DE10323085A1 - CVD-Beschichtungsvorrichtung - Google Patents

CVD-Beschichtungsvorrichtung Download PDF

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Publication number
DE10323085A1
DE10323085A1 DE10323085A DE10323085A DE10323085A1 DE 10323085 A1 DE10323085 A1 DE 10323085A1 DE 10323085 A DE10323085 A DE 10323085A DE 10323085 A DE10323085 A DE 10323085A DE 10323085 A1 DE10323085 A1 DE 10323085A1
Authority
DE
Germany
Prior art keywords
plate
compensation
carrier plate
particular according
compensation plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10323085A
Other languages
German (de)
English (en)
Inventor
Johannes KÄPPELER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE10323085A priority Critical patent/DE10323085A1/de
Priority to JP2006530160A priority patent/JP4637844B2/ja
Priority to KR1020057020806A priority patent/KR101233502B1/ko
Priority to PCT/EP2004/050325 priority patent/WO2004104265A1/de
Priority to CN2004800129479A priority patent/CN1788107B/zh
Priority to EP04721543A priority patent/EP1625243B1/de
Priority to TW093110836A priority patent/TWI346716B/zh
Publication of DE10323085A1 publication Critical patent/DE10323085A1/de
Priority to US11/284,987 priority patent/US8152927B2/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE10323085A 2003-05-22 2003-05-22 CVD-Beschichtungsvorrichtung Withdrawn DE10323085A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE10323085A DE10323085A1 (de) 2003-05-22 2003-05-22 CVD-Beschichtungsvorrichtung
JP2006530160A JP4637844B2 (ja) 2003-05-22 2004-03-18 Ｃｖｄコーティング装置
KR1020057020806A KR101233502B1 (ko) 2003-05-22 2004-03-18 결정질층 증착장치
PCT/EP2004/050325 WO2004104265A1 (de) 2003-05-22 2004-03-18 Cvd-beschichtungsvorrichtung
CN2004800129479A CN1788107B (zh) 2003-05-22 2004-03-18 Cvd涂敷装置
EP04721543A EP1625243B1 (de) 2003-05-22 2004-03-18 Cvd-beschichtungsvorrichtung
TW093110836A TWI346716B (en) 2003-05-22 2004-04-19 Chemical vapor deposition device
US11/284,987 US8152927B2 (en) 2003-05-22 2005-11-22 CVD coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10323085A DE10323085A1 (de) 2003-05-22 2003-05-22 CVD-Beschichtungsvorrichtung

Publications (1)

Publication Number Publication Date
DE10323085A1 true DE10323085A1 (de) 2004-12-09

Family

ID=33441122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10323085A Withdrawn DE10323085A1 (de) 2003-05-22 2003-05-22 CVD-Beschichtungsvorrichtung

Country Status (8)

Country Link
US (1) US8152927B2 (ko)
EP (1) EP1625243B1 (ko)
JP (1) JP4637844B2 (ko)
KR (1) KR101233502B1 (ko)
CN (1) CN1788107B (ko)
DE (1) DE10323085A1 (ko)
TW (1) TWI346716B (ko)
WO (1) WO2004104265A1 (ko)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter
DE102007026348A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
DE102012106796A1 (de) * 2012-07-26 2014-01-30 Aixtron Se Thermische Behandlungsvorrichtung mit einem auf einem Substratträgersockel aufsetzbaren Substratträgerring
DE102012108986A1 (de) 2012-09-24 2014-03-27 Aixtron Se Substrathalter einer CVD-Vorrichtung
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
DE102014223301B3 (de) * 2014-11-14 2016-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
WO2018037014A1 (de) 2016-08-23 2018-03-01 Aixtron Se Suszeptor für einen cvd-reaktor
DE102019105913A1 (de) * 2019-03-08 2020-09-10 Aixtron Se Suszeptoranordnung eines CVD-Reaktors
WO2021144161A1 (de) * 2020-01-17 2021-07-22 Aixtron Se Cvd-reaktor mit doppelter vorlaufzonenplatte
DE102020117645A1 (de) 2020-07-03 2022-01-05 Aixtron Se Transportring für einen CVD-Reaktor
DE102020123326A1 (de) 2020-09-07 2022-03-10 Aixtron Se CVD-Reaktor mit temperierbarem Gaseinlassbereich

