DE102018116927B4 - Nicht-flüchtige Speichervorrichtung einschließlich Speicherebenen und Betriebsverfahren davon - Google Patents

Nicht-flüchtige Speichervorrichtung einschließlich Speicherebenen und Betriebsverfahren davon Download PDF

Info

Publication number
DE102018116927B4
DE102018116927B4 DE102018116927.2A DE102018116927A DE102018116927B4 DE 102018116927 B4 DE102018116927 B4 DE 102018116927B4 DE 102018116927 A DE102018116927 A DE 102018116927A DE 102018116927 B4 DE102018116927 B4 DE 102018116927B4
Authority
DE
Germany
Prior art keywords
memory
planes
plane
control
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102018116927.2A
Other languages
German (de)
English (en)
Other versions
DE102018116927A1 (de
Inventor
Su-Chang Jeon
Sang-Won Park
Dong-Kyo Shim
Dong-Hun KWAK
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102018116927A1 publication Critical patent/DE102018116927A1/de
Application granted granted Critical
Publication of DE102018116927B4 publication Critical patent/DE102018116927B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0625—Power saving in storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
DE102018116927.2A 2017-10-12 2018-07-12 Nicht-flüchtige Speichervorrichtung einschließlich Speicherebenen und Betriebsverfahren davon Active DE102018116927B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0132752 2017-10-12
KR1020170132752A KR102631350B1 (ko) 2017-10-12 2017-10-12 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법

Publications (2)

Publication Number Publication Date
DE102018116927A1 DE102018116927A1 (de) 2019-04-18
DE102018116927B4 true DE102018116927B4 (de) 2024-11-28

Family

ID=65910381

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018116927.2A Active DE102018116927B4 (de) 2017-10-12 2018-07-12 Nicht-flüchtige Speichervorrichtung einschließlich Speicherebenen und Betriebsverfahren davon

Country Status (5)

Country Link
US (1) US10712955B2 (https=)
JP (1) JP7280027B2 (https=)
KR (1) KR102631350B1 (https=)
CN (1) CN109658967B (https=)
DE (1) DE102018116927B4 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102838205B1 (ko) * 2019-10-21 2025-07-25 삼성전자주식회사 플래시 메모리 장치 및 플래시 메모리 셀들을 포함하는 컴퓨팅 장치
US11270759B2 (en) 2019-10-21 2022-03-08 Samsung Electronics Co., Ltd. Flash memory device and computing device including flash memory cells
KR102916537B1 (ko) 2019-12-11 2026-01-22 에스케이하이닉스 주식회사 시스템, 컨트롤러 및 시스템의 동작 방법
US11056195B1 (en) * 2020-04-27 2021-07-06 Macronix International Co., Ltd. Nonvolatile memory device and related driving method
US11200001B2 (en) * 2020-05-15 2021-12-14 Micron Technology, Inc. Management of power during memory device reset and initialization
US11385810B2 (en) * 2020-06-30 2022-07-12 Sandisk Technologies Llc Dynamic staggering for programming in nonvolatile memory
CN117577152A (zh) 2020-11-26 2024-02-20 长江存储科技有限责任公司 用于多管芯操作的动态峰值功率管理
US11520497B2 (en) 2020-12-02 2022-12-06 Micron Technology, Inc. Peak power management in a memory device
US11532348B2 (en) * 2020-12-02 2022-12-20 Micron Technology, Inc. Power management across multiple packages of memory dies
KR102913132B1 (ko) * 2021-01-05 2026-01-19 삼성전자주식회사 반도체 장치 및 이를 포함하는 데이터 저장 시스템
US12362022B2 (en) * 2022-08-15 2025-07-15 Micron Technology, Inc. Scheduled interrupts for peak power management token ring communication
US12118219B2 (en) 2022-09-06 2024-10-15 SanDisk Technologies, Inc. Asymmetric time division peak power management (TD-PPM) timing windows
US11893253B1 (en) 2022-09-20 2024-02-06 Western Digital Technologies, Inc. Dynamic TD-PPM state and die mapping in multi-NAND channels
US20240152295A1 (en) * 2022-11-08 2024-05-09 Micron Technology, Inc. Peak power management with dynamic data path operation current budget management

