DE102012112989A1 - Verfahren zum Aufbringen einer Temporärbondschicht - Google Patents

Verfahren zum Aufbringen einer Temporärbondschicht Download PDF

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Publication number
DE102012112989A1
DE102012112989A1 DE102012112989.4A DE102012112989A DE102012112989A1 DE 102012112989 A1 DE102012112989 A1 DE 102012112989A1 DE 102012112989 A DE102012112989 A DE 102012112989A DE 102012112989 A1 DE102012112989 A1 DE 102012112989A1
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DE
Germany
Prior art keywords
temporary
bonding
boundary layer
layer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102012112989.4A
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German (de)
English (en)
Inventor
Jürgen Burggraf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EV Group E Thallner GmbH
Original Assignee
EV Group E Thallner GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EV Group E Thallner GmbH filed Critical EV Group E Thallner GmbH
Priority to DE102012112989.4A priority Critical patent/DE102012112989A1/de
Priority to ATA9019/2013A priority patent/AT516064B1/de
Priority to SG2014013056A priority patent/SG2014013056A/en
Priority to KR1020147027831A priority patent/KR20150097381A/ko
Priority to PCT/EP2013/076629 priority patent/WO2014095668A1/de
Priority to US14/388,107 priority patent/US20150047784A1/en
Priority to JP2015548392A priority patent/JP2016503961A/ja
Priority to CN201380018729.5A priority patent/CN104380457A/zh
Publication of DE102012112989A1 publication Critical patent/DE102012112989A1/de
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Peptides Or Proteins (AREA)
  • Weting (AREA)
DE102012112989.4A 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht Ceased DE102012112989A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102012112989.4A DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht
ATA9019/2013A AT516064B1 (de) 2012-12-21 2013-12-16 Verfahren zum Aufbringen einer Temporärbondschicht
SG2014013056A SG2014013056A (en) 2012-12-21 2013-12-16 Method for applying a temporary bond layer
KR1020147027831A KR20150097381A (ko) 2012-12-21 2013-12-16 임시 접합 레이어 도포 방법
PCT/EP2013/076629 WO2014095668A1 (de) 2012-12-21 2013-12-16 Verfahren zum aufbringen einer temporärbondschicht
US14/388,107 US20150047784A1 (en) 2012-12-21 2013-12-16 Method for applying a temporary bonding layer
JP2015548392A JP2016503961A (ja) 2012-12-21 2013-12-16 仮貼り合わせ層の被着方法
CN201380018729.5A CN104380457A (zh) 2012-12-21 2013-12-16 施加临时粘合层的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012112989.4A DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht

Publications (1)

Publication Number Publication Date
DE102012112989A1 true DE102012112989A1 (de) 2014-06-26

Family

ID=49883069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012112989.4A Ceased DE102012112989A1 (de) 2012-12-21 2012-12-21 Verfahren zum Aufbringen einer Temporärbondschicht

Country Status (8)

Country Link
US (1) US20150047784A1 (https=)
JP (1) JP2016503961A (https=)
KR (1) KR20150097381A (https=)
CN (1) CN104380457A (https=)
AT (1) AT516064B1 (https=)
DE (1) DE102012112989A1 (https=)
SG (1) SG2014013056A (https=)
WO (1) WO2014095668A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023000322A1 (de) 2022-10-05 2024-04-11 Luce Patent Gmbh Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP2017163009A (ja) * 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
US10676350B2 (en) 2018-09-21 2020-06-09 ColdQuanta, Inc. Reversible anodic bonding
US12582001B2 (en) * 2022-08-19 2026-03-17 Micron Technology, Inc. Methods for fusion bonding semiconductor devices to temporary carrier wafers with cavity regions for reduced bond strength, and semiconductor device assemblies formed by the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19654791A1 (de) * 1996-03-18 1997-09-25 Mitsubishi Electric Corp Verfahren zur Herstellung einer Halbleitervorrichtung
US5856229A (en) * 1994-03-10 1999-01-05 Canon Kabushiki Kaisha Process for production of semiconductor substrate
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US20020068021A1 (en) * 2000-12-05 2002-06-06 Staehler Cord F. Method for producing a fluid device, fluid device and analysis apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715503B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
JP4439602B2 (ja) * 1997-09-29 2010-03-24 株式会社東芝 半導体装置の製造方法
US6853129B1 (en) * 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4457642B2 (ja) * 2003-11-10 2010-04-28 ソニー株式会社 半導体装置、およびその製造方法
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
EP1605502A1 (en) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfer method for the manufacturing of electronic devices
FR2893750B1 (fr) * 2005-11-22 2008-03-14 Commissariat Energie Atomique Procede de fabrication d'un dispositif electronique flexible du type ecran comportant une pluralite de composants en couches minces.
JP2007322575A (ja) * 2006-05-31 2007-12-13 Hitachi Displays Ltd 表示装置
US9299594B2 (en) * 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856229A (en) * 1994-03-10 1999-01-05 Canon Kabushiki Kaisha Process for production of semiconductor substrate
DE19654791A1 (de) * 1996-03-18 1997-09-25 Mitsubishi Electric Corp Verfahren zur Herstellung einer Halbleitervorrichtung
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US20020068021A1 (en) * 2000-12-05 2002-06-06 Staehler Cord F. Method for producing a fluid device, fluid device and analysis apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023000322A1 (de) 2022-10-05 2024-04-11 Luce Patent Gmbh Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen
EP4410946A2 (de) 2022-10-05 2024-08-07 LUCE Patent GmbH Verfahren zur stofflichen und energetischen verwertung von fermentationsrückständen aus der methanfermentation von energiepflanzen

Also Published As

Publication number Publication date
SG2014013056A (en) 2014-10-30
JP2016503961A (ja) 2016-02-08
KR20150097381A (ko) 2015-08-26
AT516064B1 (de) 2016-02-15
CN104380457A (zh) 2015-02-25
AT516064A5 (de) 2016-02-15
WO2014095668A1 (de) 2014-06-26
US20150047784A1 (en) 2015-02-19

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