DE1118888B - Diffusionstransistor und Verfahren zu dessen Herstellung - Google Patents

Diffusionstransistor und Verfahren zu dessen Herstellung

Info

Publication number
DE1118888B
DE1118888B DEN18131A DEN0018131A DE1118888B DE 1118888 B DE1118888 B DE 1118888B DE N18131 A DEN18131 A DE N18131A DE N0018131 A DEN0018131 A DE N0018131A DE 1118888 B DE1118888 B DE 1118888B
Authority
DE
Germany
Prior art keywords
collector
zone
collector zone
bombardment
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DEN18131A
Other languages
German (de)
English (en)
Other versions
DE1118888C2 (US07118763-20061010-C00002.png
Inventor
Julian Robert Anthony Beale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1118888B publication Critical patent/DE1118888B/de
Application granted granted Critical
Publication of DE1118888C2 publication Critical patent/DE1118888C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
DEN18131A 1959-04-10 1960-04-06 Diffusionstransistor und Verfahren zu dessen Herstellung Granted DE1118888B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB12229/59A GB919211A (en) 1959-04-10 1959-04-10 Improvements in and relating to semi-conductor devices

Publications (2)

Publication Number Publication Date
DE1118888B true DE1118888B (de) 1961-12-07
DE1118888C2 DE1118888C2 (US07118763-20061010-C00002.png) 1962-06-28

Family

ID=10000727

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN18131A Granted DE1118888B (de) 1959-04-10 1960-04-06 Diffusionstransistor und Verfahren zu dessen Herstellung

Country Status (5)

Country Link
CH (1) CH381328A (US07118763-20061010-C00002.png)
DE (1) DE1118888B (US07118763-20061010-C00002.png)
FR (1) FR1253756A (US07118763-20061010-C00002.png)
GB (1) GB919211A (US07118763-20061010-C00002.png)
NL (1) NL250075A (US07118763-20061010-C00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1240198B (de) * 1963-06-04 1967-05-11 Sperry Rand Corp Elektronisches Duennschichtbauelement

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
AT194909B (de) * 1955-03-23 1958-01-25 Western Electric Co Verfahren zur Vorbehandlung eines Halbleiterkörpers für eine Halbleitereinrichtung und danach erhaltene Halbleiterkörper

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
AT194909B (de) * 1955-03-23 1958-01-25 Western Electric Co Verfahren zur Vorbehandlung eines Halbleiterkörpers für eine Halbleitereinrichtung und danach erhaltene Halbleiterkörper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1240198B (de) * 1963-06-04 1967-05-11 Sperry Rand Corp Elektronisches Duennschichtbauelement

Also Published As

Publication number Publication date
GB919211A (en) 1963-02-20
FR1253756A (fr) 1961-02-10
CH381328A (de) 1964-08-31
DE1118888C2 (US07118763-20061010-C00002.png) 1962-06-28
NL250075A (US07118763-20061010-C00002.png) 1900-01-01

Similar Documents

Publication Publication Date Title
DE19803490C2 (de) Abscheidevorrichtung
DE966492C (de) Elektrisch steuerbares Schaltelement aus Halbleitermaterial
DE3223432C2 (de) Verfahren zum Beseitigen von Kurz- oder Nebenschlüssen des Halbleiterkörpers einer Solarzelle
DE1092131B (de) Transistor und Verfahren zu dessen Herstellung
DE1080696B (de) Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
DE2142146A1 (de) Halbleiteranordnung und Verfahren zur Herstellung einer derartigen Anordnung
DE874936C (de) Transister fuer Stromverstaerkung
DE1130522B (de) Flaechentransistor mit anlegierten Emitter- und Kollektorelektroden und Legierungs-verfahren zu seiner Herstellung
DE1018555B (de) Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere einer Kristalldiode oder eines Transistors, deren halbleitender Koerper mit wenigstens einer aufgeschmolzenen Elektrode versehen ist
DE1521414C3 (de) Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage
DE1150456B (de) Esaki-Diode und Verfahren zu ihrer Herstellung
DE1090770B (de) Verfahren zur Herstellung einer Halbleiteranordnung mit nahe nebeneinander liegenden aufgeschmolzenen Elektroden
DE1118888B (de) Diffusionstransistor und Verfahren zu dessen Herstellung
DE919303C (de) Kristallgleichrichter
AT221585B (de) Diffusionstransistor und Verfahren zu dessen Herstellung
DE1217502B (de) Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen
DE1227562B (de) Verfahren zum Herstellen von Tunneldioden nach Esaki fuer hohe Frequenzen mit kleinerPN-UEbergangsflaeche und nach diesem Verfahren hergestellte Tunneldioden
DE1137078B (de) Halbleitervorrichtung mit mehreren stabilen Halbleiterelementen
DE1295695B (de) Steuerbares Halbleiterbauelement mit vier aufeinanderfolgenden Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps
DE1252809B (de) Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen
DE1295089B (de) Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors
DE1253825B (de) Verfahren zum Herstellen eines Halbleiterbauelements mit einem Halbleiterkoerper aus Galliumarsenid durch AEtzen
AT206937B (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
AT210476B (de) Halbleitervorrichtung
DE1105069B (de) AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung