DE10392975T5 - Modell- und Parameterauswahl für die optische Metrologie - Google Patents

Modell- und Parameterauswahl für die optische Metrologie Download PDF

Info

Publication number
DE10392975T5
DE10392975T5 DE10392975T DE10392975T DE10392975T5 DE 10392975 T5 DE10392975 T5 DE 10392975T5 DE 10392975 T DE10392975 T DE 10392975T DE 10392975 T DE10392975 T DE 10392975T DE 10392975 T5 DE10392975 T5 DE 10392975T5
Authority
DE
Germany
Prior art keywords
parameters
optimization
profile
profile model
parameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10392975T
Other languages
German (de)
English (en)
Inventor
Vi Fremont Voung
Emmanuel San Jose Drege
Junwei Fremont Bao
Srinivas Fremont Doddi
Xinhui Los Altos Niu
Nickhil Los Altos Jakatdar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Timbre Technologies Inc
Original Assignee
TEL Timbre Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Timbre Technologies Inc filed Critical TEL Timbre Technologies Inc
Publication of DE10392975T5 publication Critical patent/DE10392975T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE10392975T 2002-07-25 2003-07-25 Modell- und Parameterauswahl für die optische Metrologie Withdrawn DE10392975T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/206,491 US7330279B2 (en) 2002-07-25 2002-07-25 Model and parameter selection for optical metrology
US10/206,491 2002-07-25
PCT/US2003/023281 WO2004013723A2 (en) 2002-07-25 2003-07-25 Model and parameter selection for optical metrology

Publications (1)

Publication Number Publication Date
DE10392975T5 true DE10392975T5 (de) 2006-01-19

Family

ID=30770300

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10392975T Withdrawn DE10392975T5 (de) 2002-07-25 2003-07-25 Modell- und Parameterauswahl für die optische Metrologie

Country Status (8)

Country Link
US (2) US7330279B2 (https=)
JP (2) JP2005534192A (https=)
KR (1) KR101281212B1 (https=)
CN (1) CN1310011C (https=)
AU (1) AU2003254170A1 (https=)
DE (1) DE10392975T5 (https=)
TW (1) TWI238884B (https=)
WO (1) WO2004013723A2 (https=)

Families Citing this family (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US20040087042A1 (en) * 2002-08-12 2004-05-06 Bruno Ghyselen Method and apparatus for adjusting the thickness of a layer of semiconductor material
US6842261B2 (en) * 2002-08-26 2005-01-11 Timbre Technologies, Inc. Integrated circuit profile value determination
US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
US6867862B2 (en) * 2002-11-20 2005-03-15 Mehrdad Nikoonahad System and method for characterizing three-dimensional structures
US20040181768A1 (en) * 2003-03-12 2004-09-16 Krukar Richard H. Model pattern simulation of semiconductor wafer processing steps
US7394554B2 (en) * 2003-09-15 2008-07-01 Timbre Technologies, Inc. Selecting a hypothetical profile to use in optical metrology
US20050231731A1 (en) * 2004-02-18 2005-10-20 The Usa As Represented By The Administrator Of The National Aeronautics And Space Administration Systems and methods for fabricating thin films
US7523076B2 (en) * 2004-03-01 2009-04-21 Tokyo Electron Limited Selecting a profile model for use in optical metrology using a machine learning system
FR2867588B1 (fr) * 2004-03-12 2006-04-28 Commissariat Energie Atomique Procede de caracterisation geometrique de structures et dispositif pour la mise en oeuvre dudit procede
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US7065423B2 (en) * 2004-07-08 2006-06-20 Timbre Technologies, Inc. Optical metrology model optimization for process control
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7566181B2 (en) * 2004-09-01 2009-07-28 Tokyo Electron Limited Controlling critical dimensions of structures formed on a wafer in semiconductor processing
US7171284B2 (en) 2004-09-21 2007-01-30 Timbre Technologies, Inc. Optical metrology model optimization based on goals
US7280229B2 (en) * 2004-12-03 2007-10-09 Timbre Technologies, Inc. Examining a structure formed on a semiconductor wafer using machine learning systems
US7483133B2 (en) * 2004-12-09 2009-01-27 Kla-Tencor Technologies Corporation. Multiple angle of incidence spectroscopic scatterometer system
US20070091325A1 (en) * 2005-01-07 2007-04-26 Mehrdad Nikoonahad Multi-channel optical metrology
US20060187466A1 (en) * 2005-02-18 2006-08-24 Timbre Technologies, Inc. Selecting unit cell configuration for repeating structures in optical metrology
US7421414B2 (en) * 2005-03-31 2008-09-02 Timbre Technologies, Inc. Split machine learning systems
US7496865B2 (en) * 2005-05-20 2009-02-24 Chung Yuan Christian University OTA-based high-order filters
US7649614B2 (en) * 2005-06-10 2010-01-19 Asml Netherlands B.V. Method of characterization, method of characterizing a process operation, and device manufacturing method
US7355728B2 (en) * 2005-06-16 2008-04-08 Timbre Technologies, Inc. Optical metrology model optimization for repetitive structures
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
US7523021B2 (en) * 2006-03-08 2009-04-21 Tokyo Electron Limited Weighting function to enhance measured diffraction signals in optical metrology
US7428060B2 (en) * 2006-03-24 2008-09-23 Timbre Technologies, Inc. Optimization of diffraction order selection for two-dimensional structures
US7623978B2 (en) * 2006-03-30 2009-11-24 Tokyo Electron Limited Damage assessment of a wafer using optical metrology
US7619731B2 (en) * 2006-03-30 2009-11-17 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
US7444196B2 (en) * 2006-04-21 2008-10-28 Timbre Technologies, Inc. Optimized characterization of wafers structures for optical metrology
US7818151B2 (en) * 2006-05-02 2010-10-19 Asml Masktools B.V. Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
US7495781B2 (en) * 2006-07-10 2009-02-24 Tokyo Electron Limited Optimizing selected variables of an optical metrology model
US7526354B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
US7525673B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Optimizing selected variables of an optical metrology system
US7469192B2 (en) * 2006-07-11 2008-12-23 Tokyo Electron Ltd. Parallel profile determination for an optical metrology system
US7515283B2 (en) * 2006-07-11 2009-04-07 Tokyo Electron, Ltd. Parallel profile determination in optical metrology
US7742888B2 (en) * 2006-07-25 2010-06-22 Tokyo Electron Limited Allocating processing units to generate simulated diffraction signals used in optical metrology
US7765076B2 (en) * 2006-09-22 2010-07-27 Tokyo Electron Limited Allocating processing units to processing clusters to generate simulated diffraction signals
US20080074677A1 (en) * 2006-09-26 2008-03-27 Tokyo Electron Limited accuracy of optical metrology measurements