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679133B2 (en) 2007-11-08 2010-03-16 Samsung Electronics Co., Ltd. Vertical-type non-volatile memory devices
US20110233648A1 (en) 2010-03-26 2011-09-29 Samsung Electronics Co., Ltd. Three-Dimensional Semiconductor Memory Devices And Methods Of Fabricating The Same
US8553466B2 (en) 2010-03-04 2013-10-08 Samsung Electronics Co., Ltd. Non-volatile memory device, erasing method thereof, and memory system including the same
US8559235B2 (en) 2010-08-26 2013-10-15 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof and memory system including the same
US8654587B2 (en) 2010-08-11 2014-02-18 Samsung Electronics Co., Ltd. Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
US20170256955A1 (en) 2016-03-02 2017-09-07 Sandisk Technologies Inc. Efficient Peak Current Management In A Multi-Die Stack

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4996277B2 (ja) 2007-02-09 2012-08-08 株式会社東芝 半導体記憶システム
KR101519061B1 (ko) * 2008-01-21 2015-05-11 삼성전자주식회사 하나의 고전압 레벨 쉬프터를 공유하는 로우 디코더를 갖는플래쉬 메모리 장치
WO2010090691A2 (en) 2009-02-09 2010-08-12 Rambus Inc. Multiple plane, non-volatile memory with synchronized control
JP2011065708A (ja) 2009-09-16 2011-03-31 Toshiba Corp 不揮発性半導体記憶装置
US8555095B2 (en) * 2010-07-26 2013-10-08 Apple Inc. Methods and systems for dynamically controlling operations in a non-volatile memory to limit power consumption
JP2012058860A (ja) * 2010-09-06 2012-03-22 Toshiba Corp メモリシステム
DE102012109612A1 (de) * 2011-10-13 2013-04-18 Samsung Electronics Co., Ltd. Nichtflüchtige Speichervorrichtung, Programmierungsverfahren für nichtflüchtige Speichervorrichtungen und Speichersystem, das eine nichtflüchtiger Speichervorrichtung umfasst
US20130290611A1 (en) 2012-03-23 2013-10-31 Violin Memory Inc. Power management in a flash memory
US8848478B2 (en) 2012-09-24 2014-09-30 Micron Technology, Inc. Power consumption control
US9443600B2 (en) * 2013-03-28 2016-09-13 Intel Corporation Auto-suspend and auto-resume operations for a multi-die NAND memory device to reduce peak power consumption
US9368214B2 (en) 2013-10-03 2016-06-14 Apple Inc. Programmable peak-current control in non-volatile memory devices
JP2015135875A (ja) * 2014-01-16 2015-07-27 株式会社東芝 半導体パッケージおよび電子機器
KR102225989B1 (ko) * 2014-03-04 2021-03-10 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
KR102233808B1 (ko) * 2014-03-14 2021-03-30 삼성전자주식회사 저장 장치 및 그것의 테이블 관리 방법
US10013345B2 (en) 2014-09-17 2018-07-03 Sandisk Technologies Llc Storage module and method for scheduling memory operations for peak-power management and balancing
KR102259943B1 (ko) * 2014-12-08 2021-06-04 삼성전자주식회사 멀티 플래인을 포함하는 불 휘발성 메모리 장치
US20160162215A1 (en) 2014-12-08 2016-06-09 Sandisk Technologies Inc. Meta plane operations for a storage device
KR20160074929A (ko) * 2014-12-19 2016-06-29 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 이의 동작 방법
KR102316267B1 (ko) 2015-04-15 2021-10-22 삼성전자주식회사 씨오피 구조를 갖는 메모리 장치, 이를 포함하는 메모리 패키지 및 그 제조 방법
KR102296741B1 (ko) * 2015-07-07 2021-09-01 삼성전자 주식회사 메모리 장치 및 메모리 시스템
US9875049B2 (en) 2015-08-24 2018-01-23 Sandisk Technologies Llc Memory system and method for reducing peak current consumption
KR20170034126A (ko) * 2015-09-18 2017-03-28 에스케이하이닉스 주식회사 고전압 스위치 회로 및 이를 포함하는 반도체 메모리 장치
KR102713411B1 (ko) 2017-01-18 2024-10-08 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679133B2 (en) 2007-11-08 2010-03-16 Samsung Electronics Co., Ltd. Vertical-type non-volatile memory devices
US8553466B2 (en) 2010-03-04 2013-10-08 Samsung Electronics Co., Ltd. Non-volatile memory device, erasing method thereof, and memory system including the same
US20110233648A1 (en) 2010-03-26 2011-09-29 Samsung Electronics Co., Ltd. Three-Dimensional Semiconductor Memory Devices And Methods Of Fabricating The Same
US8654587B2 (en) 2010-08-11 2014-02-18 Samsung Electronics Co., Ltd. Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
US8559235B2 (en) 2010-08-26 2013-10-15 Samsung Electronics Co., Ltd. Nonvolatile memory device, operating method thereof and memory system including the same
US20170256955A1 (en) 2016-03-02 2017-09-07 Sandisk Technologies Inc. Efficient Peak Current Management In A Multi-Die Stack

