DE1052563B - Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen - Google Patents
Anordnung und Herstellungsverfahren fuer Injektions-ElektrolumineszenzlampenInfo
- Publication number
- DE1052563B DE1052563B DEF22496A DEF0022496A DE1052563B DE 1052563 B DE1052563 B DE 1052563B DE F22496 A DEF22496 A DE F22496A DE F0022496 A DEF0022496 A DE F0022496A DE 1052563 B DE1052563 B DE 1052563B
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- crystals
- injection
- lamp according
- electroluminescent lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 title claims description 12
- 239000007924 injection Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims description 81
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 8
- 230000006798 recombination Effects 0.000 claims description 8
- 238000005215 recombination Methods 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 18
- 229910052984 zinc sulfide Inorganic materials 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 7
- 239000000155 melt Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000005083 Zinc sulfide Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- -1 hydrogen compound Chemical class 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000003125 aqueous solvent Substances 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XEHUYCFKGDBCDL-UHFFFAOYSA-N S(=O)(=O)(O)[Se]S(=O)(=O)O.[Zn] Chemical compound S(=O)(=O)(O)[Se]S(=O)(=O)O.[Zn] XEHUYCFKGDBCDL-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000003197 gene knockdown Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- VQYKQHDWCVUGBB-UHFFFAOYSA-N phosphanylidynezirconium Chemical compound [Zr]#P VQYKQHDWCVUGBB-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical group [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF22496A DE1052563B (de) | 1957-03-05 | 1957-03-05 | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF22496A DE1052563B (de) | 1957-03-05 | 1957-03-05 | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1052563B true DE1052563B (de) | 1959-03-12 |
| DE1052563C2 DE1052563C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1961-05-25 |
Family
ID=7090466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEF22496A Granted DE1052563B (de) | 1957-03-05 | 1957-03-05 | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1052563B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1144846B (de) | 1960-04-14 | 1963-03-07 | Gen Electric | Verfahren zur Herstellung und zur Erhoehung der Oberflaechenleitfaehigkeit elektrisch leitender Filme sowie zur schichtweisen AEnderung des Leitungstyps fuer n- und p-Schichten, insbesondere fuer elektrolumineszente Flaechenlampen und Photozellen |
| DE1156506B (de) * | 1959-11-20 | 1963-10-31 | Int Standard Electric Corp | Steuerbare elektrolumineszente Halbleiterlichtquelle |
| DE1183599B (de) * | 1962-10-15 | 1964-12-17 | Ibm | Optischer Sender oder Verstaerker unter unmittelbarer Umwandlung von elektrischer Energie in kohaerente Lichtenergie unter Verwendung eines einkristallinen Halbleiters, der zur selektiven Fluoreszenz angeregt wird |
| DE1191040B (de) * | 1962-10-30 | 1965-04-15 | Ibm | Optischer Sender oder Verstaerker mit Halbleiterdiode, die einen in Flussrichtung belasteten PN-UEbergang zur Injektion von Ladungstraegern aufweist |
| DE1194493B (de) * | 1962-02-09 | 1965-06-10 | Telefunken Patent | Belagfreie Flaechenelektrode fuer eine pn-Elektrolumineszenzlichtquelle |
| DE1194976B (de) | 1963-02-25 | 1965-06-16 | Siemens Ag | Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich |
| DE1212635B (de) | 1964-03-25 | 1966-03-17 | Licentia Gmbh | Optischer Sender mit einem Halbleitermedium |
| DE1217499B (de) * | 1964-02-21 | 1966-05-26 | Philips Nv | Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung |
| DE1219121B (de) | 1963-02-25 | 1966-06-16 | Rca Corp | Elektrolumineszente Halbleiter-Leuchtflaeche |
| DE1220950B (de) | 1963-12-31 | 1966-07-14 | Ibm | Optischer Sender oder Verstaerker mit einer in Durchlassrichtung vorgespannten Halbleiterdiode |