US20080074678A1 (en) * 2006-09-26 2008-03-27 Tokyo Electron Limited Accuracy of optical metrology measurements
US7763404B2 (en) * 2006-09-26 2010-07-27 Tokyo Electron Limited Methods and apparatus for changing the optical properties of resists
US7300730B1 (en) 2006-09-26 2007-11-27 Tokyo Electron Limited Creating an optically tunable anti-reflective coating
US7555395B2 (en) * 2006-09-26 2009-06-30 Tokyo Electron Limited Methods and apparatus for using an optically tunable soft mask to create a profile library
US20080076046A1 (en) * 2006-09-26 2008-03-27 Tokyo Electron Limited accuracy of optical metrology measurements
US7776748B2 (en) * 2006-09-29 2010-08-17 Tokyo Electron Limited Selective-redeposition structures for calibrating a plasma process
US7749398B2 (en) * 2006-09-29 2010-07-06 Tokyo Electron Limited Selective-redeposition sources for calibrating a plasma process
US8045786B2 (en) 2006-10-24 2011-10-25 Kla-Tencor Technologies Corp. Waferless recipe optimization
US7522295B2 (en) * 2006-11-07 2009-04-21 Tokyo Electron Limited Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer
US7417750B2 (en) * 2006-11-07 2008-08-26 Tokyo Electron Limited Consecutive measurement of structures formed on a semiconductor wafer using an angle-resolved spectroscopic scatterometer
US8798966B1 (en) * 2007-01-03 2014-08-05 Kla-Tencor Corporation Measuring critical dimensions of a semiconductor structure
US7916927B2 (en) * 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7571074B2 (en) * 2007-01-30 2009-08-04 Tokyo Electron Limited Method of using a wafer-thickness-dependant profile library
US7451054B2 (en) * 2007-01-30 2008-11-11 Tokyo Electron Limited Method of using a wafer-temperature-dependent profile library
US7639351B2 (en) * 2007-03-20 2009-12-29 Tokyo Electron Limited Automated process control using optical metrology with a photonic nanojet
US7567353B2 (en) * 2007-03-28 2009-07-28 Tokyo Electron Limited Automated process control using optical metrology and photoresist parameters
US7949618B2 (en) * 2007-03-28 2011-05-24 Tokyo Electron Limited Training a machine learning system to determine photoresist parameters
US7483809B2 (en) * 2007-04-12 2009-01-27 Tokyo Electron Limited Optical metrology using support vector machine with profile parameter inputs
US7372583B1 (en) 2007-04-12 2008-05-13 Tokyo Electron Limited Controlling a fabrication tool using support vector machine
US7511835B2 (en) * 2007-04-12 2009-03-31 Tokyo Electron Limited Optical metrology using a support vector machine with simulated diffraction signal inputs
KR101437583B1 (ko) * 2007-07-03 2014-09-12 삼성전자주식회사 리소그라피 장치 및 리소그라피 방법
KR101461667B1 (ko) * 2007-07-26 2014-11-13 도쿄엘렉트론가부시키가이샤 패턴화 구조 검사 장치 및 계측 데이터 관리 방법
KR101357326B1 (ko) * 2007-07-26 2014-02-03 도쿄엘렉트론가부시키가이샤 패턴화 구조 검사 시스템
CN101359612B (zh) * 2007-07-30 2012-07-04 东京毅力科创株式会社 晶片图案结构的检查装置及其计量数据管理方法
US7729873B2 (en) * 2007-08-28 2010-06-01 Tokyo Electron Limited Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology
US7627392B2 (en) * 2007-08-30 2009-12-01 Tokyo Electron Limited Automated process control using parameters determined with approximation and fine diffraction models
US7949490B2 (en) * 2007-08-30 2011-05-24 Tokyo Electron Limited Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology
US8069020B2 (en) * 2007-09-19 2011-11-29 Tokyo Electron Limited Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
US7912679B2 (en) * 2007-09-20 2011-03-22 Tokyo Electron Limited Determining profile parameters of a structure formed on a semiconductor wafer using a dispersion function relating process parameter to dispersion
NL1036018A1 (nl) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
JP2009129390A (ja) * 2007-11-28 2009-06-11 Oki Electric Ind Co Ltd 媒体鑑別装置
US8760649B1 (en) * 2008-01-28 2014-06-24 Kla-Tencor Corporation Model-based metrology using tesselation-based discretization
US8450331B2 (en) * 2008-04-22 2013-05-28 Merck Sharp & Dohme Corp. Thiophenyl-substituted 2-imino-3-methyl pyrrolo pyrimidinone compounds as BACE-1 inhibitors, compositions, and their use
US8090558B1 (en) 2008-06-09 2012-01-03 Kla-Tencor Corporation Optical parametric model optimization
US8612045B2 (en) * 2008-12-24 2013-12-17 Asml Holding N.V. Optimization method and a lithographic cell
US8024676B2 (en) * 2009-02-13 2011-09-20 Tokyo Electron Limited Multi-pitch scatterometry targets
US8183062B2 (en) * 2009-02-24 2012-05-22 Tokyo Electron Limited Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences
NL2005523A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