Also Published As

Publication number Publication date
CN109658967B (zh) 2023-08-29
JP7280027B2 (ja) 2023-05-23
DE102018116927A1 (de) 2019-04-18
KR20190041319A (ko) 2019-04-22
US10712955B2 (en) 2020-07-14
US20190114099A1 (en) 2019-04-18
KR102631350B1 (ko) 2024-01-31
JP2019075105A (ja) 2019-05-16
CN109658967A (zh) 2019-04-19

Similar Documents

Publication Publication Date Title
DE102018116927B4 (de) Nicht-flüchtige Speichervorrichtung einschließlich Speicherebenen und Betriebsverfahren davon
DE112015005325B4 (de) Speicherbusverwaltung
US10102909B2 (en) Nonvolatile memory device
DE112019000164B4 (de) Speichervorrichtung mit verbundenen wortleitungen zur schnellen programmierung
US9941009B2 (en) Memory device having vertical structure and memory system including the same
DE102011086289B4 (de) Speicherbauelement, Speichersystem und Löschverfahren
DE112015003638B4 (de) Speichermodul und -verfahren für optimierte Energienutzung
DE102013107715A1 (de) Nichtflüchtige Speichervorrichtung und Verfahren zum Steuern des Aussetzens einer Befehlsausführung derselben
DE112016003568B4 (de) Intelligente Überprüfung bzw. Verifizierung zur Programmierung nicht-flüchtiger Speicher
DE102021121522B4 (de) Löschverfahren einer nichtflüchtigen Speichervorrichtung und Betriebsverfahren einer Speichereinrichtung
DE112018003426T5 (de) Reduzieren der lesestörung der art durch injektion heisser elektronen in 3d-speichervorrichtung mit verbundenen sourceendauswahlgates
DE102020114755A1 (de) Halbleitervorrichtung
DE102020107244A1 (de) Speichervorrichtung
DE102023101064A1 (de) Halbleiterspeichervorrichtung
US10545880B2 (en) Memory device and memory system performing an unmapped read
DE102023117774A1 (de) Techniken zum schreiben am gleichen ort ohne löschen in einer speichervorrichtung
DE102023118085A1 (de) Techniken zum schreiben am gleichen ort ohne löschen in einer speichervorrichtung
DE102021106910A1 (de) Schleifenabhängiges umschalten zwischen techniken zur programmverifizierung
DE102023117776A1 (de) Speicher-die mit einer einzigartigen speicherkapazität
DE102011090020A1 (de) Nicht-flüchtiges Speicherbauelement mit 3D-Speicherzellenfeld
DE102021107268A1 (de) Programmierung von speicherzellen unter verwendung von kodiertem tlc-fine
DE102020133488A1 (de) Verfahren und vorrichtung zur milderung von lesestörungen von heisselektronen in 3d nand vorrichtungen
DE102022210841A1 (de) Speichervorrichtung und betriebsverfahren der speichervorrichtung
US20250259686A1 (en) Page buffer circuit and memory device including the same
DE112023003547T5 (de) Dynamische latches über einem dreidimensionalen nichtflüchtigen speicher-array

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final