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
JP5566669B2 (ja) * 2009-11-19 2014-08-06 昭和電工株式会社 インライン式成膜装置及び磁気記録媒体の製造方法
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5409413B2 (ja) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
JP5613083B2 (ja) * 2011-02-28 2014-10-22 大陽日酸株式会社 サセプタカバー、該サセプタカバーを備えた気相成長装置
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
TWI506163B (zh) * 2012-07-13 2015-11-01 Epistar Corp 應用於氣相沉積的反應器及其承載裝置
CN103996643A (zh) * 2014-05-30 2014-08-20 沈阳拓荆科技有限公司 立柱式陶瓷环定位用销
JP6335683B2 (ja) * 2014-06-30 2018-05-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造装置
JP6478364B2 (ja) * 2015-04-09 2019-03-06 信越化学工業株式会社 被覆グラファイト部材及びこれと保持手段とのアセンブリ
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR102614741B1 (ko) * 2021-08-14 2023-12-14 램 리써치 코포레이션 반도체 제조 툴들에서 사용하기 위한 클록 가능한 (clockable) 기판 프로세싱 페데스탈

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3027934A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur einseitigen aetzung von halbleiterscheiben
JPH06310438A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6030509A (en) * 1998-04-06 2000-02-29 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for shielding a wafer holder
JP2001127142A (ja) * 1999-10-27 2001-05-11 Hitachi Kokusai Electric Inc 半導体製造装置
DE10043600B4 (de) * 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
JP2002146540A (ja) * 2000-11-14 2002-05-22 Ebara Corp 基板加熱装置
US20030209326A1 (en) * 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter
DE102007026348A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US8308867B2 (en) 2007-06-06 2012-11-13 Aixtron Inc. Device for the temperature control of the surface temperatures of substrates in a CVD reactor
DE102012106796A1 (de) * 2012-07-26 2014-01-30 Aixtron Se Thermische Behandlungsvorrichtung mit einem auf einem Substratträgersockel aufsetzbaren Substratträgerring
DE102012108986A1 (de) 2012-09-24 2014-03-27 Aixtron Se Substrathalter einer CVD-Vorrichtung
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
US10100433B2 (en) 2014-11-14 2018-10-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V Substrate holder, plasma reactor and method for depositing diamond
DE102014223301B3 (de) * 2014-11-14 2016-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
DE102014223301B8 (de) * 2014-11-14 2016-06-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
WO2018037014A1 (de) 2016-08-23 2018-03-01 Aixtron Se Suszeptor für einen cvd-reaktor
DE102016115614A1 (de) 2016-08-23 2018-03-01 Aixtron Se Suszeptor für einen CVD-Reaktor
US11168410B2 (en) 2016-08-23 2021-11-09 Aixtron Se Susceptor for a chemical vapour deposition reactor
US12110591B2 (en) 2019-03-08 2024-10-08 Aixtron Se Susceptor arrangement of a CVD reactor
DE102019105913A1 (de) * 2019-03-08 2020-09-10 Aixtron Se Suszeptoranordnung eines CVD-Reaktors
WO2020182495A1 (de) 2019-03-08 2020-09-17 Aixtron Se Suszeptoranordnung eines cvd-reaktors
WO2021144161A1 (de) * 2020-01-17 2021-07-22 Aixtron Se Cvd-reaktor mit doppelter vorlaufzonenplatte
WO2022002848A2 (de) 2020-07-03 2022-01-06 Aixtron Se Transportring für einen cvd-reaktor
DE102020117645A1 (de) 2020-07-03 2022-01-05 Aixtron Se Transportring für einen CVD-Reaktor
DE102020123326A1 (de) 2020-09-07 2022-03-10 Aixtron Se CVD-Reaktor mit temperierbarem Gaseinlassbereich
WO2022049063A2 (de) 2020-09-07 2022-03-10 Aixtron Se Cvd-reaktor mit temperierbarem gaseinlassbereich

Also Published As

Publication number Publication date
JP2007501329A (ja) 2007-01-25
EP1625243A1 (de) 2006-02-15
CN1788107A (zh) 2006-06-14
WO2004104265B1 (de) 2005-02-17
TWI346716B (en) 2011-08-11
EP1625243B1 (de) 2012-07-04
CN1788107B (zh) 2012-03-21
TW200502424A (en) 2005-01-16
JP4637844B2 (ja) 2011-02-23
KR101233502B1 (ko) 2013-02-14
KR20060019521A (ko) 2006-03-03
WO2004104265A1 (de) 2004-12-02
US20060112881A1 (en) 2006-06-01
US8152927B2 (en) 2012-04-10

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8127 New person/name/address of the applicant

Owner name: AIXTRON AG, 52134 HERZOGENRATH, DE

8110 Request for examination paragraph 44
R082 Change of representative

Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, 42

Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE

R081 Change of applicant/patentee

Owner name: AIXTRON SE, DE

Free format text: FORMER OWNER: AIXTRON AG, 52134 HERZOGENRATH, DE

Effective date: 20111104

R082 Change of representative

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Effective date: 20111104

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20131203