US9523800B2 (en) * 2010-05-21 2016-12-20 Kla-Tencor Corporation Computation efficiency by iterative spatial harmonics order truncation
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
WO2011158239A1 (en) * 2010-06-17 2011-12-22 Nova Measuring Instruments Ltd. Method and system for optimizing optical inspection of patterned structures
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
NL2007577A (en) * 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization of source, mask and projection optics.
US20130110477A1 (en) * 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology
JP5938201B2 (ja) * 2011-12-06 2016-06-22 キヤノン株式会社 位置姿勢計測装置、その処理方法及びプログラム
JP5660026B2 (ja) * 2011-12-28 2015-01-28 信越半導体株式会社 膜厚分布測定方法
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
JP6049052B2 (ja) * 2012-07-20 2016-12-21 株式会社日立ハイテクノロジーズ ウエハ外観検査装置及びウエハ外観検査装置における感度しきい値設定方法
CN103811379B (zh) * 2012-11-01 2016-12-28 台湾积体电路制造股份有限公司 工具优化调节系统和相关方法
US10769320B2 (en) * 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9519285B2 (en) 2013-01-23 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and associated methods for tuning processing tools
AU2013388966B2 (en) 2013-05-07 2017-06-01 Halliburton Energy Services, Inc. Optical sensor optimization and system implementation with simplified layer structure
US9518932B2 (en) * 2013-11-06 2016-12-13 Kla-Tencor Corp. Metrology optimized inspection
JP6509225B2 (ja) * 2013-12-11 2019-05-08 ケーエルエー−テンカー コーポレイション 要件に対するターゲット及びプロセス感度の分析
US10671923B2 (en) 2013-12-20 2020-06-02 Gemtrex Inc. Genetic method for the tracking of time varying signals
JP6211194B2 (ja) 2014-07-11 2017-10-11 株式会社日立製作所 シミュレーションシステム、及び、シミュレーション方法
CN105571484B (zh) * 2014-10-14 2018-07-06 睿励科学仪器（上海）有限公司 确定测量模式和光学系统参数容差的方法和装置
CN105571483B (zh) * 2014-10-14 2018-06-26 睿励科学仪器（上海）有限公司 一种用于优化光学系统参数的方法和装置
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
US9948920B2 (en) * 2015-02-27 2018-04-17 Qualcomm Incorporated Systems and methods for error correction in structured light
US11814718B2 (en) * 2015-03-31 2023-11-14 Bühler Alzenau Gmbh Method for producing coated substrates
CN108292106B (zh) 2015-10-09 2021-05-25 Asml荷兰有限公司 用于检查及量测的方法和设备
DE102015221772A1 (de) * 2015-11-05 2017-05-11 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Charakterisierung eines durch wenigstens einen Lithographieschritt strukturierten Wafers
WO2017076702A2 (de) 2015-11-05 2017-05-11 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zur charakterisierung eines durch wenigstens einen lithographieschritt strukturierten wafers
CN107345788A (zh) * 2016-05-04 2017-11-14 中国科学院福建物质结构研究所 一种平行光微光斑光学关键尺寸分析装置及检测方法
US10146036B2 (en) 2016-06-07 2018-12-04 Globalfoundries Inc. Semiconductor wafer inspection using care area group-specific threshold settings for detecting defects
US10458912B2 (en) * 2016-08-31 2019-10-29 Kla-Tencor Corporation Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
KR101885619B1 (ko) * 2016-12-29 2018-08-06 한국과학기술원 출구 재귀 모델을 이용한 웨이퍼 제조 공정 레벨의 포토리소그래피 클러스터 장치 시뮬레이션을 제공하는 시뮬레이션 장치 및 이를 이용한 시뮬레이션 방법
US10580673B2 (en) * 2018-01-05 2020-03-03 Kla Corporation Semiconductor metrology and defect classification using electron microscopy
US11562289B2 (en) * 2018-12-06 2023-01-24 Kla Corporation Loosely-coupled inspection and metrology system for high-volume production process monitoring
US11480868B2 (en) 2019-03-22 2022-10-25 International Business Machines Corporation Determination of optical roughness in EUV structures
WO2021175533A1 (en) * 2020-03-06 2021-09-10 Asml Netherlands B.V. Methods of modelling systems for performing predictive maintenance of systems, such as lithographic systems
JP7475905B2 (ja) * 2020-03-12 2024-04-30 キオクシア株式会社 形状算出プログラム、形状算出方法、及び形状算出装置
US12406197B2 (en) * 2020-10-28 2025-09-02 Kla Corporation Prediction and metrology of stochastic photoresist thickness defects
DE102021201806A1 (de) * 2021-02-25 2022-09-08 Trumpf Laser Gmbh Verfahren und Vorrichtung zum Bestimmen eines optimierten Parametersatzes zum Durchführen einer Messung
US12543540B2 (en) * 2021-04-30 2026-02-03 Kla Corporation High resolution profile measurement based on a trained parameter conditioned measurement model
KR102921323B1 (ko) 2021-06-10 2026-02-03 삼성전자주식회사 공정 변화도를 모니터링 하는 방법
JP7600046B2 (ja) * 2021-07-13 2024-12-16 キオクシア株式会社 形状計測方法、形状計測装置、及びプログラム
US20230169255A1 (en) 2021-12-01 2023-06-01 Kla Corporation Methods And Systems For Data Driven Parameterization And Measurement Of Semiconductor Structures
US12507091B2 (en) * 2022-11-14 2025-12-23 Rakuten Symphony, Inc. Testing in 5G SA communication network

