DE102014111106A8 - Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements - Google Patents

Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements Download PDF

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Publication number
DE102014111106A8
DE102014111106A8 DE102014111106.0A DE102014111106A DE102014111106A8 DE 102014111106 A8 DE102014111106 A8 DE 102014111106A8 DE 102014111106 A DE102014111106 A DE 102014111106A DE 102014111106 A8 DE102014111106 A8 DE 102014111106A8
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DE
Germany
Prior art keywords
component
electronic component
producing
arrangement
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102014111106.0A
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English (en)
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DE102014111106A1 (de
Inventor
Luca Haiberger
Matthias Sperl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102014111106.0A priority Critical patent/DE102014111106A1/de
Priority to DE112015003591.5T priority patent/DE112015003591A5/de
Priority to US15/502,188 priority patent/US9876148B2/en
Priority to KR1020177002785A priority patent/KR102379374B1/ko
Priority to CN201580054044.5A priority patent/CN107112385B/zh
Priority to PCT/EP2015/067911 priority patent/WO2016020365A1/de
Publication of DE102014111106A1 publication Critical patent/DE102014111106A1/de
Publication of DE102014111106A8 publication Critical patent/DE102014111106A8/de
Priority to US15/877,270 priority patent/US10580942B2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE102014111106.0A 2014-08-05 2014-08-05 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronisches Bauelements Withdrawn DE102014111106A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102014111106.0A DE102014111106A1 (de) 2014-08-05 2014-08-05 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronisches Bauelements
DE112015003591.5T DE112015003591A5 (de) 2014-08-05 2015-08-04 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements
US15/502,188 US9876148B2 (en) 2014-08-05 2015-08-04 Electronic component, optoelectronic component, component arrangement, and method for producing an electronic component
KR1020177002785A KR102379374B1 (ko) 2014-08-05 2015-08-04 전자 구성요소, 광전자 구성요소, 구성요소 배열체, 및 전자 구성요소 생산 방법
CN201580054044.5A CN107112385B (zh) 2014-08-05 2015-08-04 电子器件、光电子器件、器件装置和用于制造电子器件的方法
PCT/EP2015/067911 WO2016020365A1 (de) 2014-08-05 2015-08-04 Elektronisches bauelement, optoelektronisches bauelement, bauelementeanordnung und verfahren zur herstellung eines elektronischen bauelements
US15/877,270 US10580942B2 (en) 2014-08-05 2018-01-22 Electronic component, optoelectronic component, component arrangement, and method for producing an electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014111106.0A DE102014111106A1 (de) 2014-08-05 2014-08-05 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronisches Bauelements

Publications (2)

Publication Number Publication Date
DE102014111106A1 DE102014111106A1 (de) 2016-02-11
DE102014111106A8 true DE102014111106A8 (de) 2016-05-04

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DE102014111106.0A Withdrawn DE102014111106A1 (de) 2014-08-05 2014-08-05 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronisches Bauelements
DE112015003591.5T Pending DE112015003591A5 (de) 2014-08-05 2015-08-04 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112015003591.5T Pending DE112015003591A5 (de) 2014-08-05 2015-08-04 Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements

Country Status (5)

Country Link
US (2) US9876148B2 (de)
KR (1) KR102379374B1 (de)
CN (1) CN107112385B (de)
DE (2) DE102014111106A1 (de)
WO (1) WO2016020365A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015122641A1 (de) * 2015-12-22 2017-06-22 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
US9576931B1 (en) * 2016-02-19 2017-02-21 Inotera Memories, Inc. Method for fabricating wafer level package
DE102017127597B4 (de) * 2017-11-22 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
US11145797B1 (en) * 2018-05-08 2021-10-12 Facebook Technologies, Llc Forming conformable layer with flap on semiconductor devices
EP3591345B1 (de) * 2018-07-02 2020-11-11 Dr. Johannes Heidenhain GmbH Verfahren zur herstellung einer lichtquelle für eine sensoreinheit einer positionsmesseinrichtung sowie eine positionsmesseinrichtung
DE102018124121A1 (de) * 2018-09-28 2020-04-02 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung und Verbindungselement
CN111341750B (zh) * 2018-12-19 2024-03-01 奥特斯奥地利科技与系统技术有限公司 包括有导电基部结构的部件承载件及制造方法
DE102022133000A1 (de) * 2022-12-12 2024-06-13 Ams-Osram International Gmbh Verfahren zum herstellen elektronischer bauelemente

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DE202005009086U1 (de) * 2005-06-10 2005-11-10 Hsieh, Chin-Mu, Yungkang LED-Schirm
DE102008039388A1 (de) * 2007-09-21 2009-04-16 Infineon Technologies Ag Gestapelte Halbleiterchips
JP2012243462A (ja) * 2011-05-17 2012-12-10 Jst Mfg Co Ltd Ｌｅｄ基板用電気的接続装置
WO2013118002A1 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Molded lens forming a chip scale led package and method of manufacturing the same
DE102012102420A1 (de) * 2012-03-21 2013-09-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines solchen

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Publication number Priority date Publication date Assignee Title
DE10239866B3 (de) * 2002-08-29 2004-04-08 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements
DE202005009086U1 (de) * 2005-06-10 2005-11-10 Hsieh, Chin-Mu, Yungkang LED-Schirm
DE102008039388A1 (de) * 2007-09-21 2009-04-16 Infineon Technologies Ag Gestapelte Halbleiterchips
JP2012243462A (ja) * 2011-05-17 2012-12-10 Jst Mfg Co Ltd Ｌｅｄ基板用電気的接続装置
WO2013118002A1 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Molded lens forming a chip scale led package and method of manufacturing the same
DE102012102420A1 (de) * 2012-03-21 2013-09-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines solchen

Also Published As

Publication number Publication date
CN107112385B (zh) 2020-09-11
US9876148B2 (en) 2018-01-23
US20170222094A1 (en) 2017-08-03
US20180145230A1 (en) 2018-05-24
CN107112385A (zh) 2017-08-29
WO2016020365A1 (de) 2016-02-11
DE112015003591A5 (de) 2017-04-20
KR102379374B1 (ko) 2022-03-28
US10580942B2 (en) 2020-03-03
DE102014111106A1 (de) 2016-02-11
KR20170041711A (ko) 2017-04-17

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