BE520597A - - Google Patents

Info

Publication number
BE520597A
BE520597A BE520597DA BE520597A BE 520597 A BE520597 A BE 520597A BE 520597D A BE520597D A BE 520597DA BE 520597 A BE520597 A BE 520597A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE520597A publication Critical patent/BE520597A/xx

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/50—
BE520597D 1952-06-13 BE520597A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US293330A US3005132A (en) 1952-06-13 1952-06-13 Transistors

Publications (1)

Publication Number Publication Date
BE520597A true BE520597A (en:Method)

Family

ID=23128645

Family Applications (1)

Application Number Title Priority Date Filing Date
BE520597D BE520597A (en:Method) 1952-06-13

Country Status (6)

Country Link
US (1) US3005132A (en:Method)
BE (1) BE520597A (en:Method)
CH (1) CH320109A (en:Method)
FR (1) FR1080034A (en:Method)
GB (1) GB739294A (en:Method)
NL (2) NL113882C (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1092131B (de) * 1956-08-24 1960-11-03 Philips Nv Transistor und Verfahren zu dessen Herstellung

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
US2778980A (en) * 1954-08-30 1957-01-22 Gen Electric High power junction semiconductor device
US3087098A (en) * 1954-10-05 1963-04-23 Motorola Inc Transistor
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
US2762001A (en) * 1955-03-23 1956-09-04 Globe Union Inc Fused junction transistor assemblies
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
BE555973A (en:Method) * 1956-03-21
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
US3047733A (en) * 1957-03-12 1962-07-31 Ibm Multiple output semiconductor logical device
US2981874A (en) * 1957-05-31 1961-04-25 Ibm High speed, high current transistor
US3042565A (en) * 1959-01-02 1962-07-03 Sprague Electric Co Preparation of a moated mesa and related semiconducting devices
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
DE1208409B (de) * 1961-05-19 1966-01-05 Int Standard Electric Corp Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen
US3265943A (en) * 1962-08-03 1966-08-09 Sprague Electric Co Diffused collector transistor
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2563503A (en) * 1951-08-07 Transistor
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
NL84061C (en:Method) * 1948-06-26
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE495936A (en:Method) * 1949-10-11
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
BE537841A (en:Method) * 1954-05-03 1900-01-01
US2845374A (en) * 1955-05-23 1958-07-29 Texas Instruments Inc Semiconductor unit and method of making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1092131B (de) * 1956-08-24 1960-11-03 Philips Nv Transistor und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
US3005132A (en) 1961-10-17
NL113882C (en:Method)
NL179061C (nl)
FR1080034A (fr) 1954-12-06
GB739294A (en) 1955-10-26
CH320109A (de) 1957-03-15

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