DE1092131B - Transistor und Verfahren zu dessen Herstellung - Google Patents

Transistor und Verfahren zu dessen Herstellung

Info

Publication number
DE1092131B
DE1092131B DEN14032A DEN0014032A DE1092131B DE 1092131 B DE1092131 B DE 1092131B DE N14032 A DEN14032 A DE N14032A DE N0014032 A DEN0014032 A DE N0014032A DE 1092131 B DE1092131 B DE 1092131B
Authority
DE
Germany
Prior art keywords
emitter
collector
contact electrode
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN14032A
Other languages
German (de)
English (en)
Inventor
Leonard Johan Tummers
Jan Adrianus Maintveld
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1092131B publication Critical patent/DE1092131B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)
  • Logic Circuits (AREA)
  • Pulse Circuits (AREA)
  • Electronic Switches (AREA)
DEN14032A 1956-08-24 1957-08-20 Transistor und Verfahren zu dessen Herstellung Pending DE1092131B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL210117 1956-08-24
NL218102 1957-06-13

Publications (1)

Publication Number Publication Date
DE1092131B true DE1092131B (de) 1960-11-03

Family

ID=26641607

Family Applications (2)

Application Number Title Priority Date Filing Date
DEN14032A Pending DE1092131B (de) 1956-08-24 1957-08-20 Transistor und Verfahren zu dessen Herstellung
DEN15193A Pending DE1136371B (de) 1956-08-24 1958-06-10 Elektronische Speicherschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEN15193A Pending DE1136371B (de) 1956-08-24 1958-06-10 Elektronische Speicherschaltung

Country Status (7)

Country Link
US (2) US3081418A (en:Method)
BE (1) BE560244A (en:Method)
CH (1) CH365803A (en:Method)
DE (2) DE1092131B (en:Method)
FR (2) FR1200738A (en:Method)
GB (2) GB879649A (en:Method)
NL (3) NL106110C (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1191493B (de) * 1961-11-25 1965-04-22 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements mit einer durch eine einen geschlossenen Linienzug bildende Vertiefung in zwei Teile geteilten Zone
DE1209661B (de) * 1963-03-13 1966-01-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB921367A (en) * 1959-04-06 1963-03-20 Standard Telephones Cables Ltd Semiconductor device and method of manufacture
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
NL121714C (en:Method) * 1959-12-14
US3192141A (en) * 1959-12-24 1965-06-29 Western Electric Co Simultaneous etching and monitoring of semiconductor bodies
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE1171537B (de) * 1960-04-02 1964-06-04 Telefunken Patent Verfahren zur Herstellung einer Halbleiterdiode
NL265468A (en:Method) * 1960-05-18
US3196094A (en) * 1960-06-13 1965-07-20 Ibm Method of automatically etching an esaki diode
US3168649A (en) * 1960-08-05 1965-02-02 Bell Telephone Labor Inc Shift register employing bistable multiregion semiconductive devices
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode
US3211911A (en) * 1962-09-11 1965-10-12 Justin M Ruhge Method and photocell device for obtaining light source position data
US3349252A (en) * 1964-03-16 1967-10-24 Automatic Elect Lab Minority carrier storage flip-flop
DE1439442A1 (de) * 1964-09-12 1968-12-05 Siemens Ag Halbleiterstromtor vom pnpn-Typ
DE1496870A1 (de) * 1964-10-01 1970-01-08 Hitachi Ltd Verfahren zur Herstellung einer Halbleiteranordnung
US3443102A (en) * 1964-10-28 1969-05-06 Electro Optical Systems Inc Semiconductor photocell detector with variable spectral response
US3418226A (en) * 1965-05-18 1968-12-24 Ibm Method of electrolytically etching a semiconductor having a single impurity gradient
US3430109A (en) * 1965-09-28 1969-02-25 Chou H Li Solid-state device with differentially expanded junction surface
NL6607800A (en:Method) * 1966-06-04 1967-12-05
US3408275A (en) * 1966-12-09 1968-10-29 Siemens Ag Tunnel diodes wherein the height of the reduced cross section of the mesa is minimized and process of making
DE2332144C3 (de) * 1973-06-25 1981-06-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Transistor und Verfahren zu seiner Herstellung
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device
US9062197B2 (en) 2009-03-27 2015-06-23 Eastman Chemical Company Polyester blends

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520597A (en:Method) * 1952-06-13
BE520677A (en:Method) * 1950-09-29

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB763734A (en) * 1953-12-03 1956-12-19 Standard Telephones Cables Ltd Improvements in or relating to electrical circuits employing transistors
US2697269A (en) * 1950-07-24 1954-12-21 Bell Telephone Labor Inc Method of making semiconductor translating devices
NL222686A (en:Method) * 1950-11-28
NL91981C (en:Method) * 1951-08-24
US2644896A (en) * 1952-07-29 1953-07-07 Rca Corp Transistor bistable circuit
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
BE525428A (en:Method) * 1952-12-30
US2790034A (en) * 1953-03-05 1957-04-23 Bell Telephone Labor Inc Semiconductor signal translating devices
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2907934A (en) * 1953-08-12 1959-10-06 Gen Electric Non-linear resistance device
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
NL187666B (nl) * 1954-05-18 Blum Gmbh Julius Telescopische uittrekgeleiding voor schuifladen of dergelijke.
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
US2820153A (en) * 1954-10-25 1958-01-14 Rca Corp Electronic counter systems
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
US2757439A (en) * 1955-02-25 1956-08-07 Raytheon Mfg Co Transistor assemblies
BE546329A (en:Method) * 1955-04-20
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2842668A (en) * 1955-05-25 1958-07-08 Ibm High frequency transistor oscillator
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit
US2765986A (en) * 1955-07-11 1956-10-09 Cybertronic Corp Of America Photo-transistor control system
US2862115A (en) * 1955-07-13 1958-11-25 Bell Telephone Labor Inc Semiconductor circuit controlling devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520677A (en:Method) * 1950-09-29
BE520597A (en:Method) * 1952-06-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1191493B (de) * 1961-11-25 1965-04-22 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements mit einer durch eine einen geschlossenen Linienzug bildende Vertiefung in zwei Teile geteilten Zone
DE1209661B (de) * 1963-03-13 1966-01-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode

Also Published As

Publication number Publication date
FR1200738A (fr) 1959-12-23
US3047739A (en) 1962-07-31
GB879649A (en) 1961-10-11
CH365803A (de) 1962-11-30
BE560244A (en:Method)
NL218102A (en:Method)
NL210117A (en:Method)
US3081418A (en) 1963-03-12
GB879651A (en) 1961-10-11
DE1136371B (de) 1962-09-13
FR73723E (fr) 1960-09-05
NL106110C (en:Method)

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