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326659A (en) * 1992-03-05 1994-07-05 Regents Of The University Of California Method for making masks
GB9226552D0 (en) * 1992-12-21 1993-02-17 Philips Electronics Uk Ltd A method of determining a given characteristic of a material sample
US5719796A (en) * 1995-12-04 1998-02-17 Advanced Micro Devices, Inc. System for monitoring and analyzing manufacturing processes using statistical simulation with single step feedback
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
JP3535390B2 (ja) * 1998-09-03 2004-06-07 株式会社東芝 露光マスクの検査方法および測長箇所を探索するプログラムを記録した記録媒体
US6532428B1 (en) * 1999-10-07 2003-03-11 Advanced Micro Devices, Inc. Method and apparatus for automatic calibration of critical dimension metrology tool
US6470230B1 (en) * 2000-01-04 2002-10-22 Advanced Micro Devices, Inc. Supervisory method for determining optimal process targets based on product performance in microelectronic fabrication
CN1303397C (zh) * 2000-01-26 2007-03-07 音质技术公司 为集成电路周期性光栅产生仿真衍射信号库的方法及系统
US6748104B1 (en) * 2000-03-24 2004-06-08 Cognex Corporation Methods and apparatus for machine vision inspection using single and multiple templates or patterns
US6622059B1 (en) * 2000-04-13 2003-09-16 Advanced Micro Devices, Inc. Automated process monitoring and analysis system for semiconductor processing
US6943900B2 (en) * 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6768983B1 (en) * 2000-11-28 2004-07-27 Timbre Technologies, Inc. System and method for real-time library generation of grating profiles
US6636843B2 (en) * 2000-12-14 2003-10-21 Timbre Technologies, Inc. System and method for grating profile classification
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6704661B1 (en) * 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US6867866B1 (en) * 2001-08-10 2005-03-15 Therma-Wave, Inc. CD metrology analysis using green's function
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
US6954911B2 (en) * 2002-05-01 2005-10-11 Synopsys, Inc. Method and system for simulating resist and etch edges
US7216045B2 (en) * 2002-06-03 2007-05-08 Timbre Technologies, Inc. Selection of wavelengths for integrated circuit optical metrology
US7330279B2 (en) 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7092110B2 (en) * 2002-07-25 2006-08-15 Timbre Technologies, Inc. Optimized model and parameter selection for optical metrology
US7427521B2 (en) * 2002-10-17 2008-09-23 Timbre Technologies, Inc. Generating simulated diffraction signals for two-dimensional structures
US20040267397A1 (en) * 2003-06-27 2004-12-30 Srinivas Doddi Optical metrology of structures formed on semiconductor wafer using machine learning systems
US7394554B2 (en) * 2003-09-15 2008-07-01 Timbre Technologies, Inc. Selecting a hypothetical profile to use in optical metrology
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US7355728B2 (en) * 2005-06-16 2008-04-08 Timbre Technologies, Inc. Optical metrology model optimization for repetitive structures

