DE102012101717A1 - Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung - Google Patents

Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung Download PDF

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Publication number
DE102012101717A1
DE102012101717A1 DE102012101717A DE102012101717A DE102012101717A1 DE 102012101717 A1 DE102012101717 A1 DE 102012101717A1 DE 102012101717 A DE102012101717 A DE 102012101717A DE 102012101717 A DE102012101717 A DE 102012101717A DE 102012101717 A1 DE102012101717 A1 DE 102012101717A1
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Germany
Prior art keywords
susceptor
process chamber
temperature
substrate
measured values
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Withdrawn
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DE102012101717A
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German (de)
English (en)
Inventor
Ralf Leiers
Markus Lünenbürger
Gerd Strauch
Bernd Schineller
Karl-Heinz Büchel
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Aixtron SE
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Aixtron SE
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Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE102012101717A priority Critical patent/DE102012101717A1/de
Priority to PCT/EP2013/053986 priority patent/WO2013127891A1/de
Priority to DE112013001238.3T priority patent/DE112013001238A5/de
Priority to CN201380012023.8A priority patent/CN104204291B/zh
Priority to TW102107233A priority patent/TWI571528B/zh
Publication of DE102012101717A1 publication Critical patent/DE102012101717A1/de
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Automation & Control Theory (AREA)
  • Remote Sensing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
DE102012101717A 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung Withdrawn DE102012101717A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102012101717A DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
PCT/EP2013/053986 WO2013127891A1 (de) 2012-03-01 2013-02-28 Verfahren und vorrichtung zur regelung der oberflächentemperatur eines suszeptors einer substratbeschichtungseinrichtung
DE112013001238.3T DE112013001238A5 (de) 2012-03-01 2013-02-28 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
CN201380012023.8A CN104204291B (zh) 2012-03-01 2013-02-28 用于控制基板涂布装置的基座表面温度的方法及装置
TW102107233A TWI571528B (zh) 2012-03-01 2013-03-01 And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012101717A DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung

Publications (1)

Publication Number Publication Date
DE102012101717A1 true DE102012101717A1 (de) 2013-09-05

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102012101717A Withdrawn DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
DE112013001238.3T Pending DE112013001238A5 (de) 2012-03-01 2013-02-28 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112013001238.3T Pending DE112013001238A5 (de) 2012-03-01 2013-02-28 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung

Country Status (4)

Country Link
CN (1) CN104204291B (zh)
DE (2) DE102012101717A1 (zh)
TW (1) TWI571528B (zh)
WO (1) WO2013127891A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
DE102013114412A1 (de) 2013-12-18 2015-06-18 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
WO2016083373A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum kalibrieren einer pyrometeranordnung eines cvd- oder pvd-reaktors
DE102015100640A1 (de) * 2015-01-19 2016-07-21 Aixtron Se Vorrichtung und Verfahren zum thermischen Behandeln von Substraten
WO2018166955A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Verfahren und vorrichtung zur thermischen behandlung eines substrates
CN112969815A (zh) * 2018-09-07 2021-06-15 艾克斯特朗欧洲公司 用于调节cvd反应器的顶部温度的方法
CN113846376A (zh) * 2021-09-23 2021-12-28 浙江晶盛机电股份有限公司 外延生长装置的调温方法以及外延生长装置
WO2023198804A1 (de) 2022-04-14 2023-10-19 Hte Gmbh The High Throughput Experimentation Company Vorrichtung zur wärmebehandlung

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
CN104635792B (zh) * 2015-01-09 2017-10-27 中国科学院工程热物理研究所 基于主动温度梯度法控制表面张力驱动对流的方法
CN105390421A (zh) * 2015-10-14 2016-03-09 上海华力微电子有限公司 一种反应室温度分区控制系统
KR102467605B1 (ko) * 2017-06-28 2022-11-16 도쿄엘렉트론가부시키가이샤 열처리 장치, 열처리 장치의 관리 방법 및 기억 매체
JP7003759B2 (ja) * 2017-06-28 2022-01-21 東京エレクトロン株式会社 熱処理装置、熱処理装置の管理方法及び記憶媒体
US11408734B2 (en) 2019-01-03 2022-08-09 Lam Research Corporation Distance measurement between gas distribution device and substrate support at high temperatures
DE102019107295A1 (de) * 2019-03-21 2020-09-24 Aixtron Se Verfahren zur Erfassung eines Zustandes eines CVD-Reaktors unter Produktionsbedingungen
DE102020100481A1 (de) * 2020-01-10 2021-07-15 Aixtron Se CVD-Reaktor und Verfahren zur Regelung der Oberflächentemperatur der Substrate
CN113862647A (zh) * 2021-09-28 2021-12-31 长江存储科技有限责任公司 一种薄膜沉积设备及方法

