914 A8 DE102004062914 A8 DE 102004062914A8 DE 102004062914 A DE102004062914 A DE 102004062914A DE 102004062914 A DE102004062914 A DE 102004062914A DE 102004062914 A8 DE102004062914 A8 DE 102004062914A8
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DE
Germany
Prior art keywords
manufacturing
photovoltaic conversion
conversion device
photovoltaic
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102004062914A
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English (en)
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DE102004062914A1 (de
Inventor
Koichiro Yohkaichi Niira
Shigeru Yohkaichi Gotoh
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Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of DE102004062914A1 publication Critical patent/DE102004062914A1/de
Publication of DE102004062914A8 publication Critical patent/DE102004062914A8/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE102004062914A 2003-12-25 2004-12-22 Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils Ceased DE102004062914A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003-431594 2003-12-25
JP2003431594A JP4761706B2 (ja) 2003-12-25 2003-12-25 光電変換装置の製造方法
KP2003-431594 2003-12-25

Publications (2)

Publication Number Publication Date
DE102004062914A1 DE102004062914A1 (de) 2005-09-08
DE102004062914A8 true DE102004062914A8 (de) 2006-01-05

Family

ID=34789548

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004062914A Ceased DE102004062914A1 (de) 2003-12-25 2004-12-22 Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils

Country Status (3)

Country Link
US (1) US7317237B2 (de)
JP (1) JP4761706B2 (de)
DE (1) DE102004062914A1 (de)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8420435B2 (en) 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
JP2007095972A (ja) * 2005-09-28 2007-04-12 Kyocera Corp 太陽電池用シリコン基板およびその製造方法
DE102006042329B4 (de) * 2006-09-01 2008-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum selektiven plasmachemischen Trockenätzen von auf Oberflächen von Silicium-Wafern ausgebildetem Phosphorsilikatglas
DE102006041424A1 (de) * 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
US20100304521A1 (en) * 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US8293558B2 (en) * 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US7999174B2 (en) * 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US8084684B2 (en) * 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells
US20080264477A1 (en) * 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105298A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080111206A1 (en) * 2006-11-10 2008-05-15 Evergreen Solar, Inc. Substrate with Two Sided Doping and Method of Producing the Same
NO333757B1 (no) * 2006-12-04 2013-09-09 Elkem Solar As Solceller
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
WO2009026240A1 (en) * 2007-08-17 2009-02-26 Solexel, Inc. Methods for liquid transfer coating of three-dimensional substrates
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20100144080A1 (en) * 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
US20100037948A1 (en) * 2008-08-14 2010-02-18 Integrated Digital Technologies, Inc. Solar cells provided with color modulation and method for fabricating the same
US8022291B2 (en) * 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
EP2356675B1 (de) * 2008-11-13 2016-06-01 Solexel, Inc. Dreidimensionale Dünnschichtsolarzelle und deren Herstellungsverfahren
US8288195B2 (en) * 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
EP2371006A4 (de) * 2008-11-26 2013-05-01 Solexel Inc Trunkierte pyramidenstruktren für durchsichtige solarzellen
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US8926803B2 (en) * 2009-01-15 2015-01-06 Solexel, Inc. Porous silicon electro-etching system and method
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
MY162405A (en) * 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
CN102427971B (zh) * 2009-04-14 2015-01-07 速力斯公司 高效外延化学气相沉积(cvd)反应器
US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
US8247881B2 (en) * 2009-04-27 2012-08-21 University Of Seoul Industry Cooperation Foundation Photodiodes with surface plasmon couplers
CN102460716B (zh) 2009-05-05 2015-03-25 速力斯公司 高生产率多孔半导体制造设备
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
US8445314B2 (en) * 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
US8551866B2 (en) * 2009-05-29 2013-10-08 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
US20110114147A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en) * 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
EP2510550A4 (de) 2009-12-09 2014-12-24 Solexel Inc Hocheffiziente photovoltaische rückseitenkontaktstrukturen für solarzellen und herstellungsverfahren dafür mithilfe dreidimensionaler halbleiter-absorber
JP5447397B2 (ja) * 2010-02-03 2014-03-19 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
US20110256658A1 (en) * 2010-02-05 2011-10-20 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
US20110212564A1 (en) 2010-02-05 2011-09-01 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
TWI548102B (zh) * 2010-04-23 2016-09-01 日立化成股份有限公司 形成ｐ型擴散層的組成物、ｐ型擴散層的製造方法及太陽電池元件的製造方法
CN104916531A (zh) 2010-04-23 2015-09-16 日立化成工业株式会社 n型扩散层形成组合物、n型扩散层的制造方法和太阳能电池元件的制造方法
DE102010017180A1 (de) * 2010-06-01 2011-12-01 Solarworld Innovations Gmbh Solarzelle, Solarmodul, und Verfahren zum Verdrahten einer Solarzelle, und Kontaktdraht
KR20130051013A (ko) 2010-06-09 2013-05-16 솔렉셀, 인크. 고생산성 박막 증착 방법 및 시스템
MY158500A (en) 2010-08-05 2016-10-14 Solexel Inc Backplane reinforcement and interconnects for solar cells
DE102010037355A1 (de) * 2010-09-06 2012-03-08 Schott Solar Ag Kristalline Solarzelle und Verfahren zur Herstellung einer solchen
US9748414B2 (en) 2011-05-20 2017-08-29 Arthur R. Zingher Self-activated front surface bias for a solar cell
JP2013026524A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
JP6030587B2 (ja) * 2014-01-31 2016-11-24 信越化学工業株式会社 太陽電池セルの製造方法
JP2015213177A (ja) * 2015-06-15 2015-11-26 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
FR3059820B1 (fr) * 2016-12-05 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure de temperature
CN107331731A (zh) * 2017-07-04 2017-11-07 合肥市大卓电力有限责任公司 一种太阳能电池晶体硅片磷扩散方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135950A (en) * 1975-09-22 1979-01-23 Communications Satellite Corporation Radiation hardened solar cell
US4490573A (en) * 1979-12-26 1984-12-25 Sera Solar Corporation Solar cells
JPS6445176A (en) * 1987-08-14 1989-02-17 Hitachi Ltd Manufacture of solar cell element
JPH07249666A (ja) * 1994-03-11 1995-09-26 Komatsu Electron Metals Co Ltd シリコンウェーハの鉄濃度測定方法
JP4638012B2 (ja) * 2000-10-27 2011-02-23 信越半導体株式会社 半導体基板とこれを利用した太陽電池セルおよびそれらの製造方法

Also Published As

Publication number Publication date
US7317237B2 (en) 2008-01-08
DE102004062914A1 (de) 2005-09-08
JP4761706B2 (ja) 2011-08-31
JP2005191315A (ja) 2005-07-14
US20050160970A1 (en) 2005-07-28

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Representative=s name: VIERING, JENTSCHURA & PARTNER PATENT- UND RECH, DE

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