| DE1231353B (de) * | 1963-11-26 | 1966-12-29 | Ibm | Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer Herstellung |
| DE1236687B (de) * | 1962-01-10 | 1967-03-16 | Varian Associates | Optischer Sender oder Verstaerker fuer phasenkohaerente Strahlung |
| DE1274232B (de) * | 1966-07-15 | 1968-08-01 | Ibm | Verfahren zum Herstellen von als Rekombinationsstrahler wirksamen Halbleiterbauteilen |
| DE1276817B (de) * | 1966-02-15 | 1968-09-05 | Siemens Ag | Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute |
| DE1278003B (de) * | 1963-08-16 | 1968-09-19 | Varian Associates | Elektrolumineszente Halbleiterdiode fuer optische Sender oder Verstaerker |
| DE1282807B (de) * | 1959-08-06 | 1968-11-14 | Thorn Electrical Ind Ltd | Bildspeicher |
| DE1283412B (de) * | 1964-02-26 | 1968-11-21 | Licentia Gmbh | Optischer Halbleiterdioden-Sender |
| DE1297230B (de) * | 1963-12-13 | 1969-06-12 | Itt Industriesgmbh Deutsche | Halbleiterdiode mit lichtaussendendem pn-UEbergang |
-
1957
- 1957-03-05 DE DEF22496A patent/DE1052563B/de active Granted
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1282807C2 (de) * | 1959-08-06 | 1969-07-10 | Thorn Electrical Ind Ltd | Bildspeicher |
| DE1282807B (de) * | 1959-08-06 | 1968-11-14 | Thorn Electrical Ind Ltd | Bildspeicher |
| DE1156506B (de) * | 1959-11-20 | 1963-10-31 | Int Standard Electric Corp | Steuerbare elektrolumineszente Halbleiterlichtquelle |
| DE1144846B (de) | 1960-04-14 | 1963-03-07 | Gen Electric | Verfahren zur Herstellung und zur Erhoehung der Oberflaechenleitfaehigkeit elektrisch leitender Filme sowie zur schichtweisen AEnderung des Leitungstyps fuer n- und p-Schichten, insbesondere fuer elektrolumineszente Flaechenlampen und Photozellen |
| DE1236687B (de) * | 1962-01-10 | 1967-03-16 | Varian Associates | Optischer Sender oder Verstaerker fuer phasenkohaerente Strahlung |
| DE1194493B (de) * | 1962-02-09 | 1965-06-10 | Telefunken Patent | Belagfreie Flaechenelektrode fuer eine pn-Elektrolumineszenzlichtquelle |
| DE1183599B (de) * | 1962-10-15 | 1964-12-17 | Ibm | Optischer Sender oder Verstaerker unter unmittelbarer Umwandlung von elektrischer Energie in kohaerente Lichtenergie unter Verwendung eines einkristallinen Halbleiters, der zur selektiven Fluoreszenz angeregt wird |
| DE1191040B (de) * | 1962-10-30 | 1965-04-15 | Ibm | Optischer Sender oder Verstaerker mit Halbleiterdiode, die einen in Flussrichtung belasteten PN-UEbergang zur Injektion von Ladungstraegern aufweist |
| DE1219121B (de) | 1963-02-25 | 1966-06-16 | Rca Corp | Elektrolumineszente Halbleiter-Leuchtflaeche |
| DE1194976B (de) | 1963-02-25 | 1965-06-16 | Siemens Ag | Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich |
| DE1278003B (de) * | 1963-08-16 | 1968-09-19 | Varian Associates | Elektrolumineszente Halbleiterdiode fuer optische Sender oder Verstaerker |
| DE1231353B (de) * | 1963-11-26 | 1966-12-29 | Ibm | Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer Herstellung |
| DE1297230B (de) * | 1963-12-13 | 1969-06-12 | Itt Industriesgmbh Deutsche | Halbleiterdiode mit lichtaussendendem pn-UEbergang |
| DE1220950B (de) | 1963-12-31 | 1966-07-14 | Ibm | Optischer Sender oder Verstaerker mit einer in Durchlassrichtung vorgespannten Halbleiterdiode |
| DE1217499B (de) * | 1964-02-21 | 1966-05-26 | Philips Nv | Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung |
| DE1283412B (de) * | 1964-02-26 | 1968-11-21 | Licentia Gmbh | Optischer Halbleiterdioden-Sender |
| DE1212635B (de) | 1964-03-25 | 1966-03-17 | Licentia Gmbh | Optischer Sender mit einem Halbleitermedium |
| DE1276817B (de) * | 1966-02-15 | 1968-09-05 | Siemens Ag | Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute |
| DE1274232B (de) * | 1966-07-15 | 1968-08-01 | Ibm | Verfahren zum Herstellen von als Rekombinationsstrahler wirksamen Halbleiterbauteilen |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1052563C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1961-05-25 |
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| Publication | Publication Date | Title |
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