Also Published As

Publication number Publication date
TWI238884B (en) 2005-09-01
JP2005534192A (ja) 2005-11-10
WO2004013723A2 (en) 2004-02-12
CN1310011C (zh) 2007-04-11
KR20050021549A (ko) 2005-03-07
TW200407527A (en) 2004-05-16
US7505153B2 (en) 2009-03-17
CN1672012A (zh) 2005-09-21
WO2004013723A3 (en) 2004-04-29
AU2003254170A8 (en) 2004-02-23
JP2012027032A (ja) 2012-02-09
AU2003254170A1 (en) 2004-02-23
KR101281212B1 (ko) 2013-07-02
US20080151269A1 (en) 2008-06-26
US20040017574A1 (en) 2004-01-29
JP5307862B2 (ja) 2013-10-02
US7330279B2 (en) 2008-02-12

Similar Documents

Publication Publication Date Title
DE10392975T5 (de) Modell- und Parameterauswahl für die optische Metrologie
US7092110B2 (en) Optimized model and parameter selection for optical metrology
US7126700B2 (en) Parametric optimization of optical metrology model
US7136796B2 (en) Generation and use of integrated circuit profile-based simulation information
KR101342847B1 (ko) 2 차원 구조물들에 대한 회절 차수의 선택 방법, 광학 계측 시스템의 최적화 방법 및 광학 계측 시스템
JP3774153B2 (ja) マクロ格子テストパターンプロファイルデータ取得システムおよび方法
DE60117286T2 (de) Prozesssteuerung
KR102145256B1 (ko) 검사와 계측을 위한 방법 및 장치
Niu et al. Specular spectroscopic scatterometry in DUV lithography
DE112004001001T5 (de) Optische Messung von auf Halbleiterwafern gebildeten Strukturen unter Verwendung von Maschinenlernsystemen
DE112017001846T5 (de) Halbleitermetrologie mit Information von mehreren Prozessschritten
JP2005534192A5 (https=)
DE102005056916B4 (de) Verfahren zum Gestalten einer Überlagerungs-Markierung
DE10393515T5 (de) Erzeugung von simulierten Beugungssignalen für zweidimensionale Strukturen
KR20130061688A (ko) 구조의 광계측을 위한 재료의 광학 특성을 결정하는 방법
US7542859B2 (en) Creating a virtual profile library
Fawzi et al. Analysis and detection of an incorrect profile shape in a classical scatterometric process
EP4441461B1 (de) Computer-generiertes hologramm (cgh), sowie verfahren zur auslegung eines cgh
DE10302868A1 (de) Verfahren zur Bestimmung von Strukturparametern einer Oberfläche
Hamasaki et al. Novel overlay correction by synchronizing scan speed to intra-die fingerprint on lithography scanner
CN121300006A (zh) 一种用于半导体制造的光刻套刻图形生成方法及系统
Burov Quadratic blur kernels for latent image formation modeling

Legal Events

Date Code Title Description
8141 Disposal/no request for examination