Citations (12)

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US5782974A (en) * 1994-02-02 1998-07-21 Applied Materials, Inc. Method of depositing a thin film using an optical pyrometer
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6034357A (en) * 1998-06-08 2000-03-07 Steag Rtp Systems Inc Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
US20030038112A1 (en) * 2000-03-30 2003-02-27 Lianjun Liu Optical monitoring and control system and method for plasma reactors
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
DE102004007984A1 (de) 2004-02-18 2005-09-01 Aixtron Ag CVD-Reaktor mit Fotodioden-Array
US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
EP1481117B1 (de) 2002-02-22 2007-10-24 Aixtron AG Verfahren und vorrichtung zum abscheiden von halbleiterschichten
DE102007023970A1 (de) 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate

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US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
JP2006113724A (ja) * 2004-10-13 2006-04-27 Omron Corp 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5782974A (en) * 1994-02-02 1998-07-21 Applied Materials, Inc. Method of depositing a thin film using an optical pyrometer
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6034357A (en) * 1998-06-08 2000-03-07 Steag Rtp Systems Inc Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US20030038112A1 (en) * 2000-03-30 2003-02-27 Lianjun Liu Optical monitoring and control system and method for plasma reactors
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
EP1481117B1 (de) 2002-02-22 2007-10-24 Aixtron AG Verfahren und vorrichtung zum abscheiden von halbleiterschichten
DE102004007984A1 (de) 2004-02-18 2005-09-01 Aixtron Ag CVD-Reaktor mit Fotodioden-Array
US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
DE102007023970A1 (de) 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
US10438823B2 (en) 2013-08-23 2019-10-08 Aixtron Se Substrate treatment device
CN105934659B (zh) * 2013-12-18 2019-03-08 艾克斯特朗欧洲公司 使用两个温度传感装置调整cvd反应器过程室内温度的设备和方法
DE102013114412A1 (de) 2013-12-18 2015-06-18 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
WO2015091371A1 (de) 2013-12-18 2015-06-25 Aixtron Se Vorrichtung und verfahren zur regelung der temperatur in einer prozesskammer eines cvd-reaktors unter verwendung zweier temperatursensoreinrichtungen
CN105934659A (zh) * 2013-12-18 2016-09-07 艾克斯特朗欧洲公司 使用两个温度传感装置调整cvd反应器过程室内温度的设备和方法
WO2016083373A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum kalibrieren einer pyrometeranordnung eines cvd- oder pvd-reaktors
DE102014117388A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors
DE102015100640A1 (de) * 2015-01-19 2016-07-21 Aixtron Se Vorrichtung und Verfahren zum thermischen Behandeln von Substraten
WO2016116373A1 (de) * 2015-01-19 2016-07-28 Aixtron Se Vorrichtung und verfahren zum thermischen behandeln von substraten
WO2018166955A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Verfahren und vorrichtung zur thermischen behandlung eines substrates
DE102017105333A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Verfahren und Vorrichtung zur thermischen Behandlung eines Substrates
CN112969815A (zh) * 2018-09-07 2021-06-15 艾克斯特朗欧洲公司 用于调节cvd反应器的顶部温度的方法
CN112969815B (zh) * 2018-09-07 2024-04-30 艾克斯特朗欧洲公司 用于调节cvd反应器的顶部温度的方法
CN113846376A (zh) * 2021-09-23 2021-12-28 浙江晶盛机电股份有限公司 外延生长装置的调温方法以及外延生长装置
CN113846376B (zh) * 2021-09-23 2022-12-27 浙江晶盛机电股份有限公司 外延生长装置的调温方法以及外延生长装置
WO2023198804A1 (de) 2022-04-14 2023-10-19 Hte Gmbh The High Throughput Experimentation Company Vorrichtung zur wärmebehandlung

Also Published As

Publication number Publication date
TWI571528B (zh) 2017-02-21
CN104204291B (zh) 2017-12-05
TW201346061A (zh) 2013-11-16
CN104204291A (zh) 2014-12-10
WO2013127891A1 (de) 2013-09-06
DE112013001238A5 (de) 2015-01-15

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Effective